Complementary Silicon Power
Transistors
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
Low CollectorEmitter Saturation Voltage
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
MAXIMUM RATINGS
D44H or D45H
Rating
Symbol
8
10, 11
Unit
CollectorEmitter Voltage
V
CEO
60
80
Vdc
Emitter Base Voltage
V
EB
5.0
Vdc
Collector Current -- Continuous
-- Peak (1)
I
C
10
20
Adc
Total Power Dissipation
@ T
C
= 25
_
C
@ T
A
= 25
_
C
P
D
50
1.67
Watts
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.5
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
75
_
C/W
Maximum Lead Temperature for Soldering Purposes: 1/8
from Case for 5 Seconds
T
L
275
_
C
(1) Pulse Width
v
6.0 ms, Duty Cycle
v
50%.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
(V
CE
= 1.0 Vdc, I
C
= 2.0 Adc)
D44H10
D45H10
h
FE
35
--
--
D44H8,11
D44H8,11
60
--
(V
CE
= 1.0 Vdc, I
C
= 4.0 Adc)
D44H10
D45H10
20
--
D44H8,11
D45H8,11
40
--
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
January, 2001 Rev. 1
1
Publication Order Number:
D44H/D
D44H Series
D45H Series
10 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
*ON Semiconductor Preferred Device
*
NPN
*
PNP
CASE 221A06
TO220AB
D44H Series D45H Series
http://onsemi.com
4
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D44H/D
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