Semiconductor Components Industries, LLC, 2000
May, 2000 Rev. 0
1
Publication Order Number:
DTA114E/D
DTA114E SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a baseemitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the TO92
package which is designed for through hole applications.
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
Total Power Dissipation
@ T
A
= 25
C
(1.)
Derate above 25
C
P
D
350
2.81
mW
mW/
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to
Ambient (surface mounted)
R
JA
357
C/W
Operating and Storage
Temperature Range
T
J
, T
stg
55 to
+150
C
Maximum Temperature for
Soldering Purposes,
Time in Solder Bath
T
L
260
10
C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
10
22
47
47
1.0
2.2
4.7
47
5000/Box
1. Device mounted on a FR4 glass epoxy printed circuit board using the
minimum recommended footprint.
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CASE 29
TO92 (TO226)
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTOR
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
DTA114E SERIES
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
--
--
100
nAdc
CollectorEmitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
--
--
500
nAdc
EmitterBase Cutoff Current
DTA114E
(V
EB
= 6.0 V, I
C
= 0)
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
I
EBO
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
mAdc
CollectorBase Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
--
--
Vdc
CollectorEmitter Breakdown Voltage
(2.)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
--
--
Vdc
ON CHARACTERISTICS
(2.)
DC Current Gain
DTA114E
(V
CE
= 10 V, I
C
= 5.0 mA)
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
60
100
140
140
250
250
5.0
15
27
140
--
--
--
--
--
--
--
--
--
--
CollectorEmitter Saturation Voltage
(I
C
= 10 mA, I
E
= 0.3 mA) DTA144E/DTA114Y
(I
C
= 10 mA, I
E
= 0.3 mA)
DTB113E/DTA143E
(I
C
= 10 mA, I
B
= 5 mA) DTA123E
(I
C
= 10 mA, I
B
= 1 mA) DTA114T/DTA143T/
(I
C
= 10 mA, I
B
= 1 mA)
DTA143Z/DTA124E
V
CE(sat)
--
--
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
DTA114E
DTA124E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
DTA144E
V
OL
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
DTA114E SERIES
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
DTA114T
DTA113T
DTA144E
DTA114Y
DTA143Z
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 k
)
DTB113E
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
DTA114T
DTA143T
DTA123E
DTA143E
V
OH
4.9
--
--
Vdc
Input Resistor
DTA114E
DTA124E
DTA144E
DTA114Y
DTA114T
DTA143T
DTB113E
DTA123E
DTA143E
DTA143Z
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
k
Resistor Ratio
DTA114E/DTA124E/DTA144E
DTA114Y
DTA114T/DTA143T
DTB113E/DTA123E/DTA143E
DTA143Z
R
1
/R
2
0.8
0.17
--
0.8
0.055
1.0
0.21
--
1.0
0.1
1.2
0.25
--
1.2
0.185
DTA114E SERIES
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4
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114E
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
I C
, COLLECT
OR
CURRENT
(mA)
T
A
= 25
C
25
C
1
2
3
4
5
6
7
8
9
10
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
0.1
1
0
40
60
80
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED)
T
A
= 75
C
25
C
100
10
75
C
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
0
T
A
= 25
C
25
C
75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
I
C
/I
B
= 10
V
CE
= 10 V
0
I
C
, COLLECTOR CURRENT (mA)
0.1
V
in
, INPUT
VOL
T
AGE (VOL
TS)
1
10
100
10
20
30
40
50
T
A
= 25
C
25
C
75
C
V
O
= 0.2 V
Figure 1. Derating Curve
250
200
150
100
50
0
50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION
(MILLIW
A
TTS)
R
JA
= 625
C/W
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
25
C
DTA114E SERIES
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5
TYPICAL ELECTRICAL CHARACTERISTICS
DTA124E
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN (NORMALIZED) 100
10
1
100
T
A
= 75
C
25
C
25
C
Figure 9. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
T
A
= 25
C
75
C
V
in
, INPUT
VOL
T
AGE (VOL
TS)
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
75
C
25
C
T
A
= 25
C
I C
, COLLECT
OR
CURRENT
(mA)
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
V
CE(sat)
,
MA
X
IM
U
M
COLLECT
OR
VOL
T
A
G
E
(
VOL
TS)
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0
20
60
80
75
C
25
C
T
A
= 25
C
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
,
CA
P
ACIT
A
N
CE
(p
F)
25
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
DTA114E SERIES
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6
TYPICAL ELECTRICAL CHARACTERISTICS
DTA144E
Figure 12. V
CE(sat)
versus I
C
100
10
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
V
in
, INPUT
VOL
T
AGE (VOL
TS)
T
A
= 25
C
25
C
75
C
50
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0.01
0.001
0
10
I C
, COLLECT
OR
CURRENT
(mA)
25
C
V
in
, INPUT VOLTAGE (VOLTS)
25
C
Figure 15. Output Current versus Input Voltage
h
FE
, CURRENT
GAIN (NORMALIZED)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
25
C
25
C
Figure 16. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
C
25
C
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAP
ACIT
ANCE
(pF)
1
2
3
4
5
6
7
8
9
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 2 V
I
C
/I
B
= 10
T
A
= 75
C
T
A
= 75
C
T
A
= 25
C
DTA114E SERIES
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7
TYPICAL ELECTRICAL CHARACTERISTICS
DTA114Y
35
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
40
45
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR
CURRENT
(mA)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V
CE(sat)
, MAXIMUM COLLECT
OR
VOL
T
AGE (VOL
TS)
Figure 18. DC Current Gain
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
C
ob
, CAP
ACIT
ANCE
(pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
T
A
= 25
C
75
C
25
C
T
A
= 75
C
25
C
25
C
V
O
= 5 V
V
O
= 0.2 V
T
A
= 25
C
25
C
75
C
I
C
/I
B
= 10
h
FE
, DC CURRENT
GAIN (NORMALIZED)
1
10
100
I
C
, COLLECTOR CURRENT (mA)
25
C
25
C
T
A
= 75
C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
15
20 40 50
60 70
80
90
DTA114E SERIES
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8
PACKAGE DIMENSIONS
TO92
(TO226)
CASE 2911
ISSUE AL
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 6:
PIN 1. GATE
2. SOURCE & SUBSTRATE
3. DRAIN
STYLE 11:
PIN 1. ANODE
2. CATHODE & ANODE
3. CATHODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STYLE 2:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 8:
PIN 1. DRAIN
2. GATE
3. SOURCE & SUBSTRATE
STYLE 13:
PIN 1. ANODE 1
2. GATE
3. CATHODE 2
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 9:
PIN 1. BASE 1
2. EMITTER
3. BASE 2
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 10:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 15:
PIN 1. ANODE 1
2. CATHODE
3. ANODE 2
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.115
2.93
V
0.135
3.43
1
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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