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Электронный компонент: J110RLRA

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Semiconductor Components Industries, LLC, 2001
September, 2001 Rev. 3
1
Publication Order Number:
2N5638/D
J110
JFET - General Purpose
NChannel Depletion
NChannel Junction Field Effect Transistors, depletion mode (Type
A) designed for general purpose audio amplifiers, analog switches and
choppers.
NChannel for Higher Gain
Drain and Source Interchangeable
High AC Input Impedance
High DC Input Resistance
Low RDS(on) < 18
Fast Switching td(on) + tr = 8.0 ns (Typ)
Low Noise en = 6.0 nV/
Hz @ 10 Hz (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
GateSource Voltage
VGS
25
Vdc
DrainGate Voltage
VDG
25
Vdc
Gate Current
IG
10
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
310
2.82
mW
mW/
C
Operating Junction Temp Range
TJ
135
C
Storage Temperature Range
Tstg
65 to +150
C
Device
Package
Shipping
ORDERING INFORMATION
J110
TO92
TO92
CASE 29
STYLE 5
5000 Units/Box
3
2
1
Preferred devices are recommended choices for future use
and best overall value.
J110RLRA
TO92
2000/Tape & Reel
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
J110
YWW
http://onsemi.com
1 DRAIN
2 SOURCE
3
GATE
J110
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
STATIC CHARACTERISTICS
GateSource Breakdown Voltage
(IG = 1.0
Adc)
V(BR)GSS
25
Vdc
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
(VGS = 15 Vdc, VDS = 0, TA = 100
C)
IGSS

3
.0
200
nAdc
GateSource Cutoff Voltage
(VDS = 5.0 Vdc, ID = 1.0
Adc)
VGS(off)
0.5
4.0
Vdc
Drain Source OnResistance
(VDS = < 1.0 V, VGS = 0 V)
RDS(on)
10
mAdc
ZeroGateVoltage Drain Current (Note 1.)
(VDS = 15 Vdc)
IDSS
10
mAdc
DYNAMIC CHARACTERISTICS
DrainGate and SourceGate OnCapacitance
(VDS = VGS = 0, f = 1.0 MHz)
Cdg(on)
+
Csg(on)
85
pF
DrainGate OffCapacitance
(VGS = 10 Vdc, f = 1.0 MHz)
Cdg(off)
15
pF
SourceGate OffCapacitance
(VGS = 10 Vdc, f = 1.0 MHz)
Csg(off)
15
pF
1. Pulse Width = 300
s, Duty Cycle = 3.0%.
0
20
40
4
VGS, GATESOURCE VOLTAGE (VOLTS)
C
iss
, INPUT CAP
ACIT
ANCE (pF)
0
VGS, GATESOURCE VOLTAGE (VOLTS)
Figure 1. Common Source Input Capacitance
versus GateSource Voltage
Figure 2. Common Source Reverse Feedback
Capacitance versus GateSource Voltage
C
rss
, FEEDBACK CAP
ACIT
ANCE (pF)
100
0
20
8
20
VDS = 0 V
60
VDS = 0 V
0
100
40
12
12
16
4
8
16
80
80
20
60
5 V
10 V
5 V
10 V
0
8
8
2
1
VGS(off), GATESOURCE CUTOFF VOLTAGE (VOLTS)
R
DS(on)
, DRAINSOURCE
ONRESIST
ANCE (OHMS)
0
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 3. OnResistance versus GateSource
Cutoff Voltage
Figure 4. Output Characteristic
VGS(off) = 2 V
I D
, DRAIN CURRENT (mA)
2
8
20
3
4
12
VGS = 0 V
16
0
100
40
12
4
5
6
7
4
6
10
14
16
18
80
20
60
VGS(off): VDS = 5 V
VGS(off):
ID = 1.0
m
A
RDS(on): VDS
0.1 V
RDS(on):
VGS = 0 V
0
90
30
70
10
50
0.25 V
0.5 V
0.75 V
1.25 V
1 V
J110
http://onsemi.com
3
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristic
VGS(off) = 3 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
200
80
12
4
6
10
14
16
18
160
40
120
0
180
60
140
20
100
0.5 V
1 V
1.5 V
2.5 V
2 V
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 6. Output Characteristic
VGS(off) = 4 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
300
120
12
4
6
10
14
16
18
240
60
180
0
270
90
210
30
150
1 V
2 V
0.5 V
3 V
2.5 V
VDS, DRAINSOURCE VOLTAGE (VOLTS)
Figure 7. Output Characteristic
VGS(off) = 5 V
I D
, DRAIN CURRENT (mA)
2
8
20
VGS = 0 V
0
400
160
12
4
6
10
14
16
18
320
80
240
0
360
120
280
40
200
0.5 V
1 V
1.5 V
1.5 V
2 V
2.5 V
3 V
3.5 V
PACKAGE DIMENSIONS
J110
http://onsemi.com
4
CASE 2911
ISSUE AL
TO92 (TO226)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
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JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
J110/D
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