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Электронный компонент: J310ZL1

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JFET VHF/UHF Amplifiers
NChannel -- Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DS
25
Vdc
GateSource Voltage
V
GS
25
Vdc
Forward Gate Current
I
GF
10
mAdc
Total Device Dissipation @ T
A
= 25
C
Derate above 25
C
P
D
350
2.8
mW
mW/
C
Junction Temperature Range
T
J
65 to +125
C
Storage Temperature Range
T
stg
65 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
GateSource Breakdown Voltage
(I
G
= 1.0
Adc, V
DS
= 0)
V
(BR)GSS
25
--
--
Vdc
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 25
C)
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= +125
C)
I
GSS
--
--
--
--
1.0
1.0
nAdc
Adc
Gate Source Cutoff Voltage
(V
DS
= 10 Vdc, I
D
= 1.0 nAdc)
J308
J309
J310
V
GS(off)
1.0
1.0
2.0
--
--
--
6.5
4.0
6.5
Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current
(1)
(V
DS
= 10 Vdc, V
GS
= 0)
J308
J309
J310
I
DSS
12
12
24
--
--
--
60
30
60
mAdc
GateSource Forward Voltage
(V
DS
= 0, I
G
= 1.0 mAdc)
V
GS(f)
--
--
1.0
Vdc
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 1
1
Publication Order Number:
J308/D
J308
J309
J310
ON Semiconductor Preferred Devices
CASE 2911, STYLE 5
TO92 (TO226AA)
1
2
3
1 DRAIN
2 SOURCE
3
GATE
J308 J309 J310
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2
Characteristic
Symbol
Min
Typ
Max
Unit
SMALLSIGNAL CHARACTERISTICS
CommonSource Input Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
J308
J309
J310
Re(y
is
)
--
--
--
0.7
0.7
0.5
--
--
--
mmhos
CommonSource Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
os
)
--
0.25
--
mmhos
CommonGate Power Gain
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
G
pg
--
16
--
dB
1. Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
3.0%.
SMALLSIGNAL CHARACTERISTICS (continued)
CommonSource Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
fs
)
--
12
--
mmhos
CommonGate Input Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 MHz)
Re(y
ig
)
--
12
--
mmhos
CommonSource Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
J308
J309
J310
g
fs
8000
10000
8000
--
--
--
20000
20000
18000
mhos
CommonSource Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
g
os
--
--
250
mhos
CommonGate Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
J308
J309
J310
g
fg
--
--
--
13000
13000
12000
--
--
--
mhos
CommonGate Output Conductance
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 1.0 kHz)
J308
J309
J310
g
og
--
--
--
150
100
150
--
--
--
mhos
GateDrain Capacitance
(V
DS
= 0, V
GS
= 10 Vdc, f = 1.0 MHz)
C
gd
--
1.8
2.5
pF
GateSource Capacitance
(V
DS
= 0, V
GS
= 10 Vdc, f = 1.0 MHz)
C
gs
--
4.3
5.0
pF
FUNCTIONAL CHARACTERISTICS
Noise Figure
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 450 MHz)
NF
--
1.5
--
dB
Equivalent ShortCircuit Input Noise Voltage
(V
DS
= 10 Vdc, I
D
= 10 mAdc, f = 100 Hz)
e
n
--
10
--
nV
Hz
J308 J309 J310
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3
C1 = C2 = 0.8 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539002D.
C5 = C6 = 5000 pF Erie (2443000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33
H Miller #923030.
L1 = One Turn #16 Cu, 1/4
I.D. (Air Core).
L2
P
= One Turn #16 Cu, 1/4
I.D. (Air Core).
L2
S
= One Turn #16 Cu, 1/4
I.D. (Air Core).
50
SOURCE
50
LOAD
U310
C3
C2
C6
C7
C4
1.0 k
RFC
L1
L2
P
L2
S
+V
DD
C1
C5
Figure 1. 450 MHz CommonGate Amplifier Test Circuit
70
60
50
40
30
20
, SA
TURA
TION DRAIN CURRENT
(mA)
-5.0
-4.0
-3.0
-2.0
-1.0
0
I
D
- V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
I DSS
10
0
70
60
50
40
30
20
10
, DRAIN CURRENT
(mA)
I D
I
DSS
- V
GS
, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
Figure 2. Drain Current and Transfer
Characteristics versus GateSource Voltage
V
DS
= 10 V
I
DSS
+25
C
T
A
= -55
C
+25
C
+25
C
-55
C
+150
C
+150
C
V
GS
, GATE-SOURCE VOLTAGE (VOLTS)
5.0
4.0
3.0
2.0
1.0
0
35
30
25
20
15
10
5.0
0
, FOR
W
ARD
TRANSCONDUCT
ANCE (mmhos)
Y fs
Figure 3. Forward Transconductance
versus GateSource Voltage
V
DS
= 10 V
f = 1.0 MHz
T
A
= -55
C
+25
C
+150
C
+25
C
-55
C
+150
C
I
D
, DRAIN CURRENT (mA)
100 k
10 k
1.0 k
100
1.0 k
100
10
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
, FOR
W
ARD
TRANSCONDUCT
ANCE ( mhos)
Y fs
, OUTPUT

ADMITT
ANCE ( mhos)
Y os
V
GS(off)
= -2.3 V =
V
GS(off)
= -5.7 V =
Figure 4. CommonSource Output
Admittance and Forward Transconductance
versus Drain Current
Y
fs
Y
fs
Y
os
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
5.0
4.0 3.0
2.0
1.0
0
6.0
7.0
8.0
9.0
10
CAP
ACIT
ANCE (pF)
10
7.0
4.0
1.0
0
120
96
72
48
24
0
, ON RESIST
ANCE (OHMS)
R
DS
R
DS
C
gs
C
gd
Figure 5. On Resistance and Junction
Capacitance versus GateSource Voltage
J308 J309 J310
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4
|Y
11
|, |Y
21
|, |Y
22
| (mmhos)
Y 12
(mmhos)
30
24
18
12
6.0
0
1000
100
200
300
500 700
f, FREQUENCY (MHz)
3.0
2.4
1.8
1.2
0.6
|S
21
|, |S
11
|
0.45
0.39
0.33
0.27
0.21
0.15
0.85
0.79
0.73
0.67
0.61
0.55
|S
12
|, |S
22
|
0.060
0.048
0.036
0.024
0.012
1.00
0.98
0.96
0.94
0.92
0.90
1000
100
200
300
500 700
f, FREQUENCY (MHz)
Figure 6. CommonGate Y Parameter
Magnitude versus Frequency
Figure 7. CommonGate S Parameter
Magnitude versus Frequency
f, FREQUENCY (MHz)
I
D
, DRAIN CURRENT (mA)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
G
,
POWER GAIN (dB)
pg
G
,
POWER GAIN (dB)
pg
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
4.0 6.0
8.0
10
12
14
16
18
20
22
24
24
21
18
15
12
9.0
6.0
3.0
0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
50
100
200 300
500 700 1000
26
22
18
14
10
6.0
2.0
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
C
Y
11
Y
21
Y
22
Y
12
S
22
S
21
S
11
S
12
G
pg
NF
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
C
V
DD
= 20 V
f = 450 MHz
BW
10 MHz
CIRCUIT IN FIGURE 1
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
C
CIRCUIT IN FIGURE 1
G
pg
NF
f, FREQUENCY (MHz)
21
,
11
50
40
30
20
10
0
180
170
160
150
140
130
12
,
22
-2
0
-40
-80
-120
-160
-200
-20
-60
-100
-140
-180
87
86
85
84
83
82
1000
100
200
300
500
700
Figure 8. CommonGate Y Parameter
PhaseAngle versus Frequency
f, FREQUENCY (MHz)
11
,
12
120
100
80
60
40
20
-20
-40
-60
-80
-100
-120
21
,
22
0
-40
-80
-20
-60
-100
1000
100
200
300
500
700
Figure 9. S Parameter PhaseAngle
versus Frequency
22
21
12
11
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
C
11
21
22
21
11
12
V
DS
= 10 V
I
D
= 10 mA
T
A
= 25
C
Figure 10. Noise Figure and
Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain
versus Frequency
J308 J309 J310
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5
Figure 12. 450 MHz IMD Evaluation Amplifier
B
W
(3 dB) 36.5 MHz
I
D
10 mAdc
V
DS
20 Vdc
Device case grounded
IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz
C1 = 110 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.56 pF Johanson Air variable trim-
mer.
L1 = 1/8
x 1/32
x 15/8
copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8
x 1/32
x 17/8
copper bar.
INPUT
R
S
= 50
C1
C2
L1
L2
V
S
S
G
D
SHIELD
C3
U310
C4
V
D
L3
C5
L4
C6
OUTPUT
R
L
= 50
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with
C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP)
value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP
values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
Example of intercept point plot use:
Assume two inband signals of 20 dBm at the amplifi-
er input. They will result in a 3rd order IMD signal at
the output of 90 dBm. Also, each signal level at the
output will be 11 dBm, showing an amplifier gain of
9.0 dB and an intermodulation ratio (IMR) capability
of 79 dB. The gain and IMR values apply only for sig-
nal levels below comparison.
Figure 13. Two Tone 3rd Order Intercept Point
-20
-40
-60
-80
-100
-120
OUTPUT
POWER PER
T
ONE (dBm)
-120
+20
-100
-80
-60
INPUT POWER PER TONE (dBm)
0
+20
+40
-40
-20
0
3RD ORDER INTERCEPT POINT
FUNDAMENTAL OUTPUT
3RD ORDER IMD OUTPUT
U310 JFET
V
DS
= 20 Vdc
I
D
= 10 mAdc
F1 = 449.5 MHz
F2 = 450.5 MHz
J308 J309 J310
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6
PACKAGE DIMENSIONS
CASE 2911
ISSUE AL
TO92 (TO226AA)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
J308 J309 J310
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7
Notes
J308 J309 J310
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8
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
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attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative.
J308/D
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