ChipFind - документация

Электронный компонент: LA733P

Скачать:  PDF   ZIP
Semiconductor Components Industries, LLC, 2001
August, 2001 Rev. 1
1
Publication Order Number:
LA733P/D
LA733P, LA733Q
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
CEO
48
Vdc
Collector-Base Voltage
V
CBO
60
Vdc
Emitter-Base Voltage
V
EBO
5.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Total Device Dissipation
@ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation
@ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
Device
Package
Shipping
ORDERING INFORMATION
LA733P
TO92
http://onsemi.com
TO92
CASE 29
STYLE 14
5000 Units/Box
3
2
1
LA733Q
TO92
5000 Units/Box
COLLECTOR
2
3
BASE
1
EMITTER
LA733x = Specific Device Code
x
= P or Q
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
LA
733x
YWW
LA733P, LA733Q
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CollectorEmitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
48
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10
m
Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
5.0
Vdc
CollectorBase Leakage Current
(V
CB
= 60 V)
I
CBO
100
nAdc
EmitterBase Leakage Current
(V
EB
= 5.0 V, I
C
= 0)
I
EBO
100
nAdc
CollectorEmitter Leakage Current
(V
CE
= 50 V)
I
CEO
1.0
m
A
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 6.0 Vdc)
LA733P
LA733Q
h
FE
200
135

400
270
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
CE(sat)
0.3
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
V
BE(sat)
0.9
Vdc
BaseEmitter On Voltage
(I
C
= 1.0 mAdc, V
CE
= 6.0 Vdc)
V
BE(on)
0.55
0.68
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 6.0 Vdc, f = 20 MHz)
f
T
100
450
MHz
CommonBase Output Capacitance
(V
CB
= 60 Vdc, I
C
= 0, f = 1.0 MHz)
C
ob
7.0
pF
Noise Figure
(I
C
= 0.3 mAdc, V
CE
= 6.0 Vdc,
R
G
= 10 k
W
, f = 100 mHz)
NF
18
dB
LA733P, LA733Q
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.5
0.7
-200
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h FE
, NORMALIZED DC CURRENT
GAIN
V
CE
= -10 V
T
A
= 25
C
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
-0.1
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. "Saturation" and "On" Voltages
V
,
VOL
T
AGE (VOL
TS)
T
A
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
I
C
, COLLECTOR CURRENT (mAdc)
Figure 3. CurrentGain -- Bandwidth Product
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
C, CAP
ACIT
ANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
-0.4
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitances
T
A
= 25
C
C
ib
C
ob
r b
, BASE SPREADING RESIST
ANCE (OHMS)
150
140
130
120
110
100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Output Admittance
-0.2
-0.5 -1.0 -2.0
-5.0 -10
-20
-50 -100
V
CE
= -10 V
T
A
= 25
C
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-50
-0.6 -1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
1.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 6. Base Spreading Resistance
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
C
-0.1
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
V
CE
= -10 V
f = 1.0 kHz
T
A
= 25
C
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
0.01
0.03
0.05
0.1
0.3
0.5
h , OUTPUT

ADMITT
ANCE (OHMS)
ob
150
LA733P, LA733Q
http://onsemi.com
4
PACKAGE DIMENSIONS
TO92 (TO226)
CASE 2911
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
LA733P/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 8002829855 Toll Free USA/Canada