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Электронный компонент: MAC223

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Semiconductor Components Industries, LLC, 1999
February, 2000 Rev. 1
1
Publication Order Number:
MAC223A/D
MAC223A6, MAC223A8,
MAC223A10
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies; or
wherever fullwave silicongatecontrolled devices are needed.
OffState Voltages to 800 Volts
All Diffused and Glass Passivated Junctions for Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Construction for Thermal Resistance
and High Heat Dissipation
Gate Triggering Guaranteed in Four Modes
Device Marking: Logo, Device Type, e.g., MAC223A6, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125
C, Sine Wave 50 to
60 Hz, Gate Open)
MAC223A6
MAC223A8
MAC223A10
VDRM,
VRRM
400
600
800
Volts
OnState Current RMS
Full Cycle Sine Wave 50 to 60 Hz
(TC = 80
C)
IT(RMS)
25
A
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TC = 80
C)
Preceded and followed by rated current
ITSM
250
A
Circuit Fusing (t = 8.3 ms)
I2t
260
A2s
Peak Gate Current
(t
v
2.0
sec; TC = +80
C)
IGM
2.0
A
Peak Gate Voltage
(t
v
2.0
sec; TC = +80
C)
VGM
"
10
Volts
Peak Gate Power
(t
v
2.0
sec; TC = +80
C)
PGM
20
Watts
Average Gate Power
(TC = 80
C, t = 8.3 ms)
PG(AV)
0.5
Watts
Operating Junction Temperature Range
TJ
40 to 125
C
Storage Temperature Range
Tstg
40 to 150
C
Mounting Torque
--
8.0
in. lb.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
25 AMPERES RMS
400 thru 800 VOLTS
Device
Package
Shipping
ORDERING INFORMATION
MAC223A6
TO220AB
500/Box
MAC223A8
TO220AB
MAC223A10
TO220AB
TO220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
http://onsemi.com
500/Box
500/Box
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.
MAC223A6, MAC223A8, MAC223A10
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
JC
1.2
C/W
Thermal Resistance, Junction to Ambient
R
JA
60
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise indicated; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
TJ = 25
C
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 125
C
IDRM,
IRRM
--
--
--
--
10
2.0
A
mA
ON CHARACTERISTICS
Peak OnState Voltage (ITM =
"
35 A Peak, Pulse Width
v
2 ms,
Duty Cycle
v
2%)
VTM
--
1.4
1.85
Volts
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(), G(); MT(+), G()
MT2(), G(+)
IGT
--
--
20
30
50
75
mA
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100
)
MT2(+), G(+); MT2(), G(); MT(+), G()
MT2(), G(+)
VGT
--
--
1.1
1.3
2.0
2.5
Volts
Gate Nontrigger Voltage
(VD = 12 V, TJ = 125
C, RL = 100
)
All Quadrants
VGD
0.2
0.4
--
Volts
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current =
"
200 mA)
IH
--
10
50
mA
TurnOn Time
(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)
tgt
--
1.5
--
s
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125
C)
dv/dt
--
40
--
V/
s
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 35 A Peak, Commutating
di/dt = 12.6 A/ms, Gate Unenergized, TC = 80
C)
dv/dt(c)
--
5.0
--
V/
s
MAC223A6, MAC223A8, MAC223A10
http://onsemi.com
3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT
+ IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
MAC223A6, MAC223A8, MAC223A10
http://onsemi.com
4
T
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
C
P
D
125
115
105
95
85
75
40
30
20
10
0
0
5.0
10
15
20
25
IT(RMS), RMS ONSTATE CURRENT (AMPS)
IT(RMS), RMS ONSTATE CURRENT (AMPS)
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
0
5.0
10
15
20
25
Figure 1. RMS Current Derating
Figure 2. OnState Power Dissipation
NORMALIZED GA
TE CURRENT
3.0
2.0
1.0
0.2
0.1
60 40
20
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (
C)
TJ, JUNCTION TEMPERATURE (
C)
TJ, JUNCTION TEMPERATURE (
C)
100
120
140
60 40
20
0
20
40
60
80
100
120
140
60 40
20
0
20
40
60
80
100
120
140
VD = 12 V
RL = 100
200
100
0.1
VTM, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
i TM
,
INST
ANT
ANEOUS ONST
A
TE CURRENT
(AMPS)
0
NORMALIZED GA
TE
VOL
T
AGE
NORMALIZED HOLD CURRENT
0.3
0.5
3.0
2.0
1.0
0.2
0.1
0.3
0.5
2.0
1.0
0.2
0.1
0.3
0.5
0.5
1.0
5.0
10
50
1.0
2.0
3.0
4.0
VD = 12 V
RL = 100
ITM = 200 mA
Gate Open
TJ = 25
C
Figure 3. Typical Gate Trigger Current
Figure 4. Typical Gate Trigger Voltage
Figure 5. Typical Hold Current
Figure 6. Typical OnState Characteristics
MAC223A6, MAC223A8, MAC223A10
http://onsemi.com
5
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
TO220AB
CASE 221A07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.014
0.022
0.36
0.55
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
A
K
L
V
G
D
N
Z
H
Q
F
B
1
2
3
4
T
SEATING
PLANE
S
R
J
U
T
C