Semiconductor Components Industries, LLC, 1999
February, 2000 Rev. 2
1
Publication Order Number:
MAC9/D
MAC9D, MAC9M, MAC9N
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Blocking Voltage to 800 Volts
On-State Current Rating of 8.0 Amperes RMS at 100
C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dv/dt -- 500 V/
s minimum at 125
C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating di/dt -- 6.5 A/ms minimum at 125
C
Device Marking: Logo, Device Type, e.g., MAC9D, Date Code
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125
C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC9D
MAC9M
MAC9N
VDRM,
VRRM
400
600
800
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100
C)
IT(RMS)
8.0
Amps
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 125
C)
ITSM
80
Amps
Circuit Fusing Consideration
(t = 8.3 ms)
I2t
26
A2sec
Peak Gate Power
(Pulse Width
1.0
s, TC = 80
C)
PGM
16
Watts
Average Gate Power
(t = 8.3 ms, TC = 80
C)
PG(AV)
0.35
Watt
Operating Junction Temperature Range
TJ
40 to
+125
C
Storage Temperature Range
Tstg
40 to
+150
C
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
400 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MAC9D
TO220AB
50 Units/Rail
MAC9M
TO220AB
TO220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3
Gate
Main Terminal 1
Main Terminal 2
4
Main Terminal 2
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50 Units/Rail
MT1
G
MT2
MAC9N
TO220AB
50 Units/Rail
MAC9D, MAC9M, MAC9N
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance -- Junction to Case
-- Junction to Ambient
R
JC
R
JA
2.2
62.5
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
TL
260
C
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25
C
TJ = 125
C
IDRM,
IRRM
--
--
--
--
0.01
2.0
mA
ON CHARACTERISTICS
Peak On-State Voltage*
(ITM =
11 A Peak)
VTM
--
1.2
1.6
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
IGT
10
10
10
16
18
22
50
50
50
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current =
150 mA)
IH
--
30
50
mA
Latching Current (VD = 24 V, IG = 50 mA)
MT2(+), G(+); MT2(), G()
MT2(+), G()
IL
--
--
20
30
50
80
mA
Gate Trigger Voltage (VD = 12 V, RL = 100
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
VGT
0.5
0.5
0.5
0.69
0.77
0.72
1.5
1.5
1.5
Volts
Gate NonTrigger Voltage (VD = 12 V, RL = 100
, TJ = 125
C)
MT2(+), G(+); MT2(+), G(); MT2(), G()
VGD
0.2
--
--
Volts
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current; See Figure 10.
(VD = 400 V, ITM = 4.4 A, Commutating dv/dt = 18 V/
s,
Gate Open, TJ = 125
C, f = 250 Hz, No Snubber)
CL = 10
F
LL = 40 mH
(di/dt)c
6.5
--
--
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125
C)
dv/dt
500
--
--
V/
s
*Indicates Pulse Test: Pulse Width
2.0 ms, Duty Cycle
2%.
MAC9D, MAC9M, MAC9N
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3
+ Current
+ Voltage
VTM
IH
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2
VTM
IH
VTM
Maximum On State Voltage
IH
Holding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
() IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
() MT2
REF
MT1
() IGT
GATE
() MT2
REF
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III
Quadrant IV
Quadrant II
Quadrant I
Quadrant Definitions for a Triac
IGT
+ IGT
All polarities are referenced to MT1.
With inphase signals (using standard AC lines) quadrants I and III are used.
MAC9D, MAC9M, MAC9N
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4
Figure 1. RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
120
115
110
105
100
8
7
6
5
4
3
2
1
0
T
C
,
C
AS
E
T
E
M
PE
RA
T
U
R
E
(
C
)
Figure 2. On-State Power Dissipation
IT(RMS), ON-STATE CURRENT (AMP)
8
7
6
5
4
3
2
1
0
12
10
8
6
4
2
P
AV
,
A
VERAGE POWER (W
A
TTS)
0
= 120, 90, 60, 30
= 180
= 30
DC
DC
180
120
90
60
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
I T
, INST
ANT
ANEOUS
ON-ST
A
TE
CURRENT
(AMP)
0.5
1
1.5
2
2.5
3
4
5
10
1
0.1
MAXIMUM @ TJ = 125
C
TYPICAL AT
TJ = 25
C
MAXIMUM @ TJ = 25
C
t, TIME (ms)
r(t), TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1
0.1
0.01
1 104
1000
100
10
1
0.1
3.5
4.5
TJ, JUNCTION TEMPERATURE (
C)
50
I H
, HOLDING CURRENT
(mA)
40
5
10
30
50
70
110
130
10
90
30
10
15
20
25
30
35
Figure 3. On-State Characteristics
Figure 4. Thermal Response
Figure 5. Holding Current Variation
MT2 POSITIVE
MT2 NEGATIVE
MAC9D, MAC9M, MAC9N
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5
TJ, JUNCTION TEMPERATURE (
C)
I GT
, GA
TE
TRIGGER
CURRENT
(mA)
50
30
10
50
90
110
130
100
1
Q2
10
10
30
70
Q1
Q3
TJ, JUNCTION TEMPERATURE (
C)
V
GT
, GA
TE
TRIGGER
VOL
T
AGE
(VOL
T)
1
0.4
50
30
10
10
70
110
130
Q1
Q2
50
90
0.45
0.5
0.55
0.65
0.75
0.85
0.9
0.95
0.6
0.7
0.8
Q3
30
Figure 6. Gate Trigger Current Variation
Figure 7. Gate Trigger Voltage Variation
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential)
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
0
1000
100
10
1
dv/dt
,
CRITICAL
RA
TE OF RISE OF OFF-ST
A
TE VOL
T
AGE
Figure 9. Critical Rate of Rise of
Commutating Voltage
(di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
(V/
s)
tw
VDRM
(di/dt)c =
6f ITM
1000
f =
1
2 tw
TJ = 125
C
100
C
75
C
10
60
100
10
1
(dv/dt)
,
CRITICAL
RA
TE OF RISE OF
(V/
s)
c
COMMUT
A
TING VOL
T
AGE
15
20
25
30
35
40
45
50
55
4.5K
3.5K
2.5K
1.5K
1K
1K
500
MT2 POSITIVE
MT2 NEGATIVE
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
LL
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
NON-POLAR
CL
51
W
MT2
MT1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
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