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Электронный компонент: NB4N11M

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Semiconductor Components Industries, LLC, 2005
November, 2005 - Rev. 1
1
Publication Order Number:
NB4N11M/D
NB4N11M
3.3 V 2.5 Gb/s Multi Level
Clock/Data Input to CML
Receiver/ Buffer/ Translator
Description
T h e N B4 N 11 M i s a d i ff e r e n t i a l 1 -t o -2 c l o c k / d a t a
distribution/translation chip with CML output structure, targeted for
high-speed clock/data applications. The device is functionally
equivalent to the EP11, LVEP11, SG11 or 7L11M devices. Device
produces two identical differential output copies of clock or
data signal operating up to 2.5 GHz or 2.5 Gb/s, respectively. As such,
NB4N11M is ideal for SONET, GigE, Fiber Channel, Backplane and
other clock/data distribution applications.
Inputs accept LVPECL, CML, LVCMOS, LVTTL, or LVDS
(See Table 5). The CML outputs are 16 mA open collector
(See Figure 18) which requires resistor (R
L
) load path to V
TT
termination voltage. The open collector CML outputs must be
terminated to V
TT
at power up. Differential outputs produces
currentmode logic (CML) compatible levels when receiver loaded
with 50
W or 25 W loads connected to 1.8 V, 2.5 V or 3.3 V supplies
(see Figure 19). This simplifies device interface by eliminating a need
for coupling capacitors.
The device is offered in a small 8-pin TSSOP package.
Application notes, models, and support documentation are available
at www.onsemi.com.
Features
Maximum Input Clock Frequency > 2.5 GHz
Maximum Input Data Rate > 2.5 Gb/s
Typically 1 ps of RMS Clock Jitter
Typically 10 ps of Data Dependent Jitter @ 2.5 Gb/s, R
L
= 25
W
420 ps Typical Propagation Delay
150 ps Typical Rise and Fall Times
Operating Range: V
CC
= 3.0 V to 3.6 V with V
EE
= 0 V and
V
TT
= 1.8 V to 3.6 V
Functionally Compatible with Existing 2.5 V / 3.3 V LVEL, LVEP,
EP, and SG Devices
These are Pb-Free Devices*
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING
DIAGRAM*
http://onsemi.com
TSSOP-8
DT SUFFIX
CASE 948R
1
8
E11M
ALYWG
G
1
8
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
ORDERING INFORMATION
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
*For additional marking information, refer to
Application Note AND8002/D.
Figure 1. Functional Block Diagram
Q0
Q0
Q1
Q1
D
D
NB4N11M
http://onsemi.com
2
Figure 2. Pinout (Top View) and Logic Diagram
1
2
3
4
5
6
7
8
D
V
EE
V
CC
Q0
D
Q1
Q1
Q0
Table 1. Pin Description
Pin
Name
I/O
Description
1
Q0
CML Output
Noninverted differential output. Typically receiver terminated with 50 W
resistor to V
TT
. Open collector CML outputs must be terminated to V
TT
at
powerup.
2
Q0
CML Output
Inverted differential output. Typically receiver terminated with 50 W resistor
to V
TT
. Open collector CML outputs must be terminated to V
TT
at powerup.
3
Q1
CML Output
Noninverted differential output. Typically receiver terminated with 50 W
resistor to V
TT
. Open collector CML outputs must be terminated to V
TT
at
powerup.
4
Q1
CML Output
Inverted differential output. Typically receiver terminated with 50 W resistor
to V
TT
. Open collector CML outputs must be terminated to V
TT
at powerup.
5
V
EE
-
Negative supply voltage.
6
D
LVPECL, CML, HSTL,
LVCMOS, LVDS, LVTTL Input
Inverted differential input.
7
D
LVPECL, CML, HSTL,
LVCMOS, LVDS, LVTTL Input
Noninverted differential input.
8
V
CC
-
Positive supply voltage.
NB4N11M
http://onsemi.com
3
Table 2. ATTRIBUTES
Characteristics
Value
ESD Protection
Human Body Model
Machine Model
> 1000 V
> 70 V
Moisture Sensitivity (Note 1)
8-TSSOP
Level 1
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V-0 @ 0.125 in
Transistor Count
197
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Table 3. MAXIMUM RATINGS
Symbol
Parameter
Condition 1
Condition 2
Rating
Unit
V
CC
Positive Power Supply
V
EE
= -0.5 V
4
V
V
EE
Negative Power Supply
V
CC
= +0.5 V
-4
V
V
I
Positive Input
Negative Input
V
EE
= 0 V
V
CC
= 0 V
V
I
= V
CC
+0.4 V
V
I
= V
EE
0.4 V
4
-4
V
V
V
O
Output Voltage
Minimum
Maximum
V
EE
+ 600
V
CC
+ 400
mV
mV
T
A
Operating Temperature Range
-40 to +85
C
T
stg
Storage Temperature Range
-65 to +150
C
q
JA
Thermal Resistance (Junction-to-Ambient)
(Note 2)
0 lfpm
500 lfpm
TSSOP-8
TSSOP-8
190
130
C/W
C/W
q
JC
Thermal Resistance (Junction-to-Case)
1S2P (Note 2)
TSSOP-8
41 to 44
C/W
T
sol
Wave Solder
< 3 Sec @ 260C
265
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
2. JEDEC standard multilayer board - 1S2P (1 signal, 2 power) with 8 filled thermal vias under exposed pad.
NB4N11M
http://onsemi.com
4
Table 4. DC CHARACTERISTICS, CLOCK Inputs, CML Outputs
V
CC
= 3.0 V to 3.6 V, V
EE
= 0 V, T
A
= -40C to +85C
Symbol
Characteristic
Min
Typ
Max
Unit
I
CC
Power Supply Current (Inputs and Outputs Open)
25
35
mA
R
L
= 50 W, V
TT
= 3.6 V to 2.5 V
V
OH
Output HIGH Voltage (Note 3)
V
TT
- 60
V
TT
- 10
V
TT
mV
V
OL
Output LOW Voltage (Note 3)
V
TT
- 1100
V
TT
- 800
V
TT
- 640
mV
|V
OD
|
Differential Output Voltage Magnitude
640
780
1000
mV
R
L
= 25 W, V
TT
= 3.6 V to 2.5 V $5%
V
OH
Output HIGH Voltage (Note 3)
V
TT
- 60
V
TT
- 10
V
TT
mV
V
OL
Output LOW Voltage (Note 3)
V
TT
- 550
V
TT
- 400
V
TT
- 320
mV
|V
OD
|
Differential Output Voltage Magnitude
320
390
500
mV
R
L
= 50 W, V
TT
= 1.8 V $5%
V
OH
Output HIGH Voltage (Note 3)
V
TT
- 170
V
TT
- 10
V
TT
mV
V
OL
Output LOW Voltage (Note 3)
V
TT
- 1100
V
TT
- 800
V
TT
- 640
mV
|V
OD
|
Differential Output Voltage Magnitude
570
780
1000
mV
R
L
= 25 W, V
TT
= 1.8 V $5%
V
OH
Output HIGH Voltage (Note 3)
V
TT
- 85
V
TT
- 10
V
TT
mV
V
OL
Output LOW Voltage (Note 3)
V
TT
- 500
V
TT
- 400
V
TT
- 320
mV
|V
OD
|
Differential Output Voltage Magnitude
285
390
500
mV
DIFFERENTIAL INPUT DRIVEN SINGLE-ENDED (Figures 14 and 16)
V
th
Input Threshold Reference Voltage Range (Note 5)
V
EE
V
CC
mV
V
IH
Single-ended Input HIGH Voltage
V
th
+ 100
V
CC
+ 400
mV
V
IL
Single-ended Input LOW Voltage
V
EE
- 400
V
th
- 100
mV
DIFFERENTIAL INPUTS DRIVEN DIFFERENTIALLY (Figures 15 and 17)
V
IHD
Differential Input HIGH Voltage
V
EE
V
CC
+ 400
mV
V
ILD
Differential Input LOW Voltage
V
EE
- 400
V
CC
- 100
mV
V
CMR
Input Common Mode Range (Differential Configuration)
V
EE
V
CC
mV
|V
ID
|
Differential Input Voltage Magnitude (|V
IHD
- V
ILD
|) (Note 7)
100
V
CC
- V
EE
mV
C
IN
Input Capacitance (Note 7)
1.5
pF
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. CML outputs require R
L
receiver termination resistors to V
TT
for proper operation. Outputs must be connected through R
L
to V
TT
at power
up. The output parameters vary 1:1 with V
TT
.
4. Input parameters vary 1:1 with V
CC
.
5. V
th
is applied to the complementary input when operating in single-ended mode.
6. V
CMR
(MIN) varies 1:1 with V
EE
, V
CMR
max varies 1:1 with V
CC
.
7. Parameter guaranteed by design and evaluation but not tested in production.
NB4N11M
http://onsemi.com
5
Table 5. AC CHARACTERISTICS
V
CC
= 3.0 V to 3.6 V, V
EE
= 0 V; (Note 8)
Symbol
Characteristic
-40C
25C
85C
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
V
OUTPP
Output Voltage Amplitude (R
L
= 50 W)
f
in
1 GHz
(See Figure 12)
f
in
1.5 GHz
f
in
2.5GHz
550
400
150
660
640
400
550
400
150
660
640
400
550
400
150
660
640
400
mV
V
OUTPP
Output Voltage Amplitude (R
L
= 25 W)
f
in
1 GHz
(See Figure 12)
f
in
1.5 GHz
f
in
2.5GHz
280
280
100
370
360
300
280
280
100
370
360
400
280
280
100
370
360
400
mV
f
DATA
Maximum Operating Data Rate
1.5
2.5
1.5
2.5
1.5
2.5
Gb/s
t
PLH
,
t
PHL
Propagation Delay to Output Differential
@ 0.5 GHz
300
420
600
300
420
600
300
420
600
ps
t
SKEW
Duty Cycle Skew (Note 9)
Within Device Skew
Device to Device Skew (Note 13)
2
5
20
20
25
100
2
5
20
20
25
100
2
5
20
20
25
100
ps
t
JITTER
RMS Random Clock Jitter R
L
= 50 W and
R
L
= 25 W (Note 11)
f
in
= 750 MHz
f
in
= 1.5 GHz
f
in
= 2.5 GHz
Peak-to-Peak Data Dependent Jitter R
L
= 50 W
f
DATA
= 1.5 Gb/s
(Note 12)
f
DATA
= 2.5 Gb/s
Peak-to-Peak Data Dependent Jitter R
L
= 25 W
f
DATA
= 1.5 Gb/s
(Note 12)
f
DATA
= 2.5 Gb/s
1
1
1
15
20
5
10
3
3
3
55
85
35
35
1
1
1
15
20
5
10
3
3
3
55
85
35
35
1
1
1
15
20
5
10
3
3
3
55
85
35
35
ps
V
INPP
Input Voltage Swing/Sensitivity
(Differential Configuration) (Note 10)
100
100
100
mV
t
r
t
f
Output Rise/Fall Times @ 0.5 GHz
Q, Q
(20% - 80%)
150
300
150
300
150
300
ps
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
8. Measured by forcing V
INPP
(MIN) from a 50% duty cycle clock source. All output loaded with an external R
L
= 50 W and R
L
= 25 W to V
TT
.
Outputs must be connected through R
L
to V
TT
at power up. Input edge rates 150 ps (20% - 80%).
9. Duty cycle skew is measured between differential outputs using the deviations of the sum of T
pw-
and T
pw+
@ 0.5 GHz.
10.V
INPP
(MAX) cannot exceed V
CC
- V
EE
. Input voltage swing is a single-ended measurement operating in differential mode.
11. Additive RMS jitter with 50% duty cycle clock signal.
12.Additive peak-to-peak data dependent jitter with input NRZ data signal (PRBS 2
23
-1).
13.Device to device skew is measured between outputs under identical transition @ 0.5 GHz.
Figure 3. Output Voltage Amplitude (V
OUTPP
) versus Input Clock Frequency (f
IN
) at Ambient Temperature (Typical)
0
100
200
300
400
500
600
700
800
0.75 1
1.25 1.5 1.75 2
2.25 2.5 2.75 3
R
L
= 50 W
R
L
= 25 W
INPUT CLOCK FREQUENCY (GHz)
OUTPUT
VOL
T
AGE AMPLITUDE (mV)
(V
CC
- V
EE
= 3.3 V V
TT
= 3.3 V @ 255C V
in
= 100 mV)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.75 1
1.25 1.5 1.75 2
2.25 2.5 2.75 3
INPUT CLOCK FREQUENCY (GHz)
OUTPUT
VOL
T
AGE AMPLITUDE (mV)
(V
CC
- V
EE
= 3.0 V V
TT
= 1.71 V @255C V
in
= 100 mV)
R
L
= 50 W
R
L
= 25 W
NB4N11M
http://onsemi.com
6
NB4N11M
0
10
20
30
40
50
60
70
80
0.5 0.75 1
1.25 1.5 1.75 2
2.25 2.5 2.75 3
-40C
25C
85C
INPUT CLOCK FREQUENCY (GHz)
TIME (ps)
Figure 4. Data Dependent Jitter vs. Frequency
and Temperature (V
CC
- V
EE
= 3.3 V; V
TT
= 3.3 V
@ 255C; V
IN
= 100 mV; PRBS 2
23
-1; R
L
= 50 W)
0
5
10
15
20
25
30
35
0.5 0.75 1
1.25 1.5 1.75 2
2.25 2.5 2.75 3
25C
-40C
85C
INPUT CLOCK FREQUENCY (GHz)
TIME (ps)
Figure 5. Data Dependent Jitter vs. Frequency
and Temperature (V
CC
- V
EE
= 3.3 V; V
TT
= 3.3 V
@ 255C; V
IN
= 100 mV; PRBS 2
23
-1; R
L
= 25 W)
300
350
400
450
500
550
600
-40
25
85
Figure 6. Typical Propagation Delay vs.
Temperature (V
CC
- V
EE
= 3.3 V; V
TT
= 3.3 V
@ 255C; V
in
= 100 mV; R
L
= 50 W)
TEMPERATURE (C)
TIME (ps)
t
PD
Figure 7. Typical Propagation Delay vs. Input
Offset Voltage (V
CC
- V
EE
= 3.3 V; V
TT
= 3.3 V
@ 255C; V
in
= 100 mV R
L
= 50 W)
300
350
400
450
500
550
600
t
PD
INPUT OFFSET VOLTAGE (V)
TIME (ps)
V
EE
- 0.5 V
V
CC
+ 0.5 V
V
CC
* V
EE
2
Figure 8. Supply Current vs. Temperature
0
5
10
15
20
25
30
35
-40
25
85
I
CC
TEMPERATURE (C)
CURRENT (mA)
NB4N11M
http://onsemi.com
7
Figure 9. Typical Differential Output Waveform at 750 Mb/s
(R
L
= 50 W Left Plot, R
L
= 25 W Right Plot, V
in
= 100 mV, System DDJ = 24 ps)
Figure 10. Typical Differential Output Waveform 1.5 Gb/s
(R
L
= 50 W Left Plot, R
L
= 25 W Right Plot, V
in
= 100 mV, System DDJ = 25 ps)
DDJ = 5 ps
TIME (266.8 ps/div)
VOL
T
AGE (200 mV/div)
TIME (133.2 ps/div)
VOL
T
AGE (200 mV/div)
TIME (266.8 ps/div)
VOL
T
AGE (100 mV/div)
TIME (133.2 ps/div)
VOL
T
AGE (100 mV/div)
DDJ = 3 ps
DDJ = 5 ps
DDJ = 12 ps
Figure 11. Typical Differential Output Waveform 2.5 Gb/s
(R
L
= 50 W Left Plot, R
L
= 25 W Right Plot, V
in
= 100 mV, System DDJ = 24 ps)
TIME (80 ps/div)
VOL
T
AGE (200 mV/div)
TIME (80 ps/div)
VOL
T
AGE (100 mV/div)
DDJ = 20 ps
DDJ = 7 ps
NB4N11M
http://onsemi.com
8
Figure 12. AC Reference Measurement
D
D
Q
Q
t
PHL
t
PLH
V
INPP
= V
IH
(D) - V
IL
(D)
V
OUTPP
= V
OH
(Q) - V
OL
(Q)
Driver
Device
Receiver
Device
Q
D
Figure 13. Typical Termination for Output Driver and Device Evaluation
Q
D
V
TT
50 W
50 W
Z = 50 W
Z = 50 W
DUT
Figure 14. Differential Input Driven
Single-Ended
Figure 15. Differential Inputs Driven
Differentially
Figure 16. V
th
Diagram
Figure 17. V
CMR
Diagram
D
V
CC
GND
V
IH
V
IHmin
V
IHmax
V
thmax
V
th
V
th
V
thmin
V
CMmax
V
CMmax
D
V
CMR
V
CC
GND
D
D
V
th
V
th
D
D
V
ILmax
V
IL
V
ILmin
D
V
ILCLKmax
V
IHCLKmax
V
ID
= V
IHD
- V
ILD
V
ILDtyp
V
IHDtyp
V
ILDmin
V
IHDmin
NB4N11M
http://onsemi.com
9
D
D
V
CC
R
C
R
C
Figure 18. CML Input and Output Structure
V
EE
1.25 kW
1.25 kW
1.25 kW
1.25 kW
Input
ESD
Input
ESD
Input
ESD
Input
ESD
Internal
Current Source
V
EE
16 mA
Current Source
IN
Q
Q
IN
Input
Output
NB4N11M
http://onsemi.com
10
Figure 19. Typical Examples of the Application Interface
Receiver
A
Receiver
B
V
CCB
= 1.8 V 2.5 V or 3.3 V
V
CCA
= 1.8 V 2.5 V or 3.3 V
V
CC
= 3.3 V
V
EE
= 0 V
50 W
50 W
50 W
50 W
50 W
50 W
V
TTB
= V
CCB
V
TTB
= V
CCB
V
TTA
= V
CCA
Z = 50 W
Z = 50 W
Z = 50 W
Z = 50 W
NB4N11M
Receiver
C
Receiver
D
V
CCD
= 1.8 V 2.5 V or 3.3 V
V
CCC
= 1.8 V 2.5 V or 3.3 V
V
CC
= 3.3 V
V
EE
= 0 V
100 W
100 W
75 W
75 W
V
TTD
= V
CCD
V
TTC
= V
CCC
Z = 75 W
Z = 75 W
Z = 100 W
Z = 100 W
NB4N11M
ORDERING INFORMATION
Device
Package
Shipping
NB4N11MDTG
TSSOP-8
(Pb-Free)
100 Units / Rail
NB4N11MDTR2G
TSSOP-8
(Pb-Free)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NB4N11M
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11
PACKAGE DIMENSIONS
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
2.90
3.10
0.114
0.122
B
2.90
3.10
0.114
0.122
C
0.80
1.10
0.031
0.043
D
0.05
0.15
0.002
0.006
F
0.40
0.70
0.016
0.028
G
0.65 BSC
0.026 BSC
L
4.90 BSC
0.193 BSC
M
0
6
0
6
_
_
_
_
SEATING
PLANE
PIN 1
1
4
8
5
DETAIL E
B
C
D
A
G
DETAIL E
F
M
L
2X
L/2
-U-
S
U
0.15 (0.006) T
S
U
0.15 (0.006) T
S
U
M
0.10 (0.004)
V
S
T
0.10 (0.004)
-T-
-V-
-W-
0.25 (0.010)
8x REF
K
IDENT
K
0.25
0.40
0.010
0.016
TSSOP-8
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948R-02
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED 0.25 (0.010)
PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE -W-.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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