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Электронный компонент: NCP1575DR2

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Semiconductor Components Industries, LLC, 2004
November, 2004 - Rev. 6
1
Publication Order Number
NCP1575/D
NCP1575
Low Voltage Synchronous
Buck Controller with
Adjustable Switching
Frequency
The NCP1575 is a low voltage buck controller. It provides the
control for a DC-DC power solution producing an output voltage as
low as 0.980 V over a wide current range. It contains all required
circuitry for a synchronous NFET buck regulator using the V
2
t
control method to achieve the fastest possible transient response and
best overall regulation. The NCP1575 operates at a default switching
frequency of 200 kHz, but switching frequency is user-programmable
with an additional resistor between R
OSC
and ground. This device
provides undervoltage lockout protection, soft-start, and built-in
adaptive nonoverlap and is assembled in an SOIC-8 package.
The NCP1575-based solution requires a bias supply of 12 V, and it
can convert from a bulk power supply ranging from 2 V to 12 V.
Conversion from bulk supplies greater than 7 V is best accomplished
by using an external doubler circuit to raise the enhancement voltage
for the external NFET switches.
Features
Pb-Free Packages are Available
0.980 V
1.0% Reference Voltage
V
2
Control Topology
200 ns Transient Response
Programmable Soft-Start
40 ns Gate Rise and Fall Times (3.3 nF Load)
Adaptive FET Nonoverlap Time
Default 200 kHz Oscillator Frequency (No External
Resistor Required)
User-Programmable Oscillator Frequency (One External
Resistor Required)
Undervoltage Lockout
On/Off Control Through Use of the COMP Pin
Overvoltage Protection through Synchronous MOSFETs
Synchronous N-Channel Buck Design
"12 V Only" or Dual Supply Operation
Device
Package
Shipping
ORDERING INFORMATION
NCP1575D
SOIC-8
98 Units/Rail
NCP1575DR2
2500 Tape & Reel
SOIC-8
D SUFFIX
CASE 751
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
GATE(H)
COMP
1
8
GATE(L)
NC
V
FB
R
OSC
GND
V
CC
PIN CONNECTIONS
1
8
http://onsemi.com
1575
ALYW
1
8
MARKING
DIAGRAM
NCP1575DG
SOIC-8
(Pb-Free)
98 Units/Rail
SOIC-8
SOIC-8
(Pb-Free)
NCP1575DR2G
2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NCP1575
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2
Figure 1. 12 V Only Applications Diagram, 12 V to 2.5 V Conversion at 10 A
Figure 2. 12 V/5 V Applications Diagram, 350 kHz, 5 V to 1.2 V Conversion at 10 A
V
CC
R
OSC
NC
COMP
GND
V
FB
GATE(L)
GATE(H)
NCP1575
0.1
m
F
33 k
0.1
m
F
12 V
NTD4302
NTD4302
1.2 V/ 10 A
56
m
F
4 V/1.6 A RMS
2
Specialty Polymer
40 m
W
ESR
1.4
m
H
33
m
F
8 V/1.6 A RMS
2
Specialty Polymer
60 m
W
ESR
2.26 k
10 k
5 V
1000 pF
1000
m
F/16 V
C10
4700 pF
C3
0.1
m
F
V
CC
R
OSC
NC
COMP
GND
V
FB
GATE(L)
GATE(H)
NCP1575
C11
0.1
m
F
R3
Option
12 V
2.5 V/
10 A
C4
18 V Zener
BZX84C18V
L1
1.0
m
H
+
C1
+
C2
U1
R5
3.32 k
0.98 V
R6
5.11 k
Q2
L2
4.7
m
H
Q1
+
C5
1000
m
F
+
C6
1000
m
F
C8
104
C9
0.01
m
F
NTD60N02R
NTD110N02R
D1
1.0
m
F
R1
470
Q3
MMBT3904LT1
1000
m
F/16 V
D3
BAS20HT1
C11
0.1
m
F
D2
BAV99LT1
NCP1575
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3
C10
4700 pF
C3*
0.033
m
F
R1
15
Figure 3. 12 V Only Applications Diagram, 12 V to 2.5 V Conversion at 6 A
V
CC
R
OSC
NC
COMP
GND
V
FB
GATE(L)
GATE(H)
NCP1575
C11
0.1
m
F
R3
Option
open
12 V
2.5 V/
6.0 A
C4
205
D2
BAV99LT1
D1
5.6 V Zener
BZX84C5V6
R7
15
L1
1.0
m
H
+
C1
1000
m
F/16 V
+
C2
1000
m
F/16 V
U1
C9
10000 pF
R5
3.3 k
0.98 V
R6
5.1 k
Q4
NTD30N02
L2
2.4
m
H
Q1
NTD30N02
+
C5
1000
m
F
+
C6
1000
m
F
C8
104
*C3 value is dependent on MOSFET
gate drive current. Incorrect values
may cause poor V
CC
regulation or
excessive power dissipation in D1.
NCP1575
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4
MAXIMUM RATINGS
Rating
Value
Unit
Operating Junction Temperature
150
C
Storage Temperature Range
-65 to 150
C
ESD Susceptibility (Human Body Model)
2.0
kV
ESD Susceptibility (Charged Device Model)
200
V
Lead Temperature Soldering:
Reflow: (Note 1)
230 peak
C
Moisture Sensitivity Level
2
-
Package Thermal Resistance, SOIC-8:
Junction-to-Case, R
q
JC
Junction-to-Ambient, R
q
JA
48
165
C/W
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. 60 second maximum above 183
C.
MAXIMUM RATINGS
Pin Name
Symbol
V
MAX
V
MIN
I
SOURCE
I
SINK
IC Power Input
V
CC
20 V
-0.5 V
N/A
1.5 A Peak, 450 mA DC
Compensation Capacitor
COMP
6.0 V
-0.5 V
10 mA
10 mA
Voltage Feedback Input
V
FB
6.0 V
-0.5 V
1.0 mA
1.0 mA
Frequency Adjust
R
OSC
6.0 V
-0.5 V
1.0 mA
1.0 mA
High-Side FET Driver
GATE(H)
20 V
-0.5 V, -2.0 V for 50 ns
1.5 A Peak, 200 mA DC
1.5 A Peak, 200 mA DC
Low-Side FET Driver
GATE(L)
20 V
-0.5 V, -2.0 V for 50 ns
1.5 A Peak, 200 mA DC
1.5 A Peak, 200 mA DC
Ground
GND
0.5 V
-0.5 V
1.5 A Peak, 450 mA DC
N/A
ELECTRICAL CHARACTERISTICS
(0
C < T
J
< 125
C, 9.0 V < V
CC
< 20 V, C
GATE(H)
= C
GATE(L)
= 3.3 nF,
C
COMP
= 0.1
m
F, R
OSC
= 74 k
W
; unless otherwise specified.) Note 2
Characteristic
Test Conditions
Min
Typ
Max
Unit
Error Amplifier
V
FB
Bias Current
V
FB
= 0 V
-
0.4
2.0
m
A
COMP Source Current
COMP = 1.5 V, V
FB
= 0.8 V
15
30
60
m
A
COMP Sink Current
COMP = 1.5 V, V
FB
= 1.2 V
15
30
60
m
A
Reference Voltage
COMP = V
FB
T
J
< 25
C
0.970
0.965
0.980
0.980
0.990
0.995
V
V
COMP Max Voltage
V
FB
= 0.8 V
2.4
3.1
-
V
COMP Min Voltage
V
FB
= 1.2 V
-
0.1
0.2
V
COMP Fault Discharge Current at UVLO
COMP = 1.2 V, V
CC
= 6.9 V
0.5
1.2
-
mA
COMP Fault Discharge Threshold to
Reset UVLO
-
0.1
0.25
0.3
V
Open Loop Gain
-
-
98
-
dB
Unity Gain Bandwidth
-
-
20
-
kHz
PSRR @ 1.0 kHz
-
-
70
-
dB
Output Transconductance
-
-
32
-
mmho
Output Impedance
-
-
2.5
-
M
W
2. Characteristics at temperature extremes are guaranteed via correlation using quality statistical control methods.
NCP1575
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5
ELECTRICAL CHARACTERISTICS
(0
C < T
J
< 125
C, 9.0 V < V
CC
< 20 V, C
GATE(H)
= C
GATE(L)
= 3.3 nF,
C
COMP
= 0.1
m
F, R
OSC
= 74 k
W
; unless otherwise specified.) Note 3
Characteristic
Test Conditions
Min
Typ
Max
Unit
GATE(H) and GATE(L)
Rise Time
1.0 V < GATE(L), GATE(H) < V
CC
- 2.0 V,
V
CC
= 12 V
-
40
80
ns
Fall Time
V
CC
- 2.0 V < GATE(L), GATE(H) < 1.0 V,
V
CC
= 12 V
-
40
80
ns
GATE(H) to GATE(L) Delay
GATE(H) < 2.0 V, GATE(L) > 2.0 V
40
60
105
ns
GATE(L) to GATE(H) Delay
GATE(L) < 2.0 V, GATE(H) > 2.0 V
40
60
105
ns
Minimum Pulse Width
GATE(X) = 4.0 V
-
250
-
ns
High Voltage (AC)
Measure GATE(L) or GATE(H)
0.5 nF < C
GATE(H)
= C
GATE(L)
< 10 nF, Note 4
V
CC
-
0.5
V
CC
-
V
Low Voltage (AC)
Measure GATE(L) or GATE(H)
0.5 nF < C
GATE(H)
= C
GATE(L)
< 10 nF, Note 4
-
0
0.5
V
GATE(H)/(L) Pull-Down
Resistance to GND. Note 4
20
50
115
k
W
PWM Comparator
PWM Comparator Offset
V
FB
= 0 V, Increase COMP Until GATE(H)
Starts Switching
0.415
0.465
0.525
V
Ramp Max Duty Cycle
-
-
80
-
%
Artificial Ramp
Duty Cycle = 50%, R
OSC
= 74 k
W
50
63
75
mV
Transient Response
COMP = 1.5 V, V
FB
20 mV Overdrive. Note 4
-
200
300
ns
V
FB
Input Range
Note 4
0
-
1.4
V
Oscillator
Switching Frequency
R
OSC
Not Used
R
OSC
= 74 k
W
170
240
200
280
230
320
kHz
kHz
General Electrical Specifications
V
CC
Supply Current
COMP = 0 V (No Switching)
-
9.0
12
mA
Start Threshold
GATE(H) Switching, COMP Charging
8.0
8.5
9.0
V
Stop Threshold
GATE(H) Not Switching, COMP Discharging
7.0
7.5
8.0
V
Hysteresis
Start - Stop
0.75
1.0
1.25
V
3. Characteristics at temperature extremes are guaranteed via correlation using quality statistical control methods.
4. Guaranteed by design. Not tested in production.
NCP1575
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6
PACKAGE PIN DESCRIPTION
PIN #
PIN SYMBOL
FUNCTION
1
V
CC
Power supply input.
2
R
OSC
Frequency adjust pin. If not used, oscillator frequency is nominally 200 kHz. Connecting R
OSC
to ground
through a single resistor will increase oscillator frequency.
3
NC
No connect.
4
COMP
Error amp output. PWM comparator reference input. A capacitor to LGND provides error amp compensa-
tion and Soft-Start. Pulling pin < 0.415 V locks gate outputs to a zero percent duty cycle state.
5
GATE(H)
High-side switch FET driver pin. Capable of delivering peak currents of 1.5 A.
6
GATE(L)
Low-side synchronous FET driver pin. Capable of delivering peak currents of 1.5 A.
7
V
FB
Error amplifier and PWM comparator input.
8
GND
Power supply return.
Oscillator
200 kHz
Figure 4. Block Diagram
-
+
+
-
UVLO Comp
S
Q
UVLO Latch
R
V
CC
GND
8.5 V/7.5 V
-
+
+
-
0.25 V
-
+
+
-
0.98 V
Error Amp
V
FB
COMP
-
+
PWM Comp
S
- +
0.465 V
R
Q
PWM Latch
S
Reset
Dominant
Set
Dominant
Frequency
Adjust
GATE(H)
GATE(L)
NC
R
OSC
V
CC
V
CC
Nonoverlap
NCP1575
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7
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 5. Supply Current vs. Temperature
Figure 6. Oscillator Frequency vs. Temperature
(No R
OSC
)
Figure 7. Oscillator Frequency vs. R
OSC
Value
Figure 8. Oscillator Frequency (R
OSC
= 74 k
W
)
vs. Temperature
Figure 9. Artificial Ramp at 50% Duty Cycle
vs. R
OSC
Value
Figure 10. Reference Voltage vs. Temperature
0
I
CC
(mA)
5
Temperature (
C)
6
7
8
9
10
20
40
60
80
100
120
0
Oscillator Frequency (kHz)
202
Temperature (
C)
204
206
208
210
212
214
216
20
40
60
80
120
100
0
0.976
Temperature (
C)
20
40
60
80
100
120
0.984
0.983
0.982
0.981
0.980
0.979
0.978
0.977
Reference V
oltage (V)
10
Oscillator Frequency (kHz)
100
R
OSC
Value (k
W
)
200
300
400
500
600
100
1000
0
Oscillator Frequency (kHz)
270
Temperature (
C)
275
280
285
290
295
300
20
40
60
80
120
100
10
Artificial Ramp (mV)
50
R
OSC
Value (k
W
)
55
60
65
70
100
1000
NCP1575
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8
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 11. PWM Offset Voltage vs. Temperature
Figure 12. Undervoltage Lockout Thresholds vs.
Temperature
Figure 13. V
FB
Bias Current vs. Temperature
Figure 14. Error Amp Output Currents vs. Temperature
Figure 15. COMP Voltages vs. Temperature
0
PWM Of
fset V
oltage (mV)
450
Temperature (
C)
455
460
465
470
20
40
60
80
100
120
0
Start/Stop Threshold V
oltages (V)
7.2
Temperature (
C)
7.4
7.6
7.8
8.0
8.2
8.4
8.6
20
40
60
80
120
100
Turn-On
Threshold
Turn-Off
Threshold
0
0.40
Temperature (
C)
20
40
60
80
100
120
0.60
0.55
0.50
0.45
Bias Current (
m
A)
0
24
Temperature (
C)
20
40
60
80
100
120
Output Current (
m
A)
31
30
29
28
27
26
25
Sink Current
Source Current
0
0
Temperature (
C)
20
40
60
80
100
120
3.5
3.0
2.5
2.0
1.5
1.0
0.5
COMP V
oltages (V)
COMP Maximum
COMP Minimum
Voltage
COMP Fault
Threshold Voltage
Voltage
Figure 16. COMP Fault Mode Discharge Current vs.
Temperature
0
Discharge
Current (mA)
0.90
Temperature (
C)
0.95
1.00
1.05
1.15
1.20
20
40
60
80
100
120
1.10
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TYPICAL PERFORMANCE CHARACTERISTICS
Figure 17. GATE Output Rise and Fall Times vs.
Temperature (V
CC
= 12 V)
Figure 18. GATE Nonoverlap Times vs. Temperature
Figure 19. Artificial Ramp at 50% Duty Cycle
(R
OSC
Not Used)
0
GA
TE Rise/Fall T
imes (ns)
20
Temperature (
C)
22
24
26
32
34
36
38
20
40
60
80
120
100
30
28
0
Gate Non-Overlap T
ime (ns)
30
Temperature (
C)
35
40
45
50
55
20
40
60
80
100
120
GATEL Fall Time
GATEH Fall Time
GATEH Rise Time
GATEL Rise Time
GATEH to GATEL
Delay Time
GATEL to GATEH
Delay Time
0
Artificial Ramp (mV)
50
Temperature (
C)
55
60
65
70
20
40
60
80
120
100
NCP1575
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10
APPLICATION INFORMATION
THEORY OF OPERATION
The NCP1575 is a simple, synchronous, fixed-frequency,
low-voltage buck controller using the V
2
control method.
V
2
Control Method
The V
2
control method uses a ramp signal generated by
the ESR of the output capacitors. This ramp is proportional
to the ac current through the main inductor and is offset by
the dc output voltage. This control scheme inherently
compensates for variation in either line or load conditions,
since the ramp signal is generated from the output voltage
itself. The V
2
method differs from traditional techniques
such as voltage mode control, which generates an artificial
ramp, and current mode control, which generates a ramp
using the inductor current.
Figure 20. V
2
Control with Slope Compensation
COMP
Reference
Voltage
+
+
PWM
RAMP
Error
Amplifier
Error
Signal
Output
Voltage
V
FB
GATE(H)
GATE(L)
-
-
Slope
Compensation
The V
2
control method is illustrated in Figure 20. The
output voltage generates both the error signal and the ramp
signal. Since the ramp signal is simply the output voltage, it
is affected by any change in the output, regardless of the
origin of that change. The ramp signal also contains the DC
portion of the output voltage, allowing the control circuit to
drive the main switch from 0% to 100% duty cycle as
required.
A variation in line voltage changes the current ramp in the
inductor, which causes the V
2
control scheme to compensate
the duty cycle. Since any variation in inductor current
modifies the ramp signal, as in current mode control, the V
2
control scheme offers the same advantages in line transient
response.
A variation in load current will affect the output voltage,
modifying the ramp signal. A load step immediately changes
the state of the comparator output, which controls the main
switch. The comparator response time and the transition
speed of the main switch determine the load transient
response. Unlike traditional control methods, the reaction
time to the output load step is not related to the crossover
frequency of the error signal loop.
The error signal loop can have a low crossover frequency,
since the transient response is handled by the ramp signal
loop. The main purpose of this `slow' feedback loop is to
provide dc accuracy. Noise immunity is significantly
improved, since the error amplifier bandwidth can be rolled
off at a low frequency. Enhanced noise immunity improves
remote sensing of the output voltage, since the noise
associated with long feedback traces can be effectively
filtered.
Line and load regulation are drastically improved because
there are two independent control loops. A voltage mode
controller relies on the change in the error signal to
compensate for a deviation in either line or load voltage.
This change in the error signal causes the output voltage to
change corresponding to the gain of the error amplifier,
which is normally specified as line and load regulation. A
current mode controller maintains a fixed error signal during
line transients, since the slope of the ramp signal changes in
this case. However, regulation of load transients still requires
a change in the error signal. The V
2
method of control
maintains a fixed error signal for both line and load variation,
since the ramp signal is affected by both line and load.
The stringent load transient requirements of modern
microprocessors require the output capacitors to have very
low ESR. The resulting shallow slope in the output ripple can
lead to pulse width jitter and variation caused by both random
and synchronous noise. A ramp waveform generated in the
oscillator is added to the ramp signal from the output voltage
to provide the proper voltage ramp at the beginning of each
switching cycle. This slope compensation increases the noise
immunity, particularly at duty cycles above 50%.
Startup
The NCP1575 features a programmable soft-start
function, which is implemented through the error amplifier
and the external compensation capacitor. This feature
prevents stress to the power components and limits output
voltage overshoot during startup. As power is applied to the
regulator, the NCP1575 undervoltage lockout circuit (UVL)
monitors the IC's supply voltage (V
CC
). The UVL circuit
holds the GATE(H) output low and the GATE(L) output
high until V
CC
exceeds the 8.5 V threshold. A hysteresis
function of 1.0 V improves noise immunity. The
compensation capacitor connected to the COMP pin is
charged by a 30
mA current source. When the capacitor
voltage exceeds the 0.465 V offset of the PWM comparator,
the PWM control loop will allow switching to occur. The
upper gate driver GATE(H) is activated, turning on the upper
MOSFET. The current ramps up through the main inductor
and linearly powers the output capacitors and load. When
the regulator output voltage exceeds the COMP pin voltage
minus the 0.465 V PWM comparator offset threshold and
the artificial ramp, the PWM comparator terminates the
initial pulse.
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11
Figure 21. Idealized Waveforms
8.5 V
0.465 V
V
IN
V
COMP
V
FB
GATE(H)
UVLO
STARTUP
NORMAL OPERATION
t
S
Normal Operation
During normal operation, the duty cycle of the gate drivers
remains approximately constant as the V
2
control loop
maintains the regulated output voltage under steady state
conditions. Variations in supply line or output load conditions
will result in changes in duty cycle to maintain regulation.
Input Supplies
The NCP1575 can be used in applications where a 12 V
supply is available along with a lower voltage supply. Often
the lower voltage supply is 5 V, but it can be any voltage less
than the 12 V supply minus the required gate drive voltage
of the top MOSFET. The greater the difference between the
two voltages, the better the efficiency due to increasing V
GS
available to turn on the upper MOSFET. In order to maintain
power supply stability, the lower supply voltage should be
at least 1.5 times the desired voltage.
Adding a few additional components allows the NCP1575
to convert power in a "12 V only" application. This circuit
is illustrated in Figure 1. Note that in all cases, the maximum
supply voltage specification of 20 V must not be exceeded.
Gate Charge Effect on Switching Times
When using the onboard gate drivers, the gate charge has
an important effect on the switching times of the FETs. A
finite amount of time is required to charge the effective
capacitor seen at the gate of the FET. Therefore, the rise and
fall times rise linearly with increased capacitive loading.
Transient Response
The 200 ns reaction time of the control loop provides fast
transient response to any variations in input voltage and
output current. Pulse-by-pulse adjustment of duty cycle is
provided to quickly ramp the inductor current to the required
level. Since the inductor current cannot be changed
instantaneously, regulation is maintained by the output
capacitors during the time required to slew the inductor
current. For better transient response, several high
frequency and bulk output capacitors are usually used.
Overvoltage Protection
Overvoltage protection is provided as a result of the
normal operation of the V
2
control method and requires no
additional external components. The control loop responds
to an overvoltage condition within 200 ns, turning off the
upper MOSFET and disconnecting the regulator from its
input voltage. This results in a crowbar action to clamp the
output voltage, preventing damage to the load. The regulator
remains in this state until the overvoltage condition ceases.
Shutdown
When the input voltage connected to V
CC
falls through the
lower threshold of the UVLO comparator, a fault latch is set.
The fault latch provides a signal that forces both GATE(H)
low and GATE(L) high, producing a low-impedance current
sink to ground at the converter switch node. At the same
time, the latch also turns on a transistor which pulls down on
the COMP pin, quickly discharging the external capacitor,
and allowing COMP to fall.
CONVERTER DESIGN
Choosing the V
OUT
Resistor Divider Values
The NCP1575 has an internal 0.98 V reference. A resistor
divider is used to set the output voltage.
R1
R2
V
OUT
V
FB
Figure 22.
The formula to set the output voltage is
VOUT
+
(R1 R2
)
1)
<
(0.98 V)
Arbitrarily choose a value of R2 that is sufficiently low
that the V
FB
bias current (typically 50 nA) will have
negligible effect on the output voltage. Solve the equation
above for the value of R1.
Choosing the Oscillator Frequency
The NCP1575 has an oscillator that is trimmed to 200 kHz
at the factory. The NCP1575 will operate at this frequency
without the addition of any external components. However,
the oscillator is user-programmable with a single resistor.
This resistor is connected between the R
OSC
pin and ground.
Adding this resistor will raise the frequency above 200 kHz.
A graph of oscillator frequency vs. R
OSC
resistance is
provided in the typical operating characteristics section of
this data sheet.
Selection of the Output Capacitors
These components must be selected and placed carefully
to yield optimal results. Capacitors should be chosen to
provide acceptable ripple on the regulator output voltage.
Key specifications for output capacitors are their Equivalent
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12
Series Resistance (ESR), and Equivalent Series Inductance
(ESL). For best transient response, a combination of low
value/high frequency and bulk capacitors placed close to the
load will be required.
In order to determine the number of output capacitors the
maximum voltage transient allowed during load transitions
has to be specified. The output capacitors must hold the
output voltage within these limits since the inductor current
can not change with the required slew rate. The output
capacitors must therefore have a very low ESL and ESR.
The voltage change during the load current transient is:
D
VOUT
+ D
IOUT
ESL
D
t
)
ESR
)
tTR
COUT
where:
DI
OUT
/
Dt = load current slew rate;
DI
OUT
= load transient;
Dt = load transient duration time;
ESL = Maximum allowable ESL including capacitors,
circuit traces, and vias;
ESR = Maximum allowable ESR including capacitors
and circuit traces;
t
TR
= output voltage transient response time.
The designer has to independently assign values for the
change in output voltage due to ESR, ESL, and output
capacitor discharging or charging. Empirical data indicates
that most of the output voltage change (droop or spike
depending on the load current transition) results from the
total output capacitor ESR.
The maximum allowable ESR can then be determined
according to the formula:
ESRMAX
+ D
VESR
D
IOUT
where:
DV
ESR
= change in output voltage due to ESR (assigned
by the designer)
Once the maximum allowable ESR is determined, the
number of output capacitors can be found by using the
formula:
Number of capacitors
+
ESRCAP
ESRMAX
where:
ESR
CAP
= maximum ESR per capacitor (specified in
manufacturer's data sheet).
ESR
MAX
= maximum allowable ESR.
The actual output voltage deviation due to ESR can then
be verified and compared to the value assigned by the
designer:
D
VESR
+ D
IOUT
ESRMAX
Similarly, the maximum allowable ESL is calculated from
the following formula:
ESLMAX
+ D
VESL
D
t
D
I
Selection of the Input Inductor
A common requirement is that the buck controller must
not disturb the input voltage. One method of achieving this
is by using an input inductor and a bypass capacitor. The
input inductor isolates the supply from the noise generated
in the switching portion of the buck regulator and also limits
the inrush current into the input capacitors upon power up.
The inductor's limiting effect on the input current slew rate
becomes increasingly beneficial during load transients. The
worst case is when the load changes from no load to full load
(load step), a condition under which the highest voltage
change across the input capacitors is also seen by the input
inductor. The inductor successfully blocks the ripple current
while placing the transient current requirements on the input
bypass capacitor bank, which has to initially support the
sudden load change.
The minimum inductance value for the input inductor is
therefore:
LIN
+
D
V
(dI dt)MAX
where:
L
IN
= input inductor value;
DV = voltage seen by the input inductor during a full load
swing;
(dI/dt)
MAX
= maximum allowable input current slew rate.
The designer must select the LC filter pole frequency so
that at least 40 dB attenuation is obtained at the regulator
switching frequency. The LC filter is a double-pole network
with a slope of -2.0, a roll-off rate of -40 dB/dec, and a
corner frequency:
fC
+
1
2
p
LC
where:
L = input inductor;
C = input capacitor(s).
Selection of the Output Inductor
There are many factors to consider when choosing the
output inductor. Maximum load current, core and winding
losses, ripple current, short circuit current, saturation
characteristics, component height and cost are all variables
that the designer should consider. However, the most
important consideration may be the effect inductor value has
on transient response.
The amount of overshoot or undershoot exhibited during
a current transient is defined as the product of the current
step and the output filter capacitor ESR. Choosing the
inductor value appropriately can minimize the amount of
energy that must be transferred from the inductor to the
capacitor or vice-versa. In the subsequent paragraphs, we
will determine the minimum value of inductance required
for our system and consider the trade-off of ripple current
vs. transient response.
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13
In order to choose the minimum value of inductance, input
voltage, output voltage and output current must be known.
Most computer applications use reasonably well regulated
bulk power supplies so that, while the equations below
specify V
IN(MAX)
or V
IN(MIN)
, it is possible to use the
nominal value of V
IN
in these calculations with little error.
Current in the inductor while operating in the continuous
current mode is defined as the load current plus ripple
current.
IL
+
ILOAD
)
IRIPPLE
The ripple current waveform is triangular, and the current
is a function of voltage across the inductor, switch FET
on-time and the inductor value. FET on-time can be defined
as the product of duty cycle and switch frequency, and duty
cycle can be defined as a ratio of V
OUT
to V
IN
. Thus,
IRIPPLE
+
(VIN
*
VOUT)VOUT
(fOSC)(L)(VIN)
Peak inductor current is defined as the load current plus
half of the peak current. Peak current must be less than the
maximum rated FET switch current, and must also be less
than the inductor saturation current. Thus, the maximum
output current can be defined as:
IOUT(MAX)
+
ISWITCH(MAX)
*
VIN(MAX)
*
VOUT VOUT
2 fOSC L VIN(MAX)
Since the maximum output current must be less than the
maximum switch current, the minimum inductance required
can be determined.
L(MIN)
+
(VIN(MIN)
*
VOUT)VOUT
(fOSC)(ISWITCH(MAX))(VIN(MIN))
This equation identifies the value of inductor that will
provide the full rated switch current as inductor ripple
current, and will usually result in inefficient system
operation. The system will sink current away from the load
during some portion of the duty cycle unless load current is
greater than half of the rated switch current. Some value
larger than the minimum inductance must be used to ensure
the converter does not sink current. Choosing larger values
of inductor will reduce the ripple current, and inductor value
can be designed to accommodate a particular value of ripple
current by replacing I
SWITCH(MAX)
with a desired value of
I
RIPPLE
:
L(RIPPLE)
+
(VIN(MIN)
*
VOUT)VOUT
(fOSC)(IRIPPLE)(VIN(MIN))
However, reducing the ripple current will cause transient
response times to increase. The response times for both
increasing and decreasing current steps are shown below.
TRESPONSE(INCREASING)
+
(L)(
D
IOUT)
(VIN
*
VOUT)
TRESPONSE(DECREASING)
+
(L)(
D
IOUT)
(VOUT)
Inductor value selection also depends on how much output
ripple voltage the system can tolerate. Output ripple voltage
is defined as the product of the output ripple current and the
output filter capacitor ESR.
Thus, output ripple voltage can be calculated as:
VRIPPLE
+
ESRC IRIPPLE
+
ESRC VIN
*
VOUT VOUT
fOSC L VIN
Finally, we should consider power dissipation in the
output inductors. Power dissipation is proportional to the
square of inductor current:
PD
+
(I
2
L
)(ESRL)
The temperature rise of the inductor relative to the air
surrounding it is defined as the product of power dissipation
and thermal resistance to ambient:
D
T(inductor)
+
(Ra)(PD)
Ra for an inductor designed to conduct 20 A to 30 A is
approximately 45
C/W. The inductor temperature is given as:
T(inductor)
+ D
T(inductor)
)
Tambient
V
CC
Bypass Filtering
A small RC filter should be added between module V
CC
and the V
CC
input to the IC. A 10
W resistor and a 0.47 mF
capacitor should be sufficient to ensure the controller IC does
not operate erratically due to injected noise, and will also
supply reserve charge for the onboard gate drivers.
Input Filter Capacitors
The input filter capacitors provide a charge reservoir that
minimizes supply voltage variations due to changes in current
flowing through the switch FETs. These capacitors must be
chosen primarily for ripple current rating.
Figure 23.
V
IN
V
OUT
I
IN(AVE)
I
RMS(CIN)
C
IN
CONTROL
INPUT
L
IN
L
OUT
C
OUT
Consider the schematic shown in Figure 23. The average
current flowing in the input inductor L
IN
for any given
output current is:
IIN(AVE)
+
IOUT
VOUT
VIN
Input capacitor current is positive into the capacitor when
the switch FETs are off, and negative out of the capacitor
when the switch FETs are on. When the switches are off,
I
IN(AVE)
flows into the capacitor. When the switches are on,
capacitor current is equal to the per-phase output current
NCP1575
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14
minus I
IN(AVE)
. If we ignore the small current variation due
to the output ripple current, we can approximate the input
capacitor current waveform as a square wave. We can then
calculate the RMS input capacitor ripple current:
IRMS(CIN)
+
I
2
IN(AVE)
)
VOUT
VIN
IOUT per phase
*
IIN(AVE) 2
*
I
2
IN(AVE)
The input capacitance must be designed to conduct the
worst case input ripple current. This will require several
capacitors in parallel. In addition to the worst case current,
attention must be paid to the capacitor manufacturer's
derating for operation over temperature.
As an example, let us define the input capacitance for a
5 V to 3.3 V conversion at 10 A at an ambient temperature
of 60
C. Efficiency of 80% is assumed. Average input
current in the input filter inductor is:
IIN(AVE)
+
(10 A)(3.3 V 5 V)
+
6.6 A
Input capacitor RMS ripple current is then
IIN(RMS)
+
6.62
)
3.3 V
5 V
[(10 A
*
6.6 A)2
*
6.6 A2]
+
4.74 A
If we consider a Rubycon MBZ series capacitor, the ripple
current rating for a 6.3 V, 1800 nF capacitor is 2000 mA at
100 kHz and 105
C. We determine the number of input
capacitors by dividing the ripple current by the
per-capacitor current rating:
Number of capacitors
+
4.74 A 2.0 A
+
2.3
A total of at least 3 capacitors in parallel must be used to
meet the input capacitor ripple current requirements.
Output Switch FETs
Output switch FETs must be chosen carefully, since their
properties vary widely from manufacturer to manufacturer.
The NCP1575 system is designed assuming that n-channel
FETs will be used. The FET characteristics of most concern
are the gate charge/gate-source threshold voltage, gate
capacitance, on-resistance, current rating and the thermal
capability of the package.
The onboard FET driver has a limited drive capability. If
the switch FET has a high gate charge, the amount of time
the FET stays in its ohmic region during the turn-on and
turn-off transitions is larger than that of a low gate charge
FET, with the result that the high gate charge FET will
consume more power. Similarly, a low on-resistance FET
will dissipate less power than will a higher on-resistance
FET at a given current. Thus, low gate charge and low
R
DS(ON)
will result in higher efficiency and will reduce
generated heat.
It can be advantageous to use multiple switch FETs to
reduce power consumption. By placing a number of FETs in
parallel, the effective R
DS(ON)
is reduced, thus reducing the
ohmic power loss. However, placing FETs in parallel
increases the gate capacitance so that switching losses
increase. As long as adding another parallel FET reduces the
ohmic power loss more than the switching losses increase,
there is some advantage to doing so. However, at some point
the law of diminishing returns will take hold, and a marginal
increase in efficiency may not be worth the board area
required to add the extra FET. Additionally, as more FETs
are used, the limited drive capability of the FET driver will
have to charge a larger gate capacitance, resulting in
increased gate voltage rise and fall times. This will affect the
amount of time the FET operates in its ohmic region and will
increase power dissipation.
The following equations can be used to calculate power
dissipation in the switch FETs.
For ohmic power losses due to R
DS(ON)
:
PON(TOP)
+
(RDS(ON)(TOP))(IRMS(TOP))2
(number of topside FETs)
PON(BOTTOM)
+
RDS(ON)(BOTTOM) IRMS(BOTTOM) 2
number of bottom-side FETs
Note that R
DS(ON)
increases with temperature. It is good
practice to use the value of R
DS(ON)
at the FET's maximum
junction temperature in the calculations shown above.
IRMS(TOP)
+
I
2
PK
*
(IPK)(IRIPPLE)
)
D
3
I
2
RIPPLE
IRMS(BOTTOM)
+
I
2
PK
*
(IPKIRIPPLE)
)
(1
*
D)
3
I
2
RIPPLE
IRIPPLE
+
(VIN
*
VOUT)(VOUT)
(fOSC)(L)(VIN)
IPEAK
+
ILOAD
)
IRIPPLE
2
+
IOUT
3
)
IRIPPLE
2
where:
D = Duty cycle.
For switching power losses:
PD
+
nCV2(fOSC)
where:
n = number of switch FETs (either top or bottom),
C = FET gate capacitance,
V = maximum gate drive voltage (usually V
CC
),
f
OSC
= switching frequency.
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15
Layout Considerations
1. The fast response time of V
2
technology increases
the IC's sensitivity to noise on the V
FB
line.
Fortunately, a simple RC filter, formed by the
feedback network and a small capacitor (100 pF
works well) placed between V
FB
and GND filters
out most noise and provides a system practically
immune to jitter. This capacitor should be located
as close as possible to the IC.
2. The COMP capacitor should be connected via its
own path to the IC ground. The COMP capacitor
is sensitive to the intermittent ground drops caused
by switching currents. A separate ground path will
reduce the potential for jitter.
3. The V
CC
bypass capacitor (0.1
mF or greater)
should be located as close as possible to the IC.
This capacitor's connection to GND must be as
short as possible. A 10
W resistor should be placed
close to the V
CC
pin.
4. The IC should not be placed in the path of
switching currents. If a ground plane is used, care
should be taken by the designer to ensure that the
IC is not located over a ground or other current
return path.
NCP1575
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16
PACKAGE DIMENSIONS
SOIC-8
D SUFFIX
CASE 751-07
ISSUE AC
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SEATING
PLANE
1
4
5
8
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN
MAX
MIN
MAX
INCHES
4.80
5.00
0.189
0.197
MILLIMETERS
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.053
0.069
D
0.33
0.51
0.013
0.020
G
1.27 BSC
0.050 BSC
H
0.10
0.25
0.004
0.010
J
0.19
0.25
0.007
0.010
K
0.40
1.27
0.016
0.050
M
0
8
0
8
N
0.25
0.50
0.010
0.020
S
5.80
6.20
0.228
0.244
-X-
-Y-
G
M
Y
M
0.25 (0.010)
-Z-
Y
M
0.25 (0.010)
Z
S
X
S
M
_
_
_
_
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
mm
inches
SCALE 6:1
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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NCP1575/D
V
2
is a trademark of Switch Power, Inc.
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