Semiconductor Components Industries, LLC, 2004
October, 2004 - Rev. 7
1
Publication Order Number:
MC34152/D
MC34152, MC33152,
NCV33152
High Speed Dual
MOSFET Drivers
The MC34152/MC33152 are dual noninverting high speed drivers
specifically designed for applications that require low current digital
signals to drive large capacitive loads with high slew rates. These
devices feature low input current making them CMOS/LSTTL logic
compatible, input hysteresis for fast output switching that is
independent of input transition time, and two high current totem pole
outputs ideally suited for driving power MOSFETs. Also included is
an undervoltage lockout with hysteresis to prevent system erratic
operation at low supply voltages.
Typical applications include switching power supplies, dc-to-dc
converters, capacitor charge pump voltage doublers/inverters, and
motor controllers.
This device is available in dual-in-line and surface mount packages.
Features
Pb-Free Packages are Available
Two Independent Channels with 1.5 A Totem Pole Outputs
Output Rise and Fall Times of 15 ns with 1000 pF Load
CMOS/LSTTL Compatible Inputs with Hysteresis
Undervoltage Lockout with Hysteresis
Low Standby Current
Efficient High Frequency Operation
Enhanced System Performance with Common Switching Regulator
Control ICs
NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
Figure 1. Representative Diagram
-
+
2
4
V
CC
6
5.7V
Drive Output A
7
100k
Drive Output B
5
100k
GND
3
Logic
Input A
Logic
Input B
PDIP-8
P SUFFIX
CASE 626
MARKING
DIAGRAMS
1
8
1
8
MC3x152P
AWL
YYWW
SOIC-8
D SUFFIX
CASE 751
1
8
x
= 3 or 4
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
PIN CONNECTIONS
1
8 N.C.
N.C.
(Top View)
2
7 Drive Output A
Logic Input A
3
6 V
CC
GND
4
5 Drive Output B
Logic Input B
3x152
ALYW
1
8
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
MC34152, MC33152, NCV33152
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Power Supply Voltage
V
CC
20
V
Logic Inputs (Note 1)
V
in
-0.3 to +V
CC
V
Drive Outputs (Note 2)
Totem Pole Sink or Source Current
Diode Clamp Current (Drive Output to V
CC
)
I
O
I
O(clamp)
1.5
1.0
A
Power Dissipation and Thermal Characteristics
D Suffix, Plastic Package Case 751
Maximum Power Dissipation @ T
A
= 50
C
Thermal Resistance, Junction-to-Air
P Suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
= 50
C
Thermal Resistance, Junction-to-Air
P
D
R
q
JA
P
D
R
q
JA
0.56
180
1.0
100
W
C/W
W
C/W
Operating Junction Temperature
T
J
+150
C
Operating Ambient Temperature
MC34152
Operating Ambient Temperature
MC33152
Operating Ambient Temperature
MC33152V, NCV33152
T
A
0 to +70
-40 to +85
-40 to +125
C
Storage Temperature Range
T
stg
-65 to +150
C
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
ESD
2000
200
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V
CC
, whichever is less.
2. Maximum package power dissipation limits must be observed.
ORDERING INFORMATION
Device
Package
Shipping
MC34152D
SOIC-8
98 Units / Rail
MC34152DG
SOIC-8
(Pb-Free)
98 Units / Rail
MC34152DR2
SOIC-8
2500 Tape & Reel
MC34152DR2G
SOIC-8
(Pb-Free)
2500 Tape & Reel
MC34152P
PDIP-8
50 Units / Rail
MC33152D
SOIC-8
98 Units / Rail
MC33152DR2
SOIC-8
2500 Tape & Reel
MC33152P
PDIP-8
50 Units / Rail
MC33152PG
PDIP-8
(Pb-Free)
50 Units / Rail
MC33152VDR2
SOIC-8
2500 Tape & Reel
NCV33152DR2*
SOIC-8
2500 Tape & Reel
NCV33152DR2G*
SOIC-8
(Pb-Free)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NCV prefix is for automotive and other applications requiring site and change control.
MC34152, MC33152, NCV33152
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(V
CC
= 12 V, for typical values T
A
= 25
C, for min/max values T
A
is the operating ambient
temperature range that applies [Note 3], unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
LOGIC INPUTS
Input Threshold Voltage
Output Transition High-to-Low State
Output Transition Low-to-High State
V
IH
V
IL
-
0.8
1.75
1.58
2.6
-
V
Input Current
High State (V
IH
= 2.6 V)
Low State (V
IL
= 0.8 V)
I
IH
I
IL
-
-
100
20
300
100
m
A
DRIVE OUTPUT
Output Voltage
Low State (I
sink
= 10 mA)
Low State
(I
sink
= 50 mA)
Low State
(I
sink
= 400 mA)
High State (I
source
= 10 mA)
High State
(I
source
= 50 mA)
High State
(I
source
= 400 mA)
V
OL
V
OH
-
-
-
10.5
10.4
10
0.8
1.1
1.8
11.2
11.1
10.8
1.2
1.5
2.5
-
-
-
V
Output Pull-Down Resistor
R
PD
-
100
-
k
W
SWITCHING CHARACTERISTICS (T
A
= 25
C)
Propagation Delay (C
L
= 1.0 nF)
Logic Input to:
Drive Output Rise (10% Input to 10% Output)
Drive Output Fall (90% Input to 90% Output)
t
PLH (IN/OUT)
t
PHL (IN/OUT)
-
-
55
40
120
120
ns
Drive Output Rise Time (10% to 90%)
C
L
= 1.0 nF
Drive Output Rise Time (10% to 90%)
C
L
= 2.5 nF
t
r
-
-
14
36
30
-
ns
Drive Output Fall Time (90% to 10%)
C
L
= 1.0 nF
Drive Output Fall Time (90% to 10%)
C
L
= 2.5 nF
t
f
-
-
15
32
30
-
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C
L
= 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
I
CC
-
-
6.0
10.5
8.0
15
mA
Operating Voltage
V
CC
6.5
-
18
V
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
T
low
= 0
C for MC34152, -40
C for MC33152, -40
C for MC33152V
T
high
= +70
C for MC34152, +85
C for MC33152, +125
C for MC33152V
NCV33152: T
low
= -40
C, T
high
= +125
C. Guaranteed by design.
MC34152, MC33152, NCV33152
http://onsemi.com
4
Figure 2. Switching Characteristics Test CIrcuit
Figure 3. Switching Waveform Definitions
50
-
+
0.1
4.7
C
L
Logic Input
Drive Output
7
5
100k
100k
5.7V
+
2
4
6
+
3
5 V
0 V
10%
90%
90%
10%
t
r
t
f
t
PLH
t
PHL
Logic Input
t
r
, t
f
10 ns
Drive Output
12V
Figure 4. Logic Input Current versus Input Voltage
Figure 5. Logic Input Threshold Voltage
versus Temperature
V
in
, INPUT VOLTAGE (V)
T
A
, AMBIENT TEMPERATURE (
C)
0
2.0
4.0
6.0
8.0
10
12
2.4
2.0
1.6
1.2
0.8
0.4
0
I in
, INPUT CURRENT (mA)
V
th
, INPUT THRESHOLD VOL
T
AGE (V)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
-55
-25
0
25
50
75
100
125
Upper Threshold
Low State Output
V
CC
= 12 V
V
CC
= 12 V
T
A
= 25
C
Figure 6. Drive Output High to Low Propagation
Delay versus Logic Input Overdrive Voltage
Figure 7. Drive Output Low to High Propagation
Delay versus Logic Input Overdrive Voltage
200
160
120
80
40
0
t PLH(In/Out)
, DRIVE OUTPUT PROP
AGA
TION DELA
Y (ns)
-1.6
-1.2
-0.8
-0.4
0
V
in
, INPUT OVERDRIVE VOLTAGE BELOW LOWER THRESHOLD (V)
t PHL(In/Out)
, DRIVE OUTPUT PROP
AGA
TION DELA
Y (ns)
200
160
120
80
40
0
0
V
in
, INPUT OVERDRIVE VOLTAGE ABOVE UPPER THRESHOLD (V)
1
2
3
4
V
CC
= 12 V
C
L
= 1.0 nF
T
A
= 25
C
Overdrive Voltage is with Respect
to the Logic Input Upper Threshold
V
CC
= 12 V
C
L
= 1.0 nF
T
A
= 25
C
Overdrive Voltage is with Respect
to the Logic Input Lower Threshold
Lower Threshold
High State Output
V
th(upper)
V
th(lower)
MC34152, MC33152, NCV33152
http://onsemi.com
5
sat
V
, OUTPUT SA
TURA
TION VOL
T
AGE (V)
Figure 8. Propagation Delay
Figure 9. Drive Output Clamp Voltage
versus Clamp Current
50 ns/DIV
3.0
2.0
1.0
0
0
-1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
O
, OUTPUT CLAMP CURRENT (A)
clamp
V
V
CC
GND
High State Clamp (Drive
Output Driven Above V
CC
)
120 Hz Rate
T
A
= 25
C
V
CC
= 12 V
80
ms Pulsed Load
Low State Clamp (Drive
Output Driven Below Ground)
1.9
Figure 10. Drive Output Saturation Voltage
versus Load Current
Figure 11. Drive Output Saturation Voltage
versus Temperature
0
-1.0
-2.0
-3.0
3.0
2.0
1.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
O
, OUTPUT CLAMP CURRENT (A)
V
CC
GND
Source Saturation
(Load to Ground)
Sink Saturation
(Load to V
CC
)
0
-0.5
-0.7
-0.9
-1.1
1.7
1.5
1.0
0.8
0.6
0
-55
-25
0
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (
C)
Source Saturation
(Load to Ground)
sat
V
I
sink
= 400 mA
Sink Saturation
(Load to V
CC
)
I
source
= 10 mA
I
source
= 400 mA
V
CC
GND
I
sink
= 10 mA
V
CC
= 12 V
120 Hz Rate
T
A
= 25
C
V
CC
= 12 V
80
ms Pulsed Load
Figure 12. Drive Output Rise Time
Figure 13. Drive Output Fall Time
10 ns/DIV
10 ns/DIV
90% -
10% -
90% -
10% -
90% -
10% -
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25
C
Drive Output
Logic Input
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25
C
V
CC
= 12 V
V
in
= 0 V to 5.0 V
C
L
= 1.0 nF
T
A
= 25
C
, OUTPUT CLAMP VOL
T
AGE (V)
, OUTPUT SA
TURA
TION VOL
T
AGE (V)
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