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Электронный компонент: NCV7356D2

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Semiconductor Components Industries, LLC, 2005
March, 2005 - Rev. P7
1
Publication Order Number:
NCV7356/D
NCV7356
Advance Information
Single Wire CAN Transceiver
The NCV7356 is a physical layer device for a single wire data link
capable of operating with various Carrier Sense Multiple Access
with Collision Resolution (CSMA/CR) protocols such as the Bosch
Controller Area Network (CAN) version 2.0. This serial data link
network is intended for use in applications where high data rate is not
required and a lower data rate can achieve cost reductions in both the
physical media components and in the microprocessor and/or
dedicated logic devices which use the network.
The network shall be able to operate in either the normal data rate
mode or a high-speed data download mode for assembly line and
service data transfer operations. The high-speed mode is only
intended to be operational when the bus is attached to an off-board
service node. This node shall provide temporary bus electrical loads
which facilitate higher speed operation. Such temporary loads should
be removed when not performing download operations.
The bit rate for normal communications is typically 33 kbit/s, for
high-speed transmissions like described above a typical bit rate of
83 kbit/s is recommended. The NCV7356 is designed in accordance
to the Single Wire CAN Physical Layer Specification GMW3089
V2.4 and supports many additional features like undervoltage
lockout, timeout for faulty blocked input signals, output blanking
time in case of bus ringing and a very low sleep mode current.
Features
Fully Compatible with J2411 Single Wire CAN Specification
60
mA (max) Sleep Mode Current
Operating Voltage Range 5.0 to 27 V
Up to 100 kbps High-Speed Transmission Mode
Up to 40 kbps Bus Speed
Selective BUS Wake-Up
Logic Inputs Compatible with 3.3 V and 5 V Supply Systems
Control Pin for External Voltage Regulators (14 Pin Package Only)
Standby to Sleep Mode Timeout
Low RFI Due to Output Wave Shaping
Fully Integrated Receiver Filter
Bus Terminals Short-Circuit and Transient Proof
Loss of Ground Protection
Protection Against Load Dump, Jump Start
Thermal Overload and Short Circuit Protection
ESD Protection of 4.0 kV on CAN Pin (2.0 kV on Any Other Pin)
Undervoltage Lock Out
Bus Dominant Timeout Feature
NCV Prefix for Automotive and Other Applications Requiring Site
and Change Control
Pb-Free Package is Available
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
SOIC-14
D SUFFIX
CASE 751A
1
14
PIN CONNECTIONS
Device
Package
Shipping
ORDERING INFORMATION
NCV7356D1G
SOIC-8
98 Units / Rail
http://onsemi.com
MARKING DIAGRAMS
NCV7356
AWLYWW
1
14
14
(Top View)
TxD
MODE1
NC
CANH
MODE0
RxD
V
BAT
LOAD
1
13
2
12
3
11
4
10
5
9
6
8
7
GND
GND
NC
INH
GND
GND
NCV7356D1RG
SOIC-8
2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV7356D2
SOIC-14
55 Units / Rail
NCV7356D2R2
SOIC-14
2500 Tape & Reel
SOIC-8
D SUFFIX
CASE 751
1
8
V7356
ALYW
G
1
8
A
= Assembly Location
WL, L
= Wafer Lot
YY, Y
= Year
WW, W = Work Week
G
= Pb-Free Package
1
TxD
8 GND
2
MODE0
3
MODE1
4
RxD
7 CANH
6 LOAD
5 V
BAT
(Top View)
NCV7356
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2
Figure 1. 8-Pin Package Block Diagram
V
BAT
NCV7356
5 V Supply
and
References
Biasing and
V
BAT
Monitor
RC-Osc
Wave Shaping
Time Out
TxD
MODE
CONTROL
MODE0
MODE1
RxD
Reverse
Current
Protection
CAN Driver
Feedback
Loop
Input Filter
Receive
Comparator
Loss of
Ground
Detection
CANH
LOAD
GND
Reverse
Current
Protection
RxD Blanking
Time Filter
NCV7356
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3
Figure 2. 14-Pin Package Block Diagram
V
BAT
NCV7356
5 V Supply
and
References
Biasing and
V
BAT
Monitor
RC-Osc
Wave Shaping
Time Out
TxD
MODE
CONTROL
MODE0
MODE1
RxD
Reverse
Current
Protection
CAN Driver
Feedback
Loop
Input Filter
Receive
Comparator
Loss of
Ground
Detection
CANH
LOAD
GND
Reverse
Current
Protection
RxD Blanking
Time Filter
INH
NCV7356
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4
PACKAGE PIN DESCRIPTION
SOIC-8
SOIC-14
Symbol
Description
1
2
TxD
Transmit data from microprocessor to CAN.
2
3
MODE0
Operating mode select input 0.
3
4
MODE1
Operating mode select input 1.
4
5
RxD
Receive data from CAN to microprocessor.
5
10
V
BAT
Battery input voltage.
6
11
LOAD
Resistor load (loss of ground detection low side switch).
7
12
CANH
Single wire CAN bus pin.
8
1, 7, 8, 14
GND
Ground
-
6, 13
NC
No Connection (Note 1)
-
9
INH
Control pin for external voltage regulator (high voltage high side switch) (14 pin package only)
1. PWB terminal 13 can be connected to ground which will allow the board to be assembled with either the 8 pin package or the 14 pin package.
NCV7356
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5
Electrical Specification
All voltages are referenced to ground (GND). Positive
currents flow into the IC. The maximum ratings given in
the table below are limiting values that do not lead to a
permanent damage of the device but exceeding any of these
limits may do so. Long term exposure to limiting values
may affect the reliability of the device.
MAXIMUM RATINGS
Rating
Symbol
Condition
Min
Max
Unit
Supply Voltage, Normal Operation
V
BAT
-
-0.3
18
V
Short-Term Supply Voltage, Transient
V
BAT.LD
Load Dump; t < 500 ms
-
40
V
(peak)
Jump Start; t < 1.0 min
-
27
V
Transient Supply Voltage
V
BAT.TR1
ISO 7637/1 Pulse 1 (Note 2)
-50
-
V
Transient Supply Voltage
V
BAT.TR2
ISO 7637/1 Pulses 2 (Note 2)
-
100
V
Transient Supply Voltage
V
BAT.TR3
ISO 7637/1 Pulses 3A, 3B
-200
200
V
CANH Voltage
V
CANH
V
BAT
< 27 V
-20
40
V
V
BAT
= 0 V
-40
40
Transient Bus Voltage
V
CANHTR1
ISO 7637/1 Pulse 1 (Note 3)
-50
-
V
Transient Bus Voltage
V
CANHTR2
ISO 7637/1 Pulses 2 (Note 3)
-
100
V
Transient Bus Voltage
V
CANHTR3
ISO 7637/1 Pulses 3A, 3B (Note 3)
-200
200
V
DC Voltage on Pin LOAD
V
LOAD
Via RT > 2.0 k
W
-40
40
V
DC Voltage on Pins TxD, MODE1, MODE0, RxD
V
DC
-
-0.3
7.0
V
ESD Capability of CANH
V
ESDBUS
Human Body Model
Eq. to Discharge 100 pF with 1.5 k
W
-4000
4000
V
ESD Capability of Any Other Pins
V
ESD
Human Body Model
Eq. to Discharge 100 pF with 1.5 k
W
-2000
2000
V
Maximum Latchup Free Current at Any Pin
I
LATCH
-
-500
500
mA
Storage Temperature
T
STG
-
-55
150
C
Junction Temperature
T
J
-
-40
150
C
Lead Temperature Soldering
Reflo
(SMD st les onl )
SOIC-14
T
sld
60 s - 150 s above 183
C
-
240 peak
C
Reflow: (SMD styles only)
SOIC-8
60 s - 150 s above 217
C
-
260 peak
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
2. ISO 7637 test pulses are applied to V
BAT
via a reverse polarity diode and >1.0
m
F blocking capacitor.
3. ISO 7637 test pulses are applied to CANH via a coupling capacitance of 1.0 nF.
4. ESD measured per Q100-002 (EIA/JESD22-A114-A).
TYPICAL THERMAL CHARACTERISTICS
Test Condition, Typical Value
Parameter
Min Pad Board
1
,
Pad Board
Unit
SOIC-8
Junction-to-Lead (psi-JL8,
Y
JL8
)
35 (Note 5)
37 (Note 6)
C/W
Junction-to-Ambient (R
q
JA
,
q
JA
)
172 (Note 5)
115 (Note 6)
C/W
SOIC-14
Junction-to-Lead (psi-JL8,
Y
JL8
)
30 (Note 7)
30 (Note 8)
C/W
Junction-to-Ambient (R
q
JA
,
q
JA
)
122 (Note 7)
84 (Note 8)
C/W
5. 1 oz copper, 53 mm
2
coper area, 0.062
thick FR4.
6. 1 oz copper, 716 mm
2
coper area, 0.062
thick FR4.
7. 1 oz copper, 94 mm
2
coper area, 0.062
thick FR4.
8. 1 oz copper, 767 mm
2
coper area, 0.062
thick FR4.
NCV7356
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6
ELECTRICAL CHARACTERISTICS
(V
BAT
= 5.0 to 27 V, T
A
= -40 to +125
C, unless otherwise specified.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
GENERAL
Undervoltage Lock Out
V
BATuv
-
3.5
-
4.8
V
Supply Current, Recessive,
All Acti e Modes
I
BATN
V
BAT
= 18 V,
T D Open
Not High Speed Mode
-
5.0
6.0
mA
All Active Modes
TxD Open
High Speed Mode
-
-
8.0
Normal Mode Supply Current,
Dominant
I
BATN
(Note 9)
V
BAT
= 27 V, MODE0 = MODE1 = H,
TxD = L, R
load
= 200
W
-
30
35
mA
High-Speed Mode Supply Current,
Dominant
I
BATN
(Note 9)
V
BAT
= 16 V, MODE0 = H, MODE1 = L,
TxD = L, R
load
= 75
W
-
70
75
mA
Wake-Up Mode Supply Current,
Dominant
I
BATW
(Note 9)
V
BAT
= 27 V, MODE0 = L, MODE1 = H,
TxD = L, R
load
= 200
W
-
60
75
mA
Sleep Mode Supply Current
I
BATS
V
BAT
= 18 V, TxD, RxD, MODE0,
MODE1 Open
-
30
60
m
A
Thermal Shutdown (Note 9)
T
SD
-
155
-
180
C
Thermal Recovery (Note 9)
T
REC
-
126
-
150
C
CANH
Bus Output Voltage
V
oh
R
L
> 200
W
, Normal Mode
6.0 V < V
BAT
< 27 V
4.4
-
5.1
V
Bus Output Voltage
Low Battery
V
oh
R
L
> 200
W
, Normal High-Speed Mode
5.0 V < V
BAT
< 6.0 V
3.4
-
5.1
V
Bus Output Voltage
High-Speed Mode
V
oh
R
L
> 75
W
, High-Speed Mode
8.0 V < V
BAT
< 16 V
4.2
-
5.1
V
Fixed Wake-Up
Output High Voltage
V
ohWuFix
Wake-Up Mode, R
L
> 200
W
,
11.4 V < V
BAT
< 27 V
9.9
-
12.5
V
Offset Wake-Up
Output High Voltage
V
ohWuOffset
Wake-Up Mode, R
L
> 200
W
,
5.0 V < V
BAT
< 11.4 V
V
BAT
1.5
-
V
BAT
V
Recessive State
Output Voltage
V
ol
Recessive State or Sleep Mode,
R
load
= 6.5 k
W
-0.20
-
0.20
V
Bus Short Circuit Current
-I
CAN_SHORT
V
CANH
= 0 V, V
BAT
= 27 V, TxD = 0 V
50
-
350
mA
Bus Leakage Current
During Loss of Ground
I
LKN_CAN
(Note 10)
Loss of Ground, V
CANH
= 0 V
-50
-
10
m
A
Bus Leakage Current, Bus Positive
I
LKP_CAN
TxD High
-10
-
10
m
A
Bus Input Threshold
V
ih
Normal, High-Speed Mode,
6.0
v
V
BAT
v
27 V
2.0
2.1
2.2
V
Bus Input Threshold Low Battery
V
ihlb
Normal, V
BAT
= 5.0 V to 6.0 V
1.6
1.7
2.2
V
Fixed Wake-Up
Input High Voltage Threshold
V
ihWuFix
(Note 9)
Sleep Mode, V
BAT
> 10.9 V
6.6
-
7.9
V
Offset Wake-Up
Input High Voltage Threshold
V
ihWuOffset
(Note 9)
Sleep Mode
V
BAT
-4.3
-
V
BAT
-3.25
V
LOAD
Voltage on Switched Ground Pin
V
LOAD_1mA
I
LOAD
= 1.0 mA
-
-
0.1
V
Voltage on Switched Ground Pin
V
LOAD
I
LOAD
= 5.0 mA
-
-
0.5
V
Voltage on Switched Ground Pin
V
LOAD_LOB
I
LOAD
= 7.0 mA, V
BAT
= 0 V
-
-
1.0
V
Load Resistance During Loss of
Battery
R
LOAD_LOB
V
BAT
= 0
R
LOAD
-10%
-
R
LOAD
+35%
W
9. Thresholds not tested in production, guaranteed by design.
10. Leakage current in case of loss of ground is the summary of both currents I
LKN_CAN
and
I
LKN_LOAD
.
NCV7356
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7
ELECTRICAL CHARACTERISTICS
(continued) (V
BAT
= 5.0 to 27 V, T
A
= -40 to +125
C, unless otherwise specified.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
TXD, MODE0, MODE1
High Level Input Voltage
V
ih
5.0 < V
BAT
< 27 V
2.0
-
-
V
Low Level Input Voltage
V
il
5.0 < V
BAT
< 27 V
-
-
0.8
V
TxD Pullup Current
-I
IL_TXD
TxD = L, MODE0 and 1 = H
5.0 < V
BAT
< 27 V
10
-
50
m
A
MODE0 and 1 Pulldown Resistor
R
MODE_pd
10
-
50
k
W
RXD
Low Level Output Voltage
V
ol_rxd
I
RxD
= 2.0 mA
-
-
0.4
V
High Level Output Leakage
I
ih_rxd
V
RxD
= 5.0 V
-10
-
10
m
A
RxD Output Current
Irxd
V
RxD
= 5.0 V
-
-
70
mA
INH (14 Pin Package Only)
High Level Output Voltage
V
oh_INH
I
INH
= -180
m
A
V
BAT
-0.8
V
BAT
-0.5
V
BAT
V
Leakage Current
I
INH_lk
MODE0 = MODE1 = L, INH = 0 V
-5.0
-
5.0
m
A
NCV7356
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8
TIMING MEASUREMENT LOAD CONDITIONS
Normal and High Voltage Wake-Up Mode
High-Speed Mode
min load / min tau
3.3 kohm / 540 pF
Additional 140 ohm tool resistance
to ground in parallel
min load / max tau
3.3 kohm / 1.2 nF
to ground in parallel
max load / min tau
200 ohm / 5.0 nF
Additional 120 ohm tool resistance
to ground in parallel
max load / max tau
200 ohm / 20 nF
to ground in parallel
ELECTRICAL CHARACTERISTICS
(5.0 V
V
BAT
27 V, -40
C
T
A
125
C, unless otherwise specified.)
AC CHARACTERISTICS (See Figures 3, 4, and 5)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
Transmit Delay in Normal and Wake-Up
Mode, Bus Rising Edge (Note 11)
t
Tr
Min and Max Loads per Timing
Measurement Load Conditions
2.0
-
6.3
m
s
Transmit Delay in Wake-Up Mode to V
ihWU
,
Bus Rising Edge (Note 12)
t
TWUr
Min and Max Loads per Timing
Measurement Load Conditions
2.0
-
18
m
s
Transmit Delay in Normal Mode,
Bus Falling Edge (Note 13)
t
Tf
Min and Max Loads per Timing
Measurement Load Conditions
1.8
-
10
m
s
Transmit Delay in Wake-Up Mode,
Bus Falling Edge (Note 13)
t
TWU1f
Min and Max Loads per Timing
Measurement Load Conditions
3.0
-
13.7
m
s
Transmit Delay in High-Speed Mode,
Bus Rising Edge (Note 14)
t
THSr
Min and Max Loads per Timing
Measurement Load Conditions
0.1
-
1.5
m
s
Transmit Delay in High-Speed Mode,
Bus Falling Edge (Note 15)
t
THSf
Min and Max Loads per Timing
Measurement Load Conditions
0.04
-
3.0
m
s
Receive Delay, All Active Modes (Note 16)
t
DR
CANH High to Low Transition
0.3
-
1.0
m
s
Receive Delay, All Active Modes (Note 16)
t
RD
CANH Low to High Transition
0.3
-
1.0
m
s
Input Minimum Pulse Length,
All Active Modes (Note 16)
t
mpDR
t
mpRD
CANH High to Low Transition
CANH Low to High Transition
0.15
0.15
-
-
1.0
1.0
m
s
Wake-Up Filter Time Delay
t
WUF
See Figure 4
10
-
70
m
s
Receive Blanking Time
After
TxD L-H
Transition
t
rb
See Figure 5
0.5
-
6.0
m
s
TxD Timeout Reaction Time
t
tout
Normal and High-Speed Mode
-
17
-
ms
TxD Timeout Reaction Time
t
toutwu
Wake-Up Mode
-
17
-
ms
Delay from Normal to High-Speed and
High Voltage Wake-Up Mode
t
dnhs
-
-
-
30
ms
Delay from High-Speed and High Voltage
Wake-Up to Normal Mode
t
dhsn
-
-
-
30
ms
Delay from Normal to Standby Mode
t
dsby
V
BAT
= 6.0 V to 27 V
-
-
500
m
s
Delay from Sleep to Normal Mode
t
dsnwu
V
BAT
= 6.0 V to 27 V
-
-
50
ms
Delay from Standby to Sleep Mode (Note 17)
t
dsleep
V
BAT
= 6.0 V to 27 V
100
250
500
ms
11. The maximum signal delay time for a bus rising edge is measured from V
cmos_il
on the TxD input pin to the V
ihMax
+ V
goff
max level on CANH
at maximum network time constant, minimum signal delay time for a bus rising edge is measured from V
cmos_ih
on the TxD input pin to 1 V
on CANH at minimum network time constant. These definitions are valid in both normal and High Voltage Wake-Up (HVWU) mode.
12. The maximum signal delay time for a bus rising edge in HVWU mode is measured from V
cmos_il
on the TxD input pin to the V
ihWuMax
+ V
goff
max level on CANH at maximum network time constant, minimum signal delay time for a bus rising edge is measured from V
cmos_ih
on the
TxD input pin to 1 V on CANH at minimum network time constant.
13. Maximum signal delay time for a bus falling edge is measured from V
cmos_ih
on the TxD input pin to 1 V on CANH at maximum network time
constant, minimum signal delay time for a bus falling edge is measured from V
cmos_ih
on the TxD input pin to the V
ihMax
+ V
goff
max level on
CANH. These definitions are valid in both normal and HVWU mode.
14. The signal delay time in high-speed mode for a bus rising edge is measured from V
cmos_il
on the TxD input pin to the V
ihMax
+ V
goff
max level
on CANH at maximum high-speed network time constant.
15. The signal delay time in high-speed mode for a bus falling edge is measured from V
cmos_ih
on the TxD input pin to 1 V on CANH at maximum
high-speed network time constant.
16. Receive delay time is measured from the rising / falling edge crossing of the nominal V
ih
value on CANH to the falling (V
cmos_il_max
) / rising
(V
cmos_ih_min
) edge of RxD. This parameter is tested by applying a square wave signal to CANH. The minimum slew rate for the bus rising
and falling edges is 50 V/
m
s. The low level on bus is always 0 V. For normal mode and high-speed mode testing the high level on bus is 4 V.
For HVWU mode testing the high level on bus is V
BAT
- 2 V.
17. Tested on 14 Pin package only.
NCV7356
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9
BUS LOADING REQUIREMENTS
Characteristic
Symbol
Min
Typ
Max
Unit
Number of System Nodes
-
2
-
32
-
Network Distance Between Any Two ECU Nodes
Bus Length
-
-
60
m
Node Series Inductor Resistance (If required)
R
ind
-
-
3.5
W
Ground Offset Voltage
V
goff
-
-
1.5
V
Ground Offset Voltage, Low Battery
V
gofflowbat
-
0.1 x V
BAT
0.7
V
Device Capacitance (Unit Load)
C
ul
135
150
300
pF
Network Total Capacitance
C
tl
396
-
19000
pF
Device Resistance (Unit Load)
R
ul
6435
6490
6565
W
Device Resistance (Min Load)
R
min
2000
-
-
W
Network Total Resistance
R
tl
200
-
4596
W
Network Time Constant (Note 18)
t
1.0
-
4.0
m
s
Network Time Constant in High-Speed Mode
t
-
-
1.5
m
s
High-Speed Mode Network Resistance to GND
R
load
75
-
135
W
18. The network time constant incorporates the bus wiring capacitance. The minimum value is selected to limit radiated emission. The maximum
value is selected to ensure proper communication modes. Not all combinations of R and C are possible.
TIMING DIAGRAMS
Figure 3. Input/Output Timing
V
ih
max + V
goff
max
t
T
V
CANH
V
RxD
1 V
50%
V
TxD
50%
t
t
t
t
R
t
F
t
D
t
DR
NCV7356
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10
TIMING DIAGRAMS
Figure 4. Wake-Up Filter Time Delay
V
CANH
V
RxD
t
t
t
WU
t
WUF
t
WU
t
WU
< t
WUF
V
ih
+ V
goff
wake-up
interrupt
Figure 5. Receive Blanking Time
V
ih
V
CANH
V
RxD
50%
V
TxD
50%
t
t
t
t
RB
NCV7356
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11
FUNCTIONAL DESCRIPTION
TxD Input Pin
TxD Polarity
TxD = logic 1 (or floating) on this pin produces an
undriven or recessive bus state (low bus voltage)
TxD = logic 0 on this pin produces either a bus normal
or a bus high voltage dominant state depending on the
transceiver mode state (high bus voltage)
If the TxD pin is driven to a logic low state while the sleep
mode (Mode 0 = 0 and Mode 1 = 0) is activated, the
transceiver can not drive the CANH pin to the dominant
state.
The transceiver provides an internal pullup current on the
TxD pin which will cause the transmitter to default to the
bus recessive state when TxD is not driven.
TxD input signals are standard CMOS logic levels.
Timeout Feature
In case of a faulty blocked dominant TxD input signal,
the CANH output is switched off automatically after the
specified TxD timeout reaction time to prevent a dominant
bus.
The transmission is continued by next TxD L to H
transition without delay.
MODE0 and MODE1 Pins
The transceiver provides a weak internal pulldown
current on each of these pins which causes the transceiver
to default to sleep mode when they are not driven. The
mode input signals are standard CMOS logic level for
3.3 V and 5 V supply voltages.
MODE0
MODE1
Mode
L
L
Sleep Mode
H
L
High-Speed Mode
L
H
High Voltage Wake-Up
H
H
Normal Mode
Sleep Mode
Transceiver is in low power state, waiting for wake-up
via high voltage signal or by mode pins change to any state
other than 0,0. In this state, the CANH pin is not in the
dominant state regardless of the state of the TxD pin.
High-Speed Mode
This mode allows high-speed download with bit rates up
to 100 Kbit/s. The output wave shapingaping circuit is
disabled in this mode. Bus transmitter drive circuits for
those nodes which are required to communicate in
high-speed mode are able to drive reduced bus resistance
in this mode.
High Voltage Wake-Up Mode
This bus includes a selective node awake capability,
which allows normal communication to take place among
some nodes while leaving the other nodes in an undisturbed
sleep state. This is accomplished by controlling the signal
voltages such that all nodes must wake-up when they
receive a higher voltage message signal waveform. The
communication system communicates to the nodes
information as to which nodes are to stay operational
(awake) and which nodes are to put themselves into a non
communicating low power "sleep" state. Communication
at the lower, normal voltage levels shall not disturb the
sleeping nodes.
Normal Mode
Transmission bit rate in normal communication is
33 Kbits/s. In normal transmission mode the NCV7356
supports controlled waveform rise and overshoot times.
Waveform trailing edge control is required to assure that
high frequency components are minimized at the
beginning of the downward voltage slope. The remaining
fall time occurs after the bus is inactive with drivers off and
is determined by the RC time constant of the total bus load.
RxD Output Pin
Logic data as sensed on the single wire CAN bus.
RxD Polarity
RxD = logic 1 on this pin indicates a bus recessive
state (low bus voltage)
RxD = logic 0 on this pin indicates a bus normal or
high voltage bus dominant state
RxD in Sleep Mode
RxD does not pass signals to the microprocessor while in
sleep mode until a valid wake-up bus voltage level is
received or the MODE0 and MODE 1 pins are not 0, 0
respectively. When the valid wake-up bus voltage signal
awakens the transceiver, the RxD pin signals an interrupt
(logic 0). If there is no mode change within 250 ms (typ),
the transceiver re-enters the sleep mode.
When not in sleep mode all valid bus signals will be sent
out on the RxD pin.
RxD will be placed in the undriven or off state when in
sleep mode.
RxD Typical Load
Resistance: 2.7 k
W
Capacitance: < 25 pF
NCV7356
http://onsemi.com
12
Bus LOAD Pin
Resistor ground connection with internal open-on-loss-
of-ground protection
When the ECU experiences a loss of ground condition,
this pin is switched to a high impedance state.
The ground connection through this pin is not interrupted
in any transceiver operating mode including the sleep
mode. The ground connection only is interrupted when
there is a valid loss of ground condition.
This pin provides the bus load resistor with a path to
ground which contributes less than 0.1 V to the bus offset
voltage when sinking the maximum current through one
unit load resistor. This path exists in all operating modes,
including the sleep mode.
The transceiver's maximum bus leakage current
contribution to V
ol
from the LOAD pin when in a loss of
ground state is 50
mA over all operating temperatures and
3.5 < V
BAT
< 27 V.
V
BAT
Input Pin
Vehicle Battery Voltage
The transceiver is fully operational as described in the
Electrical Characteristics Table over the range 6.0 V <
V
BAT
< 18 V as measured between the GND pin and the
V
BAT
pin.
For 5.0 V < V
Bat
< 6.0 V, the bus operates in normal
mode with reduced dominant output voltage and reduced
receiver input voltage. High voltage wake-up is not
possible (dominant output voltage is the same as in normal
or high-speed mode).
The transceiver operates in normal mode when 18 V <
V
Bat
< 27 V at 85
C for one minute.
For 0 < V
BAT
< 4.0 V, the bus is passive (not driven
dominant) and RxD is undriven (high), regardless of the
state of the TxD pin (undervoltage lockout).
CAN BUS
Input/Output Pin
Wave Shaping in Normal and High Voltage Wake-Up
Mode
Wave shaping is incorporated into the transmitter to
minimize EMI radiated emissions. An important
contributor to emissions is the rise and fall times during
output transitions at the "corners" of the voltage waveform.
The resultant waveform is one half of a sin wave of
frequency 50-65 kHz at the rising waveform edge and one
quarter of this sin wave at falling or trailing edge.
Wave Shaping in High-Speed Mode
Wave shaping control of the rising and falling waveform
edges are disabled during high-speed mode. EMI
emissions requirements are waived during this mode. The
waveform rise time in this mode is less than 1.0
ms.
Short Circuits
If the CAN BUS pin is shorted to ground for any duration
of time, the current is limited as specified in the Electrical
Characteristics Table until an overtemperature shutdown
circuit disables the output high side drive source transistor
preventing damage to the IC.
Loss of Ground
In case of a valid loss of ground condition, the LOAD pin
is switched into high impedance state. The CANH
transmission is continued until the undervoltage lock out
voltage threshold is detected.
Loss of Battery
In case of loss of battery (V
BAT
= 0 or open) the
transceiver does not disturb bus communication. The
maximum reverse current into the power supply system
(V
BAT
) doesn't exceed 500
mA.
INH Pin (14 pin package only)
The INH pin is a high-voltage highside switch used to
control the ECU's regulated microcontroller power supply.
After power-on, the transceiver automatically enters an
intermediate standby mode, the INH output will go high
(up to V
BAT
) turning on the external voltage regulator. The
external regulator provides power to the ECU. If there is no
mode change within 250 ms (typ), the transceiver re-enters
the sleep mode and the INH output goes to logic 0
(floating).
When the transceiver has detected a valid wake-up
condition (bus HVWU traffic which exceeds the wake-up
filter time delay) the INH output will become high (up to
V
BAT
) again and the same procedure starts as described
after power-on. In case of a mode change into any active
mode, the sleep timer is stopped and INH stays high (up to
V
BAT
). If the transceiver enters the sleep mode, INH goes
to logic 0 (floating) after 250 ms (typ) when no wake-up
signal is present.
NCV7356
http://onsemi.com
13
Figure 6. State Diagram, 8 Pin Package
HVWU Mode
MODE1
high
V
BAT
on
MODE0
low
High-Speed Mode
MODE1
low
MODE0
high
Normal Mode
MODE1
high
MODE0
high
Sleep Mode
CAN
float
(1)
low after HVWU, high after V
BAT
on & V
CCECU
present
wake-up
request
from Bus
after 250 ms
-> no mode change
-> no valid wake-up
MODE0/1 => High
(If V
CC_ECU
on)
MODE0&1 => Low
MODE0/1 => High
V
BAT
standby
RxD
high/low
(1)
MODE0/1
low
CAN
float
MODE0/1
low
NCV7356
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14
Figure 7. State Diagram, 14 Pin Package
HVWU Mode
MODE1
high
V
BAT
on
INH
V
BAT
MODE0
low
High-Speed Mode
MODE1
low
INH
V
BAT
MODE0
high
Normal Mode
MODE1
high
INH
V
BAT
MODE0
high
Sleep Mode
INH/CAN
floating
MODE0/1
low
(1)
low after HVWU, high after V
BAT
on & V
CCECU
present
wake-up
request
from Bus
after 250 ms
-> no mode change
-> no valid wake-up
MODE0/1 => High
(If V
CC_ECU
on)
MODE0&1 => Low
MODE0/1 => High
V
BAT
standby
INH
V
S
RxD
high/low
(1)
MODE0/1
low
CAN
float
NCV7356
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15
Figure 8. Application Circuitry, 8 Pin Package
NCV7356
V
BAT
*
C
A
N
Controller
2.7 k
W
5
4
RxD
2
MODE0
3
MODE1
1
TxD
7
6
LOAD
CANH
6.49 k
W
V
BAT_ECU
100 pF
V
BAT
8
GND
100 pF
47
m
H
ESD Protection -
MMBZ27VCLT1
ECU Connector to
Single Wire CAN Bus
*Recommended capacitance at V
BAT_ECU
> 1.0
m
F (immunity to ISO7637/1 test pulses)
MRA4004T3
1 k
+
+
100 nF
Voltage Regulator
+5 V
V
BAT
NCV7356
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16
Figure 9. Application Circuitry, 14 Pin Package
NCV7356
V
BAT
*
Voltage Regulator
V
BAT
+5 V
CAN Controller
2.7 k
W
10
5
RxD
3
MODE0
4
MODE1
2
TxD
12
11
LOAD
CANH
6.49 k
W
V
BAT_ECU
100 pF
V
BAT
1, 7, 8, 14
Copper Foil
Heatsink
>150 mm
2
GND
100 pF
47
m
H
ESD Protection -
MMBZ27VCLT1
ECU Connector to
Single Wire CAN Bus
*Recommended capacitance at V
BAT_ECU
> 1.0
m
F (immunity to ISO7637/1 test pulses)
MRA4004T3
9
INH
1 k
+
+
100 nF
NCV7356
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17
SOIC-8 Thermal Information
Test Condition, Typical Value
Parameter
Min Pad Board
(Note 19)
1
,
Pad Board
(Note 20)
Unit
Junction-to-Lead (psi-JL8,
Y
JL8
)
35
37
C/W
Junction-to-Ambient (R
q
JA
,
q
JA
)
172
115
C/W
19. 1 oz copper, 53 mm
2
coper area, 0.062
thick FR4.
20. 1 oz copper, 716 mm
2
coper area, 0.062
thick FR4.
Figure 10. Min pad is shown as the red traces.
1 inch pad includes the yellow area. Pin 8 is
connected to flag internally to the package and
externally to the heat spreading area.
Figure 11. Internal construction of the package
simulation.
0
100
200
300
400
500
600
800
2.0 oz. Cu
Figure 12. SOIC-8,
q
JA
as a Function of the Pad Copper Area Including Traces,
Board Material
q
JA
(
C/W)
200
Copper Area (mm
2
)
1.0 oz. Cu
700
180
160
140
120
100
80
NCV7356
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18
Table 1. SOIC-8 Thermal RC Network Models*
54 mm
2
714 mm
2
Copper Area
54 mm
2
714 mm
2
Copper Area
Cauer Network
Foster Network
C's
C's
Units
Tau
Tau
Units
3.13E-05
3.13E-05
W-s/C
1.00E-06
1.00E-06
sec
1.23E-04
1.23E-04
W-s/C
1.00E-05
1.00E-05
sec
3.70E-04
3.70E-04
W-s/C
1.00E-04
1.00E-04
sec
1.28E-03
1.28E-03
W-s/C
0.002
0.003
sec
4.55E-03
4.83E-03
W-s/C
0.038
0.041
sec
1.69E-02
1.75E-02
W-s/C
0.386
0.413
sec
5.86E-02
6.35E-02
W-s/C
2.21
2.29
sec
0.197
0.333
W-s/C
16.24
9.32
sec
1.50
2.81
W-s/C
54.81
68.9
sec
431
W-s/C
94.1
sec
R's
R's
R's
R's
0.041
0.041
C/W
2.44E-02
2.44E-02
C/W
0.093
0.093
C/W
5.28E-02
5.28E-02
C/W
0.263
0.263
C/W
1.67E-01
1.67E-01
C/W
1.868
1.976
C/W
1.0
1.1
C/W
8.332
8.627
C/W
4.7
4.8
C/W
23.944
24.484
C/W
12.9
13.4
C/W
37.864
33.670
C/W
26.2
26.7
C/W
71.762
23.952
C/W
55.6
36.7
C/W
28.053
21.501
C/W
71.4
27.6
C/W
0.212
C/W
4.2
C/W
*Bold face items in the Cauer network above, represent the package without the external thermal system. The Bold face items in the Foster network
are computed by the square root of time constant R(t) = 24.4 * sqrt(time(sec)). The constant is derived based on the active area of the device
with silicon and epoxy at the interface of the heat generation.
The Cauer networks generally have physical
significance and may be divided between nodes to separate
thermal behavior due to one portion of the network from
another. The Foster networks, though when sorted by time
constant (as above) bear a rough correlation with the Cauer
networks, are really only convenient mathematical models.
Both Foster and Cauer networks can be easily implemented
using circuit simulating tools, whereas Foster networks
may be more easily implemented using mathematical tools
(for instance, in a spreadsheet program), according to the
following formula:
R(t)
+
n
S
i
+
1
Ri 1-e
-t taui
Junction
Ambient
(thermal ground)
R
1
R
2
C
1
C
2
C
3
C
n
R
n
R
3
Time constants are
not simple RC products.
Amplitudes of mathematical solution are
not the resistance values.
Figure 13. Grounded Capacitor Thermal Network ("Cauer" Ladder)
Figure 14. Non-Grounded Capacitor Thermal Ladder ("Foster" Ladder)
Junction
Ambient
(thermal ground)
R
1
R
2
C
1
C
2
C
3
C
n
R
n
R
3
Each rung is exactly characterized by its RC-product time constant; Am-
plitudes are the resistances
NCV7356
http://onsemi.com
19
0.01
1
10
100
1000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
Figure 15. SOIC-8 Single Pulse Heating
Cu Area = 53 mm
2
1.0 oz.
Cu Area = 717 mm
2
1.0 oz.
R
q
(
C/W)
0.1
0.20
0.01
1
10
100
1000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
D = 0.50
R
q

(
C/
W
)
0.1
Cu Area = 717 mm
2
1.0 oz.
0.10
0.05
0.01
Figure 16. SOIC-8 Thermal Duty Cycle Curves on 1
,
Spreader Test Board
NCV7356
http://onsemi.com
20
SOIC-14 Thermal Information
Test Condition, Typical Value
Parameter
Min Pad Board
(Note 21)
1
,
Pad Board
(Note 22)
Unit
Junction-to-Lead (psi-JL8,
Y
JL8
)
30
30
C/W
Junction-to-Ambient (R
q
JA
,
q
JA
)
122
84
C/W
21. 1 oz copper, 94 mm
2
coper area, 0.062
thick FR4.
22. 1 oz copper, 767 mm
2
coper area, 0.062
thick FR4.
Figure 17. Internal construction of the package
simulation.
Figure 18. Min pad is shown as the red traces.
1 inch pad includes the yellow area. Pin 1, 7, 8
and 14 are connected to flag internally to the
package and externally to the heat spreading area.
60
70
80
90
100
110
120
130
140
150
0
100
200
300
400
500
600
800
2.0 oz. Cu
q
JA
(
C/W)
Copper Area (mm
2
)
1.0 oz. Cu
700
Figure 19. SOIC-14,
q
JA
as a Function of the Pad Copper Area Including Traces,
Board Material
900
Sim 1.0 oz.
Sim 2.0 oz.
NCV7356
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21
Table 2. SOIC-8 Thermal RC Network Models*
96 mm
2
767 mm
2
Copper Area
96 mm
2
767 mm
2
Copper Area
Cauer Network
Foster Network
C's
C's
Units
Tau
Tau
Units
3.12E-05
3.12E-05
W-s/C
1.00E-06
1.00E-06
sec
1.21E-04
1.21E-04
W-s/C
1.00E-05
1.00E-05
sec
3.53E-04
3.50E-04
W-s/C
1.00E-04
1.00E-04
sec
1.19E-03
1.19E-03
W-s/C
0.028
0.001
sec
4.86E-03
5.05E-03
W-s/C
0.001
0.009
sec
2.17E-02
7.16E-03
W-s/C
0.280
0.047
sec
8.94E-02
3.51E-02
W-s/C
2.016
0.875
sec
0.304
0.262
W-s/C
16.64
7.53
sec
1.71
2.43
W-s/C
59.47
68.4
sec
411
W-s/C
92.221
sec
R's
R's
R's
R's
0.041
0.041
C/W
2.44E-02
2.44E-02
C/W
0.095
0.096
C/W
5.28E-02
5.28E-02
C/W
0.279
0.281
C/W
1.67E-01
1.67E-01
C/W
1.154
0.995
C/W
3.5
0.7
C/W
5.621
6.351
C/W
0.7
0.1
C/W
13.180
1.910
C/W
8.7
5.8
C/W
23.823
21.397
C/W
15.9
16.4
C/W
53.332
27.150
C/W
31.9
27.1
C/W
24.794
25.276
C/W
61.3
29.0
C/W
0.218
C/W
4.3
C/W
*Bold face items in the Cauer network above, represent the package without the external thermal system. The Bold face items in the Foster network
are computed by the square root of time constant R(t) = 24.4 * sqrt(time(sec)). The constant is derived based on the active area of the device
with silicon and epoxy at the interface of the heat generation.
The Cauer networks generally have physical
significance and may be divided between nodes to separate
thermal behavior due to one portion of the network from
another. The Foster networks, though when sorted by time
constant (as above) bear a rough correlation with the Cauer
networks, are really only convenient mathematical models.
Both Foster and Cauer networks can be easily implemented
using circuit simulating tools, whereas Foster networks
may be more easily implemented using mathematical tools
(for instance, in a spreadsheet program), according to the
following formula:
R(t)
+
n
S
i
+
1
Ri 1-e
-t taui
Junction
Ambient
(thermal ground)
R
1
R
2
C
1
C
2
C
3
C
n
R
n
R
3
Time constants are
not simple RC products.
Amplitudes of mathematical solution are
not the resistance values.
Figure 20. Grounded Capacitor Thermal Network ("Cauer" Ladder)
Figure 21. Non-Grounded Capacitor Thermal Ladder ("Foster" Ladder)
Junction
Ambient
(thermal ground)
R
1
R
2
C
1
C
2
C
3
C
n
R
n
R
3
Each rung is exactly characterized by its RC-product time constant; Am-
plitudes are the resistances
NCV7356
http://onsemi.com
22
0.01
1
10
100
1000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Time (s)
Figure 22. SOIC-14 Single Pulse Heating
Cu Area = 96 mm
2
1.0 oz.
Cu Area = 767 mm
2
1.0 oz.
R
q
(
C/W)
0.1
Cu Area = 767 mm
2
1.0 oz. 1S2P
0.20
0.01
1
10
100
1000
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE DURATION (sec)
D = 0.50
R
q

(
C/
W
)
0.1
Cu Area = 717 mm
2
1.0 oz.
0.10
0.05
0.01
Figure 23. SOIC-14 Thermal Duty Cycle Curves on 1
,
Spreader Test Board
NCV7356
http://onsemi.com
23
PACKAGE DIMENSIONS
SOIC-8
D SUFFIX
CASE 751-07
ISSUE AE
SEATING
PLANE
1
4
5
8
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751-01 THRU 751-06 ARE OBSOLETE. NEW
STANDARD IS 751-07.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN
MAX
MIN
MAX
INCHES
4.80
5.00
0.189
0.197
MILLIMETERS
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.053
0.069
D
0.33
0.51
0.013
0.020
G
1.27 BSC
0.050 BSC
H
0.10
0.25
0.004
0.010
J
0.19
0.25
0.007
0.010
K
0.40
1.27
0.016
0.050
M
0
8
0
8
N
0.25
0.50
0.010
0.020
S
5.80
6.20
0.228
0.244
-X-
-Y-
G
M
Y
M
0.25 (0.010)
-Z-
Y
M
0.25 (0.010)
Z
S
X
S
M
_
_
_
_
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
mm
inches
SCALE 6:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NCV7356
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24
PACKAGE DIMENSIONS
SOIC-14
D SUFFIX
CASE 751A-03
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
-A-
-B-
G
P
7 PL
14
8
7
1
M
0.25 (0.010)
B
M
S
B
M
0.25 (0.010)
A
S
T
-T-
F
R
X 45
SEATING
PLANE
D
14 PL
K
C
J
M
_
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
8.55
8.75
0.337
0.344
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25
0.016
0.049
G
1.27 BSC
0.050 BSC
J
0.19
0.25
0.008
0.009
K
0.10
0.25
0.004
0.009
M
0
7
0
7
P
5.80
6.20
0.228
0.244
R
0.25
0.50
0.010
0.019
_
_
_
_
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