Semiconductor Components Industries, LLC, 2003
July, 2003 - Rev. 0
1
Publication Order Number:
NLAS4685/D
NLAS4685
Ultra-Low Resistance
Dual SPDT Analog Switch
The NLAS4685 is an advanced CMOS analog switch fabricated in
Sub-micron silicon gate CMOS technology. The device is a dual
Independent Single Pole Double Throw (SPDT) switch featuring
Ultra-Low R
ON
of 0.8
W, for the Normally Closed (NC) switch and
for the Normally Opened switch (NO) at 2.7 V.
The part also features guaranteed Break Before Make switching,
assuring the switches never short the driver.
The NLAS4685 is available in a 2.0 x 1.5 mm bumped die array,
with a 3 x 4 arrangement of solder bumps. The pitch of the solder
bumps is 0.5 mm for easy handling.
Features
Ultra-Low R
ON
,
t0.8 W at 2.7 V
Threshold Adjusted to Function with 1.8 V Control at
V
CC
= 2.7-3.3 V
Single Supply Operation from 1.8-5.5 V
Tiny 2 x 1.5 mm Bumped Die
Low Crosstalk,
t 81 dB at 100 kHz
Full 0-V
CC
Signal Handling Capability
High Isolation, -65 dB at 100 kHz
Low Standby Current,
t50 nA
Low Distortion,
t0.14% THD
R
ON
Flatness of 0.15
W
Pin for Pin Replacement for MAX4685
Applications
Cell Phone
Speaker Switching
Power Switching (Up to 100 mA)
Modems
Automotive
FUNCTION TABLE
0
1
IN 1, 2
http://onsemi.com
Microbump-10
CASE 489AA
MARKING
DIAGRAM
XX
D
A1
PIN CONNECTIONS
AND LOGIC DIAGRAM
COM1
COM2
NO1
NO2
IN1
IN2
NC1
NC2
NO 1, 2
NC 1, 2
OFF
ON
ON
OFF
C
2
C
3
C
4
C
1
A
2
A
3
A
4
A
1
GND
B
1
B
4
V
CC
A1
XX = Device Code
D
= Date Code
Device
Package
Shipping
ORDERING INFORMATION
NLAS4685
Microbump-10
3000/Tape & Reel
(Top View)
NLAS4685
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage
*
0.5 to
)
7.0
V
V
IS
Analog Input Voltage (V
NO
, V
NC
, or V
COM
) (Note 1)
*
0.5
v
V
IS
v
V
CC
)
0.5
V
V
IN
Digital Select Input Voltage
*
0.5
v
V
I
v)
7.0
V
I
IK
DC Current, Into or Out of Any Pin
$
50
mA
1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum
current rating.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
1.8
5.5
V
V
IN
Digital Select Input Voltage
GND
5.5
V
V
IS
Analog Input Voltage (NC, NO, COM)
GND
V
CC
V
T
A
Operating Temperature Range
*
55
)
125
C
t
r
, t
f
Input Rise or Fall Time, SELECT
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
0
0
100
20
ns/V
DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
V
CC
$
10%
*
55
5
C to 25
5
C
t
85
5
C
t
125
5
C
Unit
V
IH
Minimum High-Level Input
Voltage, Select Inputs
2.0
2.5
3.0
5.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
1.4
1.4
1.4
2.0
V
V
IL
Maximum Low-Level Input
Voltage, Select Inputs
2.0
2.5
3.0
5.0
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
0.5
0.5
0.5
0.8
V
I
IN
Maximum Input Leakage
Current, Select Inputs
V
IN
= 5.5 V or GND
5.5
$
1.0
$
1.0
$
1.0
m
A
I
OFF
Power Off Leakage Current
V
IN
= 5.5 V or GND
0
$
10
$
10
$
10
m
A
I
CC
Maximum Quiescent Supply
Current
Select and V
IS
= V
CC
or GND
5.5
$
50
$
200
$
200
nA
NLAS4685
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3
DC ELECTRICAL CHARACTERISTICS - Analog Section
Guaranteed Maximum Limit
-55
5
C to 25
5
C
t
85
5
C
t
125
5
C
Symbol
Parameter
Condition
V
CC
$
10%
Min
Max
Min
Max
Min
Max
Unit
R
ON
(NC, NO)
"ON" Resistance
(Note 2)
V
IN
w
V
IH
V
IS
= GND to V
CC
I
IN
I
v
100 mA
2.5
3.0
5.0
2.0
0.8
0.8
2.0
0.8
0.8
2.0
1.0
0.9
W
R
FLAT
(NC, NO)
On-Resistance
Flatness (Notes 2, 4)
I
COM
= 100 mA
V
IS
= 0 to V
CC
2.5
3.0
5.0
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
W
R
ON
On-Resistance Match
Between Channels
(Notes 2 and 3)
V
IS
= 1.3 V;
I
COM
= 100 mA
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.8 V;
I
COM
= 100 mA
2.5
3.0
5.0
0.18
0.06
0.06
0.18
0.06
0.06
0.18
0.06
0.06
W
I
NC(OFF)
I
NO(OFF)
NC or NO Off
Leakage Current
(Figure 10)
V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 1.0
V
COM
= 4.5 V
5.5
-1
1
-10
10
-150
150
nA
I
COM(ON)
COM ON
Leakage Current
(Figure 10)
V
IN
= V
IL
or V
IH
V
NO
1.0 V or 4.5 V with
V
NC
floating or
V
NC
1.0 V or 4.5 V with
V
NO
floating
V
COM
= 1.0 V or 4.5 V
5.5
-1
1
-10
10
-150
150
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3.
R
ON =
R
ON(MAX)
- R
ON(MIN)
between all switches.
4. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog
signal ranges.
NLAS4685
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
V
IS
*
55
5
C to 25
5
C
t
85
5
C
t
125
5
C
Symbol
Parameter
Test Conditions
V
CC
(V)
V
IS
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
t
ON
Turn-On Time
R
L
= 50
W,
C
L
= 35 pF
(Figures 2 and 3)
2.5
3.0
5.0
1.3
1.5
2.8
55
50
30
65
60
35
70
60
35
ns
t
OFF
Turn-Off Time
R
L
= 50
W,
C
L
= 35 pF
(Figures 2 and 3)
2.5
3.0
5.0
1.3
1.5
2.8
55
50
25
65
60
30
70
60
30
ns
t
BBM
Minimum Break-Before-Make
Time
V
IS
= 3.0
R
L
= 300
W,
C
L
= 35 pF
(Figure 1)
3.0
1.5
2
15
ns
Typical @ 25, V
CC
= 5.0 V
V
CC
= 3.0 V
C
NC
Off
C
NO
Off
C
NC
On
C
NO
On
NC Off Capacitance, f = 1 MHz
NO Off Capacitance, f = 1 MHz
NC On Capacitance, f = 1 MHz
NO On Capacitance, f = 1 MHz
208
102
547
431
pF
*Typical Characteristics are at 25
C.
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted) (Note 6)
V
CC
Typical
Symbol
Parameter
Condition
V
CC
V
25
5
C
Unit
BW
Maximum On-Channel -3dB
Bandwidth or Minimum Frequency
V
IN
=
0 dBm
NC/NO
V
centered between V
and GND
3.0
11.5
MHz
Bandwidth or Minimum Frequency
Response
V
IN
centered between V
CC
and GND
(Figure 4)
V
ONL
Maximum Feedthrough On Loss
V
IN
=
0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 4)
3.0
-0.05
dB
V
ISO
Off-Channel Isolation
f = 100 kHz; V
IS
=
1 V RMS; C
L
= 5 nF
V
IN
centered between V
CC
and GND(Figure 4)
3.0
-65
dB
Q
Charge Injection Select Input to
Common I/O
V
IN =
V
CC to
GND, R
IS
= 0
W
, C
L
= 1 nF
Q = C
L
-
D
V
OUT
(Figure 5)
3.0
5.0
15
20
pC
THD
Total Harmonic Distortion
THD + Noise
F
IS
= 20 Hz to 20 kHz, R
L
= Rgen = 600
W
, C
L
= 50 pF
V
IS
=
1 V RMS
3.0
0.14
%
VCT
Channel-to-Channel Crosstalk
f = 100 kHz; V
IS
=
1 V RMS,
C
L
= 5 pF, R
L
= 50
W
V
IN
centered between V
CC
and GND (Figure 4)
3.0
-81
dB
5. Off-Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
6. -40
C specifications are guaranteed by design.
NLAS4685
http://onsemi.com
5
Figure 1. t
BBM
(Time Break-Before-Make)
Output
DUT
50
W
35 pF
V
CC
Switch Select Pin
90%
Output
Input
V
CC
GND
90% of V
OH
GND
Figure 2. t
ON
/t
OFF
50%
50%
90%
90%
t
ON
t
OFF
V
OH
Output
Input
V
CC
0 V
Figure 3. t
ON
/t
OFF
DUT
Open
35 pF
V
CC
Input
50%
50%
10%
t
ON
t
OFF
Output
Input
V
CC
0 V
10%
50
W
0.1
m
F
t
BMM
Output
V
OUT
V
OL
V
OUT
V
OH
V
OL
DUT
Open
V
CC
Input
Output
50
W
35 pF
V
OUT
0.1
m
F
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