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Электронный компонент: NSBC124XDXV6T1G

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Semiconductor Components Industries, LLC, 2004
January, 2004 - Rev. 4
1
Publication Order Number:
NSBC114EDXV6/D
NSBC114EDXV6T1,
NSBC114EDXV6T5
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBC114EDXV6T1
series, two BRT devices are housed in the SOT-563 package which is
ideal for low power surface mount applications where board space is at
a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Lead-Free Solder Plating
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
q
JA
350 (Note 1)
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
q
JA
250 (Note 1)
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
- 55 to +150
C
1. FR-4 @ Minimum Pad
NSBC114EDXV6T1
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
SOT-563
CASE 463A
PLASTIC
1
2
3
6
5 4
xx = Specific Device Code
(see table on following page)
D
= Date Code
MARKING DIAGRAM
xx D
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NSBC114EDXV6T1 SOT-563
4 mm pitch
4000/Tape & Reel
NSBC114EDXV6T5 SOT-563
2 mm pitch
8000/Tape & Reel
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (k
W
)
R2 (k
W
)
NSBC114EDXV6T1
SOT-563
7A
10
10
NSBC124EDXV6T1
SOT-563
7B
22
22
NSBC144EDXV6T1
SOT-563
7C
47
47
NSBC114YDXV6T1
SOT-563
7D
10
47
NSBC114TDXV6T1 (Note 2)
SOT-563
7E
10
NSBC143TDXV6T1 (Notes 2)
SOT-563
7F
4.7
NSBC113EDXV6T1 (Note 2)
SOT-563
7G
1.0
1.0
NSBC123EDXV6T1 (Notes 2)
SOT-563
7H
2.2
2.2
NSBC143EDXV6T1 (Notes 2)
SOT-563
7J
4.7
4.7
NSBC143ZDXV6T1 (Notes 2)
SOT-563
7K
4.7
47
NSBC124XDXV6T1 (Notes 2)
SOT-563
7L
22
47
NSBC123JDXV6T1 (Note 2)
SOT-563
7M
2.2
47
NSBC115EDXV6T1 (Notes 2)
SOT-563
7N
100
100
NSBC144WDXV6T1 (Notes 2)
SOT-563
7P
47
22
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
NSBC114EDXV6T1
(V
EB
= 6.0 V, I
C
= 0)
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
m
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
3. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4)
DC Current Gain
NSBC114EDXV6T1
(V
CE
= 10 V, I
C
= 5.0 mA)
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) NSBC113EDXV6T1/NSBC123EDXV6T1
(I
C
= 10 mA, I
B
= 1 mA)
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC143EDXV6T1/NSBC143ZDXV6T1/NSBC124XDXV6T1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
W
)
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
W
)
NSBC144EDXV6T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
W
)
NSBC115EDXV6T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
W
)
NSBC144WDXV6T1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
W
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
W
)
NSBC113EDXV6T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
W
)
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC143ZDXV6T1
V
OH
4.9
-
-
Vdc
4. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5) (Continued)
Input Resistor
NSBC114EDXV6T1
NSBC124EDXV6T1
NSBC144EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1
NSBC143TDXV6T1
NSBC113EDXV6T1
NSBC123EDXV6T1
NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC115EDXV6T1
NSBC144WDXV6T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
W
Resistor Ratio
NSBC114EDXV6T1/NSBC124EDXV6T1/
NSBC144EDXV6T1/NSBC115EDXV6T1
NSBC114YDXV6T1
NSBC114TDXV6T1/NSBC143TDXV6T1
NSBC113EDXV6T1/NSBC123EDXV6T1/NSBC143EDXV6T1
NSBC143ZDXV6T1
NSBC124XDXV6T1
NSBC123JDXV6T1
NSBC144WDXV6T1
R1/R2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
5. Pulse Test: Pulse Width < 300
m
s, Duty Cycle < 2.0%
Figure 1. Derating Curve
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
R
q
JA
= 833
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC114EDXV6T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
= -25
C
75
C
25
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
T
A
= -25
C
25
C
Figure 5. Output Current versus Input Voltage
75
C
25
C
T
A
= -25
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC124EDXV6T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
100
10
1
100
75
C
25
C
100
0
V
in
, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001
2
4
6
8
10
T
A
= -25
C
0
I
C
, COLLECTOR CURRENT (mA)
100
T
A
= -25
C
75
C
10
1
0.1
10
20
30
40
50
25
C
Figure 11. Input Voltage versus Output Current
0.001
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS
)
T
A
= -25
C
75
C
25
C
0.01
0.1
1
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
7
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC144EDXV6T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 12. V
CE(sat)
versus I
C
0
2
4
6
8
10
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
75
C
25
C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
100
10 1
100
25
C
75
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 16. Input Voltage versus Output Current
0
20
40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25
C
75
C
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS
)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
= -25
C
T
A
= -25
C
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS -- NSBC114YDXV6T1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 18. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
C
25
C
T
A
= 75
C
V
CE
= 10
300
250
200
150
100
50
0
2
4
6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
25
C
I
C
/I
B
= 10
T
A
= -25
C
T
A
= 75
C
25
C
-25
C
V
O
= 0.2 V
T
A
= -25
C
75
C
V
O
= 5 V
25
C
75
C
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
9
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE O
G
M
0.08 (0.003)
X
D
6
5 PL
C
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
MIN
MAX
MIN
MAX
INCHES
1.50
1.70
0.059
0.067
MILLIMETERS
B
1.10
1.30
0.043
0.051
C
0.50
0.60
0.020
0.024
D
0.17
0.27
0.007
0.011
G
0.50 BSC
0.020 BSC
J
0.08
0.18
0.003
0.007
K
S
STYLE 1:
PIN 1. EMITTER 1
2. BASE 1
3. COLLECTOR 2
4. EMITTER 2
5. BASE 2
6. COLLECTOR 1
A
B
Y
1
2
3
4
5
S
K
STYLE 2:
PIN 1. EMITTER 1
2. EMITTER2
3. BASE 2
4. COLLECTOR 2
5. BASE 1
6. COLLECTOR 1
0.004
0.012
0.059
0.067
0.10
0.30
1.50
1.70
6
STYLE 3:
PIN 1. CATHODE 1
2. CATHODE 1
3. ANODE/ANODE 2
4. CATHODE 2
5. CATHODE 2
6. ANODE/ANODE 1
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NSBC114EDXV6T1, NSBC114EDXV6T5
http://onsemi.com
10
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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