Semiconductor Components Industries, LLC, 2003
September, 2003 - Rev. 0
1
Publication Order Number:
NTA4001N/D
NTA4001N
Small Signal MOSFET
20 V, 238 mA, Single, N-Channel, Gate
ESD Protection, SC-75
Features
Low Gate Charge for Fast Switching
Small 1.6 X 1.6 mm Footprint
ESD Protected Gate
Pb-Free Package for "Green Manufacturing" Compliance
Applications
Power Management Load Switch
Level Shift
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.
Maximum Ratings
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
20
V
Gate-to-Source Voltage
V
GS
10
V
Continuous Drain
Current (Note 1)
Steady State = 25
C
I
D
238
mA
Power Dissipation
(Note 1)
Steady State = 25
C
P
D
300
mW
Pulsed Drain Current
t
P
v
10
m
s
I
DM
714
mA
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Continuous Source Current (Body Diode)
I
SD
238
mA
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Thermal Resistance Ratings
Parameter
Symbol
Max
Unit
Junction-to-Ambient Steady State (Note 1)
R
q
JA
416
C/W
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.
[1 oz] including traces).
2.2
W
@ 2.5 V
Top View
SC-75 / SOT-416
CASE 463
Style 5
2
1
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SC-75 (3-Leads)
Drain
Gate
3
1
2
Source
3
R
DS(on)
Typ @ V
GS
I
D
MAX
(Note 1)
V
(BR)DSS
1.5
W
@ 4.5 V
20 V
238 mA
1
3
2
N-Channel
MARKING DIAGRAM
TF = Specific Device Code
D
= Date Code
TF D
1
3
2
Device
Package
Shipping
ORDERING INFORMATION
NTA4001NT1
SC-75
3000 / Tape & Reel
NTA4001NT1G
SC-75
Pb-Free
3000 / Tape & Reel
NTA4001N
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2
Electrical Characteristics
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100
m
A
20
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 20 V
1.0
m
A
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
10 V
100
m
A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= 3 V, I
D
= 100
m
A
0.5
1.0
1.5
V
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 10 mA
1.5
3.0
W
(
)
V
GS
= 2.5 V, I
D
= 10 mA
2.2
3.5
W
Forward Transconductance
g
FS
V
DS
= 3 V, I
D
= 10 mA
80
mS
CAPACITANCES
Input Capacitance
C
ISS
11.5
Output Capacitance
C
OSS
V
DS
= 5 V, f = 1 MHz,
V
GS
= 0 V
10
pF
Reverse Transfer Capacitance
C
RSS
V
GS
= 0 V
3.5
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t
d(ON)
13
ns
Rise Time
t
r
V
GS
= 4.5 V, V
DS
= 5 V,
15
Turn-Off Delay Time
t
d(OFF)
V
GS
= 4.5 V, V
DS
= 5 V,
I
D
= 10 mA, R
G
= 10
W
98
ns
Fall Time
t
f
60
Drain-Source Diode Characteristics
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 10 mA
0.66
0.8
V
NOTES:
2. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
NTA4001N
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3
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
0.4
0.8
1.2
1.6
2
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 1. On-region Characteristics
V
GS
= 10 V
V
GS
= 5 V
V
GS
= 2.8 V
V
GS
= 2 V
V
GS
= 2.4 V
V
GS
= 1.4 V
V
GS
= 1.2 V
.
T
J
= 25
C
0
0.04
0.08
0.12
0.16
0.2
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 2. Transfer Characteristics
T
J
= 25
C
T
J
= -55
C
T
J
= 125
C
VDS = 5 V
0.5
1
1.5
2
2.5
0
0.05
0.1
0.15
0.2
RDS
(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
I
D
, DRAIN CURRENT (A)
Figure 3. On-resistance versus Drain Current
and Temperature
V
GS
= 4.5 V
T
J
= 125
C
T
J
= 25
C
T
J
= -55
C
0.5
1
1.5
2
2.5
0
0.05
0.1
0.15
0.2
RDS
(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
I
D
, DRAIN CURRENT (A)
Figure 4. On-resistance versus Drain Current
and Gate Voltage
V
GS
= 2.5 V
V
GS
= 4.5 V
T
J
= 25
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
RDS
(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE (NORMALIZED)
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5. On-resistance Variation with
Temperature
I
D
= 0.01 A
V
GS
= 4.5 V
0
5
10
15
20
1
10
100
1000
I
DSS
, LEAKAGE (nA)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
T
J
= 125
C
T
J
= 150
C
V
GS
= 0 V
NTA4001N
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4
0
5
10
15
20
25
10
5
0
5
10
15
20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAP
ACIT
ANCE (pF)
T
J
= 25
C
Ciss
Coss
Crss
Ciss
Crss
VDS
V
GS
VDS = 0 V
V
GS
= 0 V
1
10
100
1000
1
10
100
R
G
, GATE RESISTANCE (
W
)
Figure 8. Resistive Switching Time Variation
versus Gate Resistance
t, TIME
(ns)
V
DD
= 5 V
I
D
= 10 mA
V
GS
= 4.5 V
t
d(off)
t
f
t
r
t
d(on)
0
0.02
0.04
0.06
0.08
0.1
0.5
0.55
0.6
0.65
0.7
0.75
0.8
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage
versus Current
I
S
, SOURCE CURRENT
(A)
T
J
= 25
C
V
GS
= 0 V
NTA4001N
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5
PACKAGE DIMENSIONS
SC-75 / SOT-416
CASE 463-01
ISSUE C
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.70
0.90
0.028
0.035
B
1.40
1.80
0.055
0.071
C
0.60
0.90
0.024
0.035
D
0.15
0.30
0.006
0.012
G
1.00 BSC
0.039 BSC
H
---
0.10
---
0.004
J
0.10
0.25
0.004
0.010
K
1.45
1.75
0.057
0.069
L
0.10
0.20
0.004
0.008
S
0.50 BSC
0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
B
-A-
-B-
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
NTA4001N
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6
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