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Электронный компонент: NTA7002N

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Semiconductor Components Industries, LLC, 2005
February, 2005 - Rev. 0
1
Publication Order Number:
NTA7002N/D
NTA7002N
Small Signal MOSFET
30 V, 154 mA, Single, N-Channel, Gate
ESD Protection, SC-75
Features
Low Gate Charge for Fast Switching
Small 1.6 x 1.6 mm Footprint
ESD Protected Gate
Pb-Free Package is Available
Applications
Power Management Load Switch
Level Shift
Portable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand-Held Computers, etc.
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
"
10
V
Continuous Drain
Current (Note 1)
Steady State = 25
C
I
D
154
mA
Power Dissipation
(Note 1)
Steady State = 25
C
P
D
300
mW
Pulsed Drain Current
t
P
v
10
m
s
I
DM
618
mA
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Continuous Source Current (Body Diode)
I
SD
154
mA
Lead Temperature for Soldering Purposes
(1/8
from case for 10 s)
T
L
260
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction-to-Ambient Steady State (Note 1)
R
q
JA
416
C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
7.5
W
@ 2.5 V
(Top View)
SC-75 / SOT-416
CASE 463
STYLE 5
2
1
SC-75 (3-Leads)
Drain
Gate
3
1
2
Source
3
R
DS(on)
Typ @ V
GS
I
D
MAX
(Note 1)
V
(BR)DSS
7.0
W
@ 4.5 V
30 V
154 mA
1
3
2
N-Channel
MARKING DIAGRAM
T6
= Specific Device Code
M
= Date Code
T6
M
1
3
2
Device
Package
Shipping
ORDERING INFORMATION
NTA7002NT1
SC-75
3000 Tape & Reel
NTA7002NT1G
SC-75
(Pb-Free)
3000 Tape & Reel
PIN CONNECTIONS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
NTA7002N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100
m
A
30
V
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V, V
DS
= 30 V
1.0
m
A
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
10 V
20
m
A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 100
m
A
0.5
1.0
1.5
V
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 4.5 V, I
D
= 154 mA
7.0
W
(
)
V
GS
= 2.5 V, I
D
= 154 mA
7.5
W
Forward Transconductance
g
FS
V
DS
= 3 V, I
D
= 154 mA
80
mS
CAPACITANCES
Input Capacitance
C
ISS
11.5
Output Capacitance
C
OSS
V
DS
= 5.0 V, f = 1 MHz,
V
GS
= 0 V
10
pF
Reverse Transfer Capacitance
C
RSS
V
GS
= 0 V
3.5
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t
d(ON)
13
ns
Rise Time
t
r
V
GS
= 4.5 V, V
DS
= 5.0 V,
15
Turn-Off Delay Time
t
d(OFF)
V
GS
= 4.5 V, V
DS
= 5.0 V,
I
D
= 75 mA, R
G
= 10
W
98
ns
Fall Time
t
f
60
Drain-Source Diode Characteristics
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 0.154 mA
0.77
0.9
V
2. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
NTA7002N
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3
TYPICAL PERFORMANCE CURVES
T
J
= 125
C
0
0.16
1.6
0.4
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0.12
0.04
0
Figure 1. On-Region Characteristics
0.6
1.4
2
Figure 2. Transfer Characteristics
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
2
0.5
Figure 3. On-Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
-50
0
-25
25
1
0.2
0
50
150
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
T
J
= 25
C
0.05
T
J
= -55
C
T
J
= 125
C
75
T
J
= 25
C
I
D
= 0.15 A
V
GS
= 4.5 V
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (NORMALIZED)
T
J
= 25
C
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
1.2
V
GS
= 2.5 V
0
0.15
1
25
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150
C
T
J
= 125
C
V
GS
= 4.5 V
10
100
2 V
V
DS
= 5 V
20
1.4 V
0.08
1.2 V
0.1
30
0.2
0.18
V
GS
= 10 V
2.5
125
100
0
2.0
10
5
1.2
0.8
1.2
1.5
0.2
V
GS
= 4.5 V
T
J
= 25
C
T
J
= -55
C
I
D,
DRAIN CURRENT (AMPS)
2
1000
5 V
2.4 V
1.8
1
1
2
0.5
0.05
0
0.15
0.1
2.5
1.5
0.2
0.4
1.4
0.6
1.6
0.8
1.8
0.14
0.1
0.02
0.06
2.8 V
0.16
0.12
0.04
0
0.08
0.2
0.8
1.6
NTA7002N
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4
TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
0.02
0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25
C
0.16
0.5
0.65
Figure 9. Diode Forward Voltage vs. Current
0.8
0.6
0.08
0.06
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
5
10
0
5
10
5
T
J
= 25
C
C
iss
C
oss
C
rss
15
0
20
C
iss
C
rss
V
DS
= 0 V
V
GS
= 0 V
V
DS
V
GS
R
G
, GATE RESISTANCE (OHMS)
1
10
100
100
10
t, TIME
(ns)
V
DD
= 5.0 V
I
D
= 75 mA
V
GS
= 4.5 V
t
r
t
d(on)
1000
t
f
t
d(off)
1
0.04
25
0.7
0.55
10
15
0.14
20
0.12
0.1
0.75
NTA7002N
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5
PACKAGE DIMENSIONS
SC-75 / SOT-416
CASE 463-01
ISSUE D
STYLE 5:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
1.10
0.043
0.53
0.020
0.50
0.020
0.53
0.020
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
D
-E-
-D-
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
H
E
DIM
MIN
NOM
MAX
MILLIMETERS
A
0.70
0.80
0.90
A1
0.00
0.05
0.10
b
C
0.10
0.15
0.25
D
1.40
1.60
1.80
E
e
1.00 BSC
0.027
0.031
0.035
0.000
0.002
0.004
0.004
0.006
0.010
0.055
0.062
0.070
0.04 BSC
MIN
NOM
MAX
INCHES
0.15
0.20
0.30
0.006
0.008
0.012
H
E
L
0.10
0.15
0.20
1.45
1.60
1.75
0.004
0.006
0.008
0.057
0.062
0.068
0.70
0.75
0.80
0.027
0.029
0.031
NTA7002N
http://onsemi.com
6
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NTA7002N/D
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