Semiconductor Components Industries, LLC, 2004
August, 2004 - Rev. 2
1
Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, N-Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the "best of design" available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain-to-source diode has a ideal fast but soft recovery.
Features
Pb-Free Packages are Available
Ultra-Low R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many Applications
MAXIMUM RATINGS
(T
C
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
Vdc
Drain-to-Gate Voltage (R
GS
= 1.0 M
W
)
V
DGR
30
Vdc
Gate-to-Source Voltage
- Continuous
- Non-Repetitive (t
p
v
10 ms)
V
GS
V
GS
"
20
"
24
Vdc
Drain Current
- Continuous @ T
A
= 25
_
C
- Continuous @ T
A
= 100
_
C
- Single Pulse (t
p
v
10
m
s)
I
D
I
D
I
DM
20
16
60
Adc
Apk
Total Power Dissipation @ T
A
= 25
_
C
Derate above 25
C
Total Power Dissipation @ T
C
= 25
C (Note 1)
P
D
74
0.6
1.75
W
W/
C
W
Operating and Storage Temperature Range
T
J
, T
stg
- 55 to
150
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 30 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 24 A, V
DS
= 34 Vdc)
E
AS
288
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient
- Junction-to-Ambient (Note 1)
R
q
JC
R
q
JA
R
q
JA
1.67
100
71.4
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 A, 30 V, R
DS(on)
= 27 m
W
N-Channel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
20N3L
= Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
1 2
3
4
DPAK-3
CASE 369D
STYLE 2
1
2
3
4
MARKING
DIAGRAMS
A
YWW
20
N3L
1
Gate
3
Source
2
Drain
4
Drain
A
YWW
20
N3L
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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NTD20N03L27
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2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250
m
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
-
-
43
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
=150
C)
I
DSS
-
-
-
-
10
100
m
Adc
Gate-Body Leakage Current (V
GS
=
20
Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250
m
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.6
5.0
2.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance (Note 2)
(V
GS
= 4.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
R
DS(on)
-
-
28
23
31
27
m
W
Static Drain-to-Source On-Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 20 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc, T
J
= 150
C)
V
DS(on)
-
-
0.48
0.40
0.54
-
Vdc
Forward Transconductance (Note 2) (V
DS
= 5.0 Vdc, I
D
= 10 Adc)
g
FS
-
21
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
C
iss
-
1005
1260
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1 0 MHz)
C
oss
-
271
420
Transfer Capacitance
f = 1.0 MHz)
C
rss
-
87
112
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
(V
20 Vd
I
20 Ad
t
d(on)
-
17
25
ns
Rise Time
(V
DD
= 20 Vdc, I
D
= 20 Adc,
V
GS
= 5 0 Vdc
t
r
-
137
160
Turn-Off Delay Time
V
GS
= 5.0 Vdc,
R
G
= 9.1
W
) (Note 2)
t
d(off)
-
38
45
Fall Time
R
G
= 9.1
W
) (Note 2)
t
f
-
31
40
Gate Charge
(V
48 Vdc I
15 Adc
Q
T
-
13.8
18.9
nC
Ga e C a ge
(V
DS
= 48 Vdc, I
D
= 15 Adc,
V
GS
= 10 Vdc) (Note 2)
Q
1
-
2.8
-
V
GS
= 10 Vdc) (Note 2)
Q
2
-
6.6
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 125
C)
V
SD
-
-
1.0
0.9
1.15
-
Vdc
Reverse Recovery Time
t
rr
-
23
-
ns
e e se
eco e y
e
(I
S
=15 Adc, V
GS
= 0 Vdc,
t
a
-
13
-
s
(I
S
15 Adc, V
GS
0 Vdc,
dl
S
/dt = 100 A/
m
s) (Note 2)
t
b
-
10
-
Reverse Recovery Stored Charge
S
Q
RR
-
0.017
-
m
C
2. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device
Package
Shipping
NTD20N03L27
DPAK
75 Units/Rail
NTD20N03L27G
DPAK
(Pb-Free)
75 Units/Rail
NTD20N03L27-1
DPAK-3
75 Units/Rail
NTD20N03L27-1G
DPAK
(Pb-Free)
75 Units/Rail
NTD20N03L27T4
DPAK
2500 Tape & Reel
NTD20N03L27T4G
DPAK
(Pb-Free)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD20N03L27
http://onsemi.com
3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.4
0.2
-I
D
, DRAIN CURRENT (AMPS)
0
-V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.04
0.035
0.03
0.025
22
15
12
0.02
0.015
0.01
0.005
0
5
25
28
32
Figure 3. On-Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (NORMALIZED)
-I
DSS
, LEAKAGE (nA)
40
-50
75
50
0
-25
100
150
0.5
1.5
5
0
28
32
24
20
36
16
40
0.02
0.01
0.025
0.03
0
12
15
9
6
18
3
30
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5
10
20
25
35
1.4
2
4
0.6
0.8
1.2
1.6
1.8
1
2
2.5
3
3.5
4
4.5
8
18
35
38
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
4
8
12
125
25
21
24
27
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 2.5 V
8
32
36
T
J
= 25
C
T
J
= 100
C
T
J
= -55
C
V
DS
> = 10 V
V
GS
= 5 V
T
J
= 25
C
T
J
= 100
C
T
J
= -55
C
V
GS
= 5 V
V
GS
= 10 V
T
J
= 25
C
I
D
= 10 A
V
GS
= 5 V
T
J
= 100
C
T
J
= 125
C
V
GS
= 0 V
T
J
= 25
C
NTD20N03L27
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4
4
350
300
200
250
150
100
0
8
4
10
2
6
0
12
14
10
1500
8
2
4
C, CAP
ACIT
ANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
1
1000
100
10
10
1
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (
W
)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
E
AS
, SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
2500
25
125
100
75
50
150
0
6
14
0.0
0.4
0.5
0.3
0.2
0.6
0.1
1.0
10
16
8
12
0
18
20
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
500
1000
200
14
25
8
6
2
0
6
10 12
16 18 20 23
2
4
8
10
12
6
4
2
0.7
0.8
0.9
50
V
GS
-
V
DS
C
iss
C
oss
C
rss
Q
1
Q
2
Q
I
D
= 20 A
T
J
= 25
C
V
GS
V
DS
= 20 V
I
D
= 20 A
V
GS
= 5.0 V
T
J
= 25
C
t
r
t
f
t
d(off)
t
d(on)
V
GS
= 0 V
T
J
= 25
C
I
D
= 24 A
NTD20N03L27
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C-01
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
-T-
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.22
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.180
0.215
4.57
5.45
S
0.025
0.040
0.63
1.01
U
0.020
---
0.51
---
V
0.035
0.050
0.89
1.27
Z
0.155
---
3.93
---
1
2
3
4
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD20N03L27
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6
PACKAGE DIMENSIONS
DPAK-3
CASE 369D-01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
4
V
S
A
K
-T-
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.180
0.215
4.45
5.45
S
0.025
0.040
0.63
1.01
V
0.035
0.050
0.89
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z
0.155
---
3.93
---
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NTD20N03L27/D
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