Semiconductor Components Industries, LLC, 2001
January, 2001 Rev. 0
1
Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts
NChannel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the "best of design" available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The draintosource diode has a ideal fast but soft recovery.
Features
UltraLow RDS(on), single base, advanced technology
SPICE parameters available
Diode is characterized for use in bridge circuits
IDSS and VDS(on) specified at elevated temperatures
High Avalanche Energy Specified
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTD20N03L in many applications
MAXIMUM RATINGS
(TC = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
DraintoGate Voltage (RGS = 1.0 M
)
VDGR
30
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp
v
10 ms)
VGS
VGS
"
20
"
24
Vdc
Drain Current
Continuous @ TA = 25
_
C
Continuous @ TA = 100
_
C
Single Pulse (tp
v
10
s)
ID
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation @ TA = 25
_
C
Derate above 25
C
Total Power Dissipation @ TC = 25
C
(Note 1.)
PD
74
0.6
1.75
Watts
W/
C
W
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25
C
(VDD = 30 Vdc, VGS = 5 Vdc, L =
1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc)
EAS
288
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1.)
R
JC
R
JA
R
JA
1.67
100
71.4
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
TL
260
C
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 AMPERES
30 VOLTS
RDS(on) = 27 m
Device
Package
Shipping
ORDERING INFORMATION
NTD20N03L27
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
NChannel
D
S
G
NTD20N03L271
DPAK
75 Units/Rail
MARKING
DIAGRAM
20N3L
= Device Code
Y
= Year
WW
= Work Week
YWW
20N3L
1
Gate
3
Source
2
Drain
NTD20N03L27T4
DPAK
2500 Tape & Reel
4
Drain
1
2
3
4
NTD20N03L27
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2
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 2.)
(VGS = 0 Vdc, ID = 250
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
43
Vdc
mV/
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150
C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS =
20
Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage (Note 2.)
(VDS = VGS, ID = 250
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.6
5.0
2.0
Vdc
mV/
C
Static DraintoSource OnResistance (Note 2.)
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on)
28
23
31
27
m
Static DraintoSource OnResistance (Note 2.)
(VGS = 5.0 Vdc, ID = 20 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150
C)
VDS(on)
0.48
0.40
0.54
Vdc
Forward Transconductance (Note 2.) (VDS = 5.0 Vdc, ID = 10 Adc)
gFS
21
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
1005
1260
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
271
420
Transfer Capacitance
f = 1.0 MHz)
Crss
87
112
SWITCHING CHARACTERISTICS (Note 3.)
TurnOn Delay Time
td(on)
17
25
ns
Rise Time
(VDD = 20 Vdc, ID = 20 Adc,
VGS = 5 0 Vdc
tr
137
160
TurnOff Delay Time
VGS = 5.0 Vdc,
RG = 9.1
) (Note 2.)
td(off)
38
45
Fall Time
RG 9.1
) (Note 2.)
tf
31
40
Gate Charge
(V
48 Vd
I
15 Ad
QT
13.8
18.9
nC
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc) (Note 2.)
Q1
2.8
VGS = 10 Vdc) (Note 2.)
Q2
6.6
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 20 Adc, VGS = 0 Vdc) (Note 2.)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
C)
VSD
1.0
0.9
1.15
Vdc
Reverse Recovery Time
trr
23
ns
(IS =15 Adc VGS = 0 Vdc
ta
13
(IS =15 Adc, VGS = 0 Vdc,
dlS/dt = 100 A/
s) (Note 2.)
tb
10
Reverse Recovery Stored
Charge
dlS/dt = 100 A/
s) (Note 2.)
QRR
0.017
C
2. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
3. Switching characteristics are independent of operating junction temperature.
NTD20N03L27
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3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.4
0.2
I
D
, DRAIN CURRENT (AMPS)
0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I D
, DRAIN CURRENT (AMPS)
2
0.04
0.035
0.03
0.025
22
15
12
0.02
0.015
0.01
0.005
0
5
25
28
32
Figure 3. OnResistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (
C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
40
50
75
50
0
25
100
150
0.5
1.5
5
0
28
32
24
20
36
16
40
0.02
0.01
0.025
0.03
0
12
15
9
6
18
3
30
VDS, DRAINTOSOURCE VOLTAGE (V)
5
10
20
25
35
1.4
2
4
0.6
0.8
1.2
1.6
1.8
1
2
2.5
3
3.5
4
4.5
8
18
35
38
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
4
8
12
125
25
21
24
27
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
8
32
36
TJ = 25
C
TJ = 100
C
TJ = 55
C
VDS > = 10 V
VGS = 5 V
TJ = 25
C
TJ = 100
C
TJ = 55
C
VGS = 5 V
VGS = 10 V
TJ = 25
C
ID = 10 A
VGS = 5 V
TJ = 100
C
TJ = 125
C
VGS = 0 V
TJ = 25
C
NTD20N03L27
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4
4
350
300
200
250
150
100
0
8
4
10
2
6
0
12
14
10
1500
8
2
4
C, CAP
ACIT
ANCE (pF)
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
GS
, GA
TET
OSOURCE VOL
T
AGE (V)
1
1000
100
10
10
1
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
I S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (
C)
E
AS
, SINGLE PULSE DRAINT
OSOURCE
A
V
ALANCHE ENERGY (mJ)
2500
25
125
100
75
50
150
0
6
14
0.0
0.4
0.5
0.3
0.2
0.6
0.1
1.0
10
16
8
12
0
18
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
500
1000
200
14
25
8
6
2
0
6
10 12
16 18 20 23
2
4
8
10
12
6
4
2
0.7
0.8
0.9
50
VGS VDS
Ciss
Coss
Crss
Q1
Q2
Q
ID = 20 A
TJ = 25
C
VGS
VDS = 20 V
ID = 20 A
VGS = 5.0 V
TJ = 25
C
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25
C
ID = 24 A
NTD20N03L27
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5
PACKAGE DIMENSIONS
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.175
0.215
4.45
5.46
S
0.020
0.050
0.51
1.27
U
0.020
---
0.51
---
V
0.030
0.050
0.77
1.27
Z
0.138
---
3.51
---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
DPAK
CASE 369A13
ISSUE AA
NTD20N03L27
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6
Notes
NTD20N03L27
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7
Notes
NTD20N03L27
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8
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NTD20N03L27/D
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