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Semiconductor Components Industries, LLC, 2004
August, 2004 - Rev. 4
1
Publication Order Number:
NTD3055-150/D
NTD3055-150
Power MOSFET 9.0 A, 60 V
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb-Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
60
Vdc
Drain-to-Gate Voltage (R
GS
= 10 M
W
)
V
DGR
60
Vdc
Gate-to-Source Voltage
- Continuous
- Non-repetitive (t
p
v
10 ms)
V
GS
V
GS
"
20
"
30
Vdc
Drain Current
- Continuous @ T
A
= 25
C
- Continuous @ T
A
= 100
C
- Single Pulse (t
p
v
10
m
s)
I
D
I
D
I
DM
9.0
3.0
27
Adc
Apk
Total Power Dissipation @ T
A
= 25
C
Derate above 25
C
Total Power Dissipation @ T
A
= 25
C (Note 1)
Total Power Dissipation @ T
A
= 25
C (Note 2)
P
D
28.8
0.19
2.1
1.5
W
W/
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
- 55 to
175
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 7.75 A, V
DS
= 60 Vdc)
E
AS
30
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
5.2
71.4
100
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
9.0 AMPERES, 60 VOLTS
R
DS(on)
= 122 m
W
(Typ)
N-Channel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
"SURFACE MOUNT"
MARKING
DIAGRAMS
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK-3
CASE 369D
STYLE 2
"STRAIGHT LEAD"
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
AY
W
3150
AY
W
3150
3150
Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
http://onsemi.com
NTD3055-150
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2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
m
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
-
-
70.2
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
C)
I
DSS
-
-
-
-
1.0
10
m
Adc
Gate-Body Leakage Current (V
GS
=
20
Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
m
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
-
3.0
6.4
4.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc)
R
DS(on)
-
122
150
m
W
Static Drain-to-Source On-Voltage (Note 3)
(V
GS
= 10 Vdc, I
D
= 9.0 Adc)
(V
GS
= 10 Vdc, I
D
= 4.5 Adc, T
J
= 150
C)
V
DS(on)
-
-
1.4
1.1
1.9
-
Vdc
Forward Transconductance (Note 3) (V
DS
= 7.0 Vdc, I
D
= 6.0 Adc)
g
FS
-
5.4
-
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
-
200
280
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
-
70
100
Transfer Capacitance
f = 1.0 MHz)
C
rss
-
26
40
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(on)
-
11.2
25
ns
Rise Time
(V
DD
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc
t
r
-
37.1
80
Turn-Off Delay Time
V
GS
= 10 Vdc,
R
G
= 9.1
W
) (Note 3)
t
d(off)
-
12.2
25
Fall Time
G
) (
)
t
f
-
23
50
Gate Charge
Q
T
-
7.1
15
nC
(V
DS
= 48 Vdc, I
D
= 9.0 Adc,
V
GS
= 10 Vdc) (Note 3)
Q
1
-
1.7
-
V
GS
= 10 Vdc) (Note 3)
Q
2
-
3.5
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 9.0 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 19 Adc, V
GS
= 0 Vdc, T
J
=
150
C)
V
SD
-
-
0.98
0.86
1.20
-
Vdc
Reverse Recovery Time
t
rr
-
28.9
-
ns
(I
S
= 9.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
m
s) (Note 3)
t
a
-
21.6
-
dI
S
/dt = 100 A/
m
s) (Note 3)
t
b
-
7.3
-
Reverse Recovery Stored Charge
Q
RR
-
0.036
-
m
C
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD3055-150
http://onsemi.com
3
T
J
= -55
C
T
J
= 100
C
0.6
10
1
100
1000
12
8
16
4
0
20
0
12
2
3
1
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.1
8
0
4
12
16
24
Figure 3. On-Resistance versus
Gate-To-Source Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-To-Source Leakage
Current versus Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
20
-50
100
75
0
-25
125
175
3
4
7
0
40
30
20
10
60
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
4
8
16
8
V
GS
= 0 V
T
J
= 150
C
T
J
= 100
C
I
D
= 4.5 A
V
GS
= 10 V
V
GS
= 10 V
V
DS
10 V
T
J
= 25
C
V
GS
= 10 V
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
(NORMALIZED)
V
GS
= 9 V
V
GS
= 7 V
50
25
5
6
4
6
7
5
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
9
8
20
0.2
0.3
0.4
0.5
T
J
= -55
C
T
J
= 100
C
T
J
= 25
C
0
0.1
8
4
12
16
24
V
GS
= 15 V
20
0.2
0.3
0.4
0.5
T
J
= -55
C
T
J
= 100
C
T
J
= 25
C
150
0.8
1
1.2
1.4
1.6
1.8
2
2.2
50
T
J
= 125
C
0
NTD3055-150
http://onsemi.com
4
V
GS
V
DS
4
10
6
0
12
4
10
320
20
10
0
C, CAP
ACIT
ANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
1
100
10
10
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (
W
)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
560
0
1
6
0.6
0.92
0.84
0.76
0.68
1
6
2
0
8
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
160
240
400
25
2
I
D
= 9 A
T
J
= 25
C
Q
2
Q
1
V
GS
Q
T
V
DS
= 30 V
I
D
= 9 A
V
GS
= 10 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25
C
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
rss
C
iss
C
oss
C
rss
C
iss
2
3
4
5
80
480
15
5
5
7
8
8
16
0.1
100
10
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
E
AS
, SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
I
D
, DRAIN CURRENT (AMPS)
25
125
100
75
50
24
8
0
32
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
I
D
= 7.75 A
175
150
1
10
1
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 ms
10
m
s
1 ms
dc
100
m
s
NTD3055-150
http://onsemi.com
5
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 13. Thermal Response
t, TIME (s)
10
1
0.00001
0.001
0.01
0.1
10
0.0001
1
0.1
r(t), NORMALIZED EFFECTIVE
TRANSIENT
THERMAL RESIST
ANCE
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.01
ORDERING INFORMATION
Device
Package
Shipping
NTD3055-150
DPAK
75 Units/Rail
NTD3055-150G
DPAK
(Pb-Free)
75 Units/Rail
NTD3055-150-1
DPAK-3
75 Units/Rail
NTD3055-150-1G
DPAK-3
(Pb-Free)
75 Units/Rail
NTD3055-150T4
DPAK
2500 Tape & Reel
NTD3055-150T4G
DPAK
(Pb-Free)
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD3055-150
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6
PACKAGE DIMENSIONS
DPAK
CASE 369C-01
ISSUE O
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
-T-
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.22
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.180
0.215
4.57
5.45
S
0.025
0.040
0.63
1.01
U
0.020
---
0.51
---
V
0.035
0.050
0.89
1.27
Z
0.155
---
3.93
---
1
2
3
4
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
NTD3055-150
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7
PACKAGE DIMENSIONS
DPAK-3
CASE 369D-01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
4
V
S
A
K
-T-
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.180
0.215
4.45
5.45
S
0.025
0.040
0.63
1.01
V
0.035
0.050
0.89
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z
0.155
---
3.93
---
NTD3055-150
http://onsemi.com
8
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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Phone: 81-3-5773-3850
NTD3055-150/D
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