NTD32N06L
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 1
1
Publication Order Number:
NTD32N06L/D
NTD32N06L
Power MOSFET
32 Amps, 60 Volts, Logic Level
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Smaller Package than MTB30N06VL
Lower R
DS(on)
Lower V
DS(on)
Lower Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 10 M
)
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
v
10 ms)
V
GS
V
GS
"
15
"
20
Vdc
Drain Current
Continuous @ T
A
= 25
C
Continuous @ T
A
= 100
C
Single Pulse (t
p
v
10
s)
I
D
I
D
I
DM
32
22
90
Adc
Apk
Total Power Dissipation @ T
A
= 25
C
Derate above 25
C
Total Power Dissipation @ T
A
= 25
C (Note 1.)
Total Power Dissipation @ T
A
= 25
C (Note 2.)
P
D
93.75
0.625
2.88
1.5
W
W/
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
C (Note 3.)
(V
DD
= 50 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25
)
E
AS
313
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1.)
JunctiontoAmbient (Note 2.)
R
JC
R
JA
R
JA
1.6
52
100
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
1. When surface mounted to an FR4 board using 1
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
3. Repetitive rating; pulse width limited by maximum junction temperature.
32 AMPERES
60 VOLTS
R
DS(on)
= 28 m
W
Device
Package
Shipping
ORDERING INFORMATION
NTD32N06L
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
NChannel
D
S
G
NTD32N06L1
DPAK
75 Units/Rail
MARKING
DIAGRAM
NTD32N06L = Device Code
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
NTD
32N06L
1
Gate
3
Source
2
Drain
NTD32N06LT4
DPAK
2500 Tape & Reel
4
Drain
1
2
3
4
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NTD32N06L
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2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1)
(V
GS
= 0 Vdc, I
D
= 250
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
70
62
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
C)
I
DSS
1.0
10
Adc
GateBody Leakage Current (V
GS
=
15
Vdc, V
DS
= 0 Vdc)
I
GSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(V
DS
= V
GS
, I
D
= 250
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
1.7
4.8
2.0
Vdc
mV/
C
Static DraintoSource OnResistance (Note 1)
(V
GS
= 5 Vdc, I
D
= 16 Adc)
R
DS(on)
23.7
28
m
W
Static DraintoSource OnResistance (Note 1)
(V
GS
= 5 Vdc, I
D
= 20 Adc)
(V
GS
= 5 Vdc, I
D
= 32 Adc)
(V
GS
= 5 Vdc, I
D
= 16 Adc, T
J
= 150
C)
V
DS(on)
0.48
0.78
0.61
0.67
Vdc
Forward Transconductance (Note 1) (V
DS
= 6 Vdc, I
D
= 16 Adc)
g
FS
27
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
C
iss
1214
1700
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
oss
343
480
Transfer Capacitance
f = 1.0 MHz)
C
rss
87
180
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
t
d(on)
12.8
30
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 32 Adc,
V
GS
= 5 Vdc
t
r
221
450
TurnOff Delay Time
V
GS
= 5 Vdc,
R
G
= 9.1
) (Note 1)
t
d(off)
37
80
Fall Time
R
G
9.1
) (Note 1)
t
f
128
260
Gate Charge
(V
48 Vd
I
32 Ad
Q
T
23
50
nC
(V
DS
= 48 Vdc, I
D
= 32 Adc,
V
GS
= 5 Vdc) (Note 1)
Q
1
4.5
V
GS
= 5 Vdc) (Note 1)
Q
2
14
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 32 Adc, V
GS
= 0 Vdc) (Note 1)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150
C)
V
SD
0.89
0.95
0.74
1.0
Vdc
Reverse Recovery Time
(I
32 Ad
V
0 Vd
t
rr
56
ns
(I
S
= 32 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
s) (Note 1)
t
a
31
dI
S
/dt = 100 A/
s) (Note 1)
t
b
25
Reverse Recovery Stored Charge
Q
RR
0.093
m
C
1. Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
2. Switching characteristics are independent of operating junction temperatures.
NTD32N06L
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3
1.8
1.6
1.2
1.4
1
0.8
0.6
100
10
1000
10000
40
20
50
10
30
0
60
0.026
0
50
4
20
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.042
0.038
0.026
40
30
20
0.03
0.022
0.018
0.014
0.01
10
50
60
Figure 3. OnResistance vs. Drain Current
I
D
, DRAIN CURRENT (AMPS)
Figure 4. OnResistance vs. Drain Current
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. DraintoSource Leakage Current
vs. Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
50
50
25
0
25
75
125
100
1.8
3.4
3.8
3
2.6
4.2
2.2
5
0
30
40
20
50
10
60
0.01
0.03
0.022
0.018
0.034
0.042
0
40
50
30
20
60
10
V
GS
= 10 V
3
10
30
40
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
DS
> = 10 V
T
J
= 25
C
T
J
= 55
C
T
J
= 100
C
4.6
T
J
= 25
C
T
J
= 55
C
T
J
= 100
C
V
GS
= 5 V
V
GS
= 10 V
150
175
V
GS
= 0 V
T
J
= 150
C
T
J
= 100
C
T
J
= 125
C
I
D
= 16 A
V
GS
= 5 V
0.014
0.038
0.034
T
J
= 25
C
T
J
= 55
C
T
J
= 100
C
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4
1000
100
10
1
0.1
1000
100
10
6
5
4
3
2
1
0
350
150
100
50
0
32
28
24
20
16
12
0
10
3200
2800
10
2400
2000
15
5
0
20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE
(VOLTS)
C, CAP
ACIT
ANCE (pF)
1600
1200
800
400
0
5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
GS
, GA
TET
OSOURCE VOL
T
AGE (VOL
TS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAINT
OSOURCE
A
V
ALANCHE ENERGY (mJ)
25
0
16
20
12
8
24
4
1
10
100
0.6
0.76
0.88
0.72
0.68
0.92
0.64
0.96
0.1
10
100
1
25
125
150
100
75
175
50
I
D
= 32 A
T
J
= 25
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
rss
C
iss
C
oss
C
rss
8
4
0.8
0.84
Q
2
C
iss
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
V
DS
= 30 V
I
D
= 32 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
C
I
D
= 32 A
10 ms
1 ms
100
s
dc
t
r
t
d(off)
t
d(on)
t
f
V
GS
V
DS
Q
1
200
250
300
4000
Mounted on 3
sq. FR4 board (1
sq.
2 oz. Cu 0.06
thick single sided)
with one die operating,10 s max
Q
T
R
DS(on)
Limit
Thermal Limit
Package Limit
3600
NTD32N06L
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5
10
0.1
0.01
0.00001
0.0001
r(t)
, EFFECTIVE TRANSIENT THERMAL RESPONSE
(NORMALIZED)
t, TIME (s)
Figure 13. Thermal Response
1
0.001
0.01
0.1
1
10
100
1000
10
0.1
0.01
0.00001
0.0001
r(t)
, EFFECTIVE TRANSIENT THERMAL RESIST
ANCE
(NORMALIZED)
t, TIME (s)
1
0.001
0.01
0.1
1
10
Figure 14. Thermal Response
Normalized to R
JC
at Steady State
Normalized to R
JA
at Steady State,
1
square Cu Pad, Cu Area 1.127 in
2
,
3 x 3 inch FR4 board
NTD32N06L
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6
PACKAGE DIMENSIONS
DPAK
CASE 369A13
ISSUE AB
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
T
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.250
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.033
0.040
0.84
1.01
F
0.037
0.047
0.94
1.19
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.175
0.215
4.45
5.46
S
0.020
0.050
0.51
1.27
U
0.020
---
0.51
---
V
0.030
0.050
0.77
1.27
Z
0.138
---
3.51
---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
NTD32N06L
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7
Notes
NTD32N06L
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
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4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
NTD32N06L/D
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