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Электронный компонент: NTD4302-001

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Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 3
1
Publication Order Number:
NTD4302/D
NTD4302
Power MOSFET
68 Amps, 30 Volts
NChannel DPAK
Features
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS Specified at Elevated Temperature
DPAK Mounting Information Provided
Applications
DCDC Converters
Low Voltage Motor Control
Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones, and
PCMCIA Cards
68 AMPERES
30 VOLTS
10 m
@ VGS = 10 V
Device
Package
Shipping
ORDERING INFORMATION
NTD4302
DPAK
75 Units/Rail
CASE 369A
DPAK
(Bend Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
NChannel
D
S
G
NTD43021
DPAK
Straight Lead
75 Units/Rail
4302
= Device Code
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
4302
1
Gate
3
Source
2
Drain
NTD4302T4
DPAK
2500/Tape & Reel
4
Drain
1
2
3
4
YWW
T
4302
1
Gate
3
Source
2
Drain
4
Drain
1 2
3
4
CASE 369
DPAK
(Straight Lead)
STYLE 2
NTD4302
http://onsemi.com
2
MAXIMUM RATINGS
(TC = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
30
Vdc
GatetoSource Voltage Continuous
VGS
20
Vdc
Thermal Resistance
JunctiontoAmbient (Note 1)
Total Power Dissipation @ TA = 25
C
Continuous Drain Current @ TA = 25
C (Note 6)
Continuous Drain Current @ TA = 100
C
R
JC
PD
ID
ID
1.65
75
68
43
C/W
Watts
Amps
Amps
Thermal Resistance
JunctiontoAmbient (Note 2)
Total Power Dissipation @ TA = 25
C
Continuous Drain Current @ TA = 25
C
Continuous Drain Current @ TA = 100
C
Pulsed Drain Current (Note 5)
R
JA
PD
ID
ID
IDM
25
5.0
18.5
11.5
60
C/W
Watts
Amps
Amps
Amps
Thermal Resistance
JunctiontoAmbient (Note 3)
Total Power Dissipation @ TA = 25
C
Continuous Drain Current @ TA = 25
C
Continuous Drain Current @ TA = 100
C
Pulsed Drain Current (Note 5)
R
JA
PD
ID
ID
IDM
67
1.87
11.3
7.1
36
C/W
Watts
Amps
Amps
Amps
Thermal Resistance
JunctiontoAmbient (Note 4)
Total Power Dissipation @ TA = 25
C
Continuous Drain Current @ TA = 25
C
Continuous Drain Current @ TA = 100
C
Pulsed Drain Current (Note 5)
R
JA
PD
ID
ID
IDM
120
1.04
8.4
5.3
28
C/W
Watts
Amps
Amps
Amps
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
C
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25
C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 17 Apk, L = 5.0 mH, RG = 25
)
EAS
722
mJ
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 10 seconds
TL
260
C
1. Mounted on Heat Sink, Steady State.
2. Mounted on 2
square FR4 Board (1
sq. 2 oz. Cu 0.06
thick single sided), Time
10 seconds.
3. Mounted on 2
square FR4 Board (1
sq. 2 oz. Cu 0.06
thick single sided), Steady State.
4. Minimum FR4 or G10 PCB, Steady State.
5. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
6. Current Limited by Internal Lead Wires.
NTD4302
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250
A)
Positive Temperature Coefficient
V(BR)DSS
30
25

Vdc
mV/
C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 25
C)
(VGS = 0 Vdc, VDS = 30 Vdc, TJ = 125
C)
IDSS


1.0
10
Adc
GateBody Leakage Current (VGS =
20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250
Adc)
Negative Temperature Coefficient
VGS(th)
1.0
1.9
3.8
3.0
Vdc
Static DrainSource OnState Resistance
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)


0.0078
0.0078
0.010
0.010
0.010
0.013
Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc)
gFS
20
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
V
0 Vd
Ciss
2050
2400
pF
Output Capacitance
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1 0 MHz)
Coss
640
800
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
225
310
SWITCHING CHARACTERISTICS (Note 8)
TurnOn Delay Time
td(on)
11
20
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS 10 Vdc
tr
15
25
TurnOff Delay Time
VGS = 10 Vdc,
RG = 6.0
)
td(off)
85
130
Fall Time
RG = 6.0
)
tf
55
90
TurnOn Delay Time
td(on)
11
20
ns
Rise Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS 10 Vdc
tr
13
20
TurnOff Delay Time
VGS = 10 Vdc,
RG = 2.5
)
td(off)
55
90
Fall Time
RG = 2.5
)
tf
40
75
TurnOn Delay Time
td(on)
15
ns
Rise Time
(VDD = 24 Vdc, ID = 20 Adc,
VGS 10 Vdc
tr
25
TurnOff Delay Time
VGS = 10 Vdc,
RG = 2.5
)
td(off)
40
Fall Time
RG = 2.5
)
tf
58
Gate Charge
(V
24 Vd
I
2 0 Ad
QT
55
80
nC
Ga e C a ge
(VDS = 24 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc)
Qgs (Q1)
5.5
VGS = 10 Vdc)
Qgd (Q2)
15
BODYDRAIN DIODE RATINGS (Note 7)
Diode Forward OnVoltage
(IS = 2.3 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125
C)
VSD


0.75
0.90
0.65
1.0

Vdc
Reverse Recovery Time
(I
2 3 Ad
V
0 Vd
trr
39
65
ns
e e se
eco e y
e
(IS = 2.3 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
s)
ta
20
s
dIS/dt = 100 A/
s)
tb
19
Reverse Recovery Stored Charge
Qrr
0.043
C
7. Indicates Pulse Test: Pulse Width = 300
sec max, Duty Cycle
2%.
8. Switching characteristics are independent of operating junction temperature.
NTD4302
http://onsemi.com
4
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
10000
40
20
50
10
30
0
60
0.005
0
30
2
1.5
1
I D
, DRAIN CURRENT (AMPS)
0
VGS, GATETOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I D
, DRAIN CURRENT (AMPS)
0
0.1
0.075
0.05
0.025
4
0
2
6
8
10
Figure 3. OnResistance vs.
GateToSource Voltage
VGS, GATETOSOURCE VOLTAGE (V)
Figure 4. OnResistance vs. Drain Current
and Gate Voltage
ID, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (
C)
Figure 6. DrainToSource Leakage
Current vs. Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
I DSS
, LEAKAGE (nA)
50
50
100
75
0
25
125
150
2
3
6
0.00E+00
1.00E+01
0
0.01
0.015
5
25
20
15
10
30
VDS, DRAINTOSOURCE VOLTAGE (V)
10
20
40
2.5
3
VGS = 0 V
TJ = 150
C
TJ = 100
C
ID = 18.5 A
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
TJ = 25
C
ID = 10 A
TJ = 25
C
VDS > = 10 V
TJ = 25
C
TJ = 55
C
TJ = 100
C
VGS = 10 V
VGS = 7 V
VGS = 5 V
VGS = 4.6 V
VGS = 4 V
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE
(NORMALIZED)
VGS = 4.4 V
VGS = 3.8 V
VGS = 3.4 V
VGS = 3.2 V
VGS = 3.0 V
TJ = 25
C
50
25
4
5
VGS = 2.8 V
0.5
2.00E+01
3.00E+01
4.00E+01
5.00E+01
6.00E+01
NTD4302
http://onsemi.com
5
VGS
VDS
5
10
7.5
0
12.5
10
10
4000
20
10
0
C, CAP
ACIT
ANCE (pF)
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
V
GS
, GA
TET
OSOURCE VOL
T
AGE (V)
1
1000
100
10
10
100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCETODRAIN VOLTAGE (V)
I S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
6000
0
10
60
0.5
0.9
0.8
0.7
0.6
1
15
5
0
20
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
2000
3000
5000
30
2.5
ID = 2 A
TJ = 25
C
Q2
Q1
VGS
QT
VDD = 24 V
ID = 18.5 A
VGS = 10 V
tr
td(off)
td(on)
tf
VGS = 0 V
TJ = 25
C
VGS = 0 V
VDS = 0 V
TJ = 25
C
Crss
Ciss
Coss
Crss
Ciss
20
30
40
50
1000
VD
15
25
20
0
30
10
V
DS
, DRAINT
OSOURCE VOL
T
AGE (V)