Semiconductor Components Industries, LLC, 2006
April, 2006 - Rev. 1
1
Publication Order Number:
NTD4806N/D
NTD4806N
Power MOSFET
30 V, 76 A, Single N-Channel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
"
20
V
Continuous Drain
Current (R
q
JA
) (Note 1)
Steady
State
T
A
= 25
C
I
D
14
A
T
A
= 85
C
11
Power Dissipation
(R
q
JA
) (Note 1)
T
A
= 25
C
P
D
2.14
W
Continuous Drain
Current (R
q
JA
) (Note 2)
T
A
= 25
C
I
D
11
A
T
A
= 85
C
8.8
Power Dissipation
(R
q
JA
) (Note 2)
T
A
= 25
C
P
D
1.33
W
Continuous Drain
Current (R
q
JC
)
(Note 1)
T
C
= 25
C
I
D
76
A
T
C
= 85
C
59
Power Dissipation
(R
q
JC
) (Note 1)
T
C
= 25
C
P
D
60
W
Pulsed Drain Current
t
p
=10
m
s
T
A
= 25
C
I
DM
150
A
Current Limited by Package
T
A
= 25
C
I
DmaxPkg
45
A
Operating Junction and Storage Temperature
T
J
, T
stg
-55 to
175
C
Source Current (Body Diode)
I
S
50
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
L = 1.0 mH, I
L(pk)
= 21 A, R
G
= 25
W
)
E
AS
220
mJ
Lead Temperature for Soldering Purposes
(1/8
from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
CASE 369C
DPAK
(Bend Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
CASE 369D
DPAK
(Straight Lead)
STYLE 2
30 V
6.0 m
W
@ 10 V
R
DS(on)
MAX
76 A
I
D
MAX
V
(BR)DSS
9.4 m
W
@ 4.5 V
http://onsemi.com
1 2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
N-Channel
D
S
G
YWW
48
06NG
1
Gate
2
Drain 3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
48
06NG
YWW
48
06NG
Y
= Year
WW
= Work Week
4806N = Device Code
G
= Pb-Free Package
NTD4806N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
q
JC
2.5
C/W
Junction-to-Tab (Drain)
R
q
JC-TAB
3.5
Junction-to-Ambient - Steady State (Note 1)
R
q
JA
70
Junction-to-Ambient - Steady State (Note 2)
R
q
JA
113
1. Surface-mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
27
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
C
1.0
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
"
20 V
"
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.5
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
6.0
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 to 11.5 V
I
D
= 30 A
4.9
6.0
m
W
I
D
= 15 A
4.8
V
GS
= 4.5 V
I
D
= 30 A
7.9
9.4
I
D
= 15 A
7.5
Forward Transconductance
gFS
V
DS
= 15 V, I
D
= 15 A
14
S
CHARGES AND CAPACITANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 12 V
2142
pF
Output Capacitance
C
oss
480
Reverse Transfer Capacitance
C
rss
251
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A
15
23
nC
Threshold Gate Charge
Q
G(TH)
3.0
Gate-to-Source Charge
Q
GS
7.0
Gate-to-Drain Charge
Q
GD
7.0
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A
37
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
W
18
ns
Rise Time
t
r
205
Turn-Off Delay Time
t
d(off)
15
Fall Time
t
f
14
Turn-On Delay Time
t
d(on)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
W
9.0
ns
Rise Time
t
r
89
Turn-Off Delay Time
t
d(off)
25
Fall Time
t
f
6.0
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4806N
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3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25
C
0.9
1.2
V
T
J
= 125
C
0.8
Reverse Recovery Time
t
RR
V
GS
= 0 V, dIs/dt= 100 A/
m
s,
I
S
= 30 A
26
ns
Charge Time
ta
13
Discharge Time
tb
13
Reverse Recovery Time
Q
RR
16
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25
C
2.49
nH
Drain Inductance, DPAK
L
D
0.0164
Drain Inductance, IPAK
L
D
1.88
Gate Inductance
L
G
3.46
Gate Resistance
R
G
1.0
W
NTD4806N
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4
TYPICAL PERFORMANCE CURVES
4 V
10 V
50
0.015
60
0.005
0
90
1.5
1.0
0.5
0
10,000
100,000
0
5
30
2
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
,
DRAIN CURRENT (AMPS)
3
0.048
4
0.023
0.013
0.003
5
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
-50
50
25
0
-25
75
125
100
2
3
15
10
25
5
3
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 125
C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 175
C
T
J
= 125
C
40
0
160
80
4
5
T
J
= 25
C
20
10
5 V
3.2 V
6 V
2.0
6
1000
4
90
1
0
120
6
10
0.033
70
0.010
80
4.2 V
4.5 V
3.4 V
3.6 V
3.8 V
100
40
10
20
60
80
70
30
150
70
110
20
140
60
100
10
130
50
90
I
D
= 30 A
T
J
= 25
C
7
8
9
0.008
0.018
0.028
0.043
0.038
55
65
75
85
V
GS
= 11.5 V
150
100
NTD4806N
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5
TYPICAL PERFORMANCE CURVES
C
rss
10
0
10
15
25
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
1000
0
V
GS
V
DS
2000
5
5
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
iss
C
oss
C
rss
C
iss
3000
4000
V
GS
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
V
GS
, GA
TE-T
O-SOURCE
VOL
T
AGE
(VOL
TS
)
0
2
0
Q
G
, TOTAL GATE CHARGE (nC)
8
4
10
5
I
D
= 30 A
V
GS
= 4.5 V
T
J
= 25
C
Q
2
Q
1
Q
T
20
15
0
0.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I S
, SOURCE CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1000
1
t, TIME
(ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8
0.9
20
30
25
T
J
= 25
C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.1
1000
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
1 ms
100
m
s
10 ms
dc
10
m
s
20
6
1
100
0
25
T
J
, JUNCTION TEMPERATURE (
C)
I
D
= 21 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
50
100
150
100
125
200
250
EAS,
SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
150
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