Semiconductor Components Industries, LLC, 2006
April, 2006 - Rev. 0
1
Publication Order Number:
NTD4808N/D
NTD4808N
Power MOSFET
30 V, 63 A, Single N-Channel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25
C
I
D
12
A
T
A
= 85
C
9.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25
C
P
D
2.0
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25
C
ID
9.8
A
T
A
= 85
C
7.5
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25
C
P
D
1.3
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25
C
I
D
63
A
T
C
= 85
C
49
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25
C
P
D
54.6
W
Pulsed Drain
Current
t
p
=10
m
s
T
A
= 25
C
I
DM
126
A
Current Limited by Package
T
A
= 25
C
I
DmaxPkg
45
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+175
C
Source Current (Body Diode)
I
S
45
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 17 A
pk
, L = 1.0 mH, R
G
= 25
W)
EAS
144.5
mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
8.0 m
W
@ 10 V
63 A
12.4 m
W
@ 4.5 V
G
S
N-CHANNEL MOSFET
D
1 2
3
4
DPAK
CASE 369C
STYLE 2
3 IPAK
(STRAIGHT LEAD)
CASE 369AC
DPAK
CASE 369D
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
YWW
48
08NG
1
Gate
2
Drain 3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
48
08NG
YWW
48
08NG
Y
= Year
WW
= Work Week
4808N = Device Code
G
= Pb-Free Package
1
2
3
4
1
2
3
4
NTD4808N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
q
JC
2.75
C/W
Junction-to-TAB (Drain)
R
q
JC-TAB
3.5
Junction-to-Ambient Steady State (Note 1)
R
q
JA
73.5
Junction-to-Ambient Steady State (Note 2)
R
q
JA
116
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
27
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
C
1
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.5
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.6
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 to 11.5 V
I
D
= 30 A
6.7
8.0
m
W
I
D
= 15 A
6.6
V
GS
= 4.5 V
I
D
= 30 A
10.3
12.4
I
D
= 15 A
9.8
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
11.4
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1538
pF
Output Capacitance
C
OSS
334
Reverse Transfer Capacitance
C
RSS
180
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
11.3
13
nC
Threshold Gate Charge
Q
G(TH)
1.6
Gate-to-Source Charge
Q
GS
4.9
Gate-to-Drain Charge
Q
GD
4.9
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
26
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
= 3.0
W
13
ns
Rise Time
t
r
102
Turn-Off Delay Time
t
d(OFF)
11
Fall Time
t
f
5.6
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4808N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
W
6.2
ns
Rise Time
t
r
19.8
Turn-Off Delay Time
t
d(OFF)
19.3
Fall Time
t
f
3.0
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25
C
0.93
1.2
V
T
J
= 125
C
0.83
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/
m
s,
I
S
= 30 A
2.0
ns
Charge Time
t
a
10.4
Discharge Time
t
b
9.6
Reverse Recovery Charge
Q
RR
9.7
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25
C
2.49
nH
Drain Inductance, DPAK
L
D
0.0164
Drain Inductance, IPAK
L
D
1.88
Gate Inductance
L
G
3.46
Gate Resistance
R
G
1.1
W
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4808N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
5.5 V to 10 V
10
0.020
30
0.002
0
60
1.5
1.2
0.9
0.6
1000
10000
0
5
30
2
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
,
DRAIN CURRENT (AMPS)
5.5
10
6.5
7.6
6.8
6.0
5
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(m
W
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
-50
50
25
0
-25
75
125
100
2
3
15
10
30
5
3
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 125
C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 150
C
T
J
= 125
C
40
0
80
4
5
T
J
= 25
C
20
10
3.2 V
1.8
100
4
90
1
6
10
8.4
40
0.010
50
3 V
4.5 V
3.4 V
3.6 V
3.8 V
100
40
10
20
60
80
70
30
70
20
60
10
50
I
D
= 30 A
T
J
= 25
C
7
8
9
6.4
7.2
8.0
9.2
8.8
25
35
45
55
V
GS
= 11.5 V
150
0.1
T
J
= 25
C
9.6
7.5
8.5
9.5
10.5 11 11.5
0.004
0.006
0.008
0.018
0.016
0.014
0.012
20
15
1.4
1.1
0.8
1.7
1.3
1.0
0.7
1.6
25
1
T
J
= 25
C
NTD4808N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
0
10
15
25
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
500
0
1000
5
T
J
= 25
C
C
oss
C
iss
1500
2000
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
V
GS
, GA
TE-T
O-SOURCE
VOL
T
AGE
(VOL
TS
)
0
1
0
Q
G
, TOTAL GATE CHARGE (nC)
5
2
10
1
V
DD
= 15 V
V
GS
= 4.5 V
I
D
= 30 A
T
J
= 25
C
Q
2
Q
1
Q
T
12
11
0
0.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I S
, SOURCE CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1
t, TIME
(ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8
0.9
20
30
25
T
J
= 25
C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1000
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
1 ms
100
m
s
10 ms
dc
10
m
s
20
3
1
100
0
T
J
, JUNCTION TEMPERATURE (
C)
I
D
= 17 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
20
40
60
100
125
80
100
EAS,
SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
150
4
2
3
4
5
6
7
8
9
10
30
50
70
90
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