Semiconductor Components Industries, LLC, 2006
May, 2006 - Rev. 1
1
Publication Order Number:
NTD4813N/D
NTD4813N
Power MOSFET
30 V, 40 A, Single N-Channel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
High Side Switching
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25
C
I
D
9.0
A
T
A
= 85
C
7.0
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25
C
P
D
1.94
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25
C
ID
7.6
A
T
A
= 85
C
5.9
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25
C
P
D
1.27
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25
C
I
D
40
A
T
C
= 85
C
31
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25
C
P
D
35.3
W
Pulsed Drain
Current
t
p
=10
m
s
T
A
= 25
C
I
DM
90
A
Current Limited by Package
T
A
= 25
C
I
DmaxPkg
35
A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-55 to
+175
C
Source Current (Body Diode)
I
S
29
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 12 A
pk
, L = 1.0 mH, R
G
= 25
W)
EAS
72
mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
13 m
W
@ 10 V
40 A
24 m
W
@ 4.5 V
G
S
N-CHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
YWW
48
13NG
1
Gate
2
Drain 3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
48
13NG
YWW
48
13NG
Y
= Year
WW
= Work Week
4813N = Device Code
G
= Pb-Free Package
CASE 369C
DPAK
(Bend Lead)
STYLE 2
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1 2
3
4
1
2
3
4
CASE 369AC
3 IPAK
(Straight Lead)
1
2
3
4
NTD4813N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
q
JC
4.25
C/W
Junction-to-TAB (Drain)
R
q
JC-TAB
3.5
Junction-to-Ambient Steady State (Note 1)
R
q
JA
77.5
Junction-to-Ambient Steady State (Note 2)
R
q
JA
118.5
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
24.5
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
C
1
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.5
2.5
V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
5.4
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
10.9
13
m
W
I
D
= 15 A
10.3
V
GS
= 4.5 V
I
D
= 30 A
18.6
24
I
D
= 15 A
17.1
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 10 A
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
860
pF
Output Capacitance
C
OSS
201
Reverse Transfer Capacitance
C
RSS
115
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
6.9
7.9
nC
Threshold Gate Charge
Q
G(TH)
1.2
Gate-to-Source Charge
Q
GS
3.1
Gate-to-Drain Charge
Q
GD
3.6
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
15.6
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
= 3.0
W
11
ns
Rise Time
t
r
241
Turn-Off Delay Time
t
d(OFF)
8.7
Fall Time
t
f
4.8
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4813N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0
W
5.0
ns
Rise Time
t
r
48
Turn-Off Delay Time
t
d(OFF)
17
Fall Time
t
f
2.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25
C
0.8
1.2
V
T
J
= 125
C
0.9
Reverse Recovery Time
t
RR
V
GS
= 0 V, dIs/dt = 100 A/
m
s,
I
S
= 30 A
16
ns
Charge Time
t
a
10
Discharge Time
t
b
5.6
Reverse Recovery Charge
Q
RR
7.0
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25
C
2.49
nH
Drain Inductance, DPAK
L
D
0.0164
Drain Inductance, IPAK
L
D
1.88
Gate Inductance
L
G
3.46
Gate Resistance
R
G
2.5
W
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4813N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
10 V
10
0.042
30
0.012
0.002
60
1.4
1.0
0.6
10,000
100,000
0
5
30
2
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
,
DRAIN CURRENT (AMPS)
0.030
4
0.018
0.014
0.010
5
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-to-Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
-50
50
25
0
-25
75
125
100
2
3
15
10
30
5
3
V
DS
10 V
T
J
= 25
C
T
J
= -55
C
T
J
= 125
C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 150
C
T
J
= 125
C
40
0
4
5
T
J
= 25
C
20
10
5 V
3 V
6 V
1.8
6
1000
4
1
7
6
11
0.022
40
0.022
50
4.5 V
3.6 V
3.8 V
40
10
20
60
30
20
60
10
50
I
D
= 30 A
T
J
= 25
C
7
8
9
0.012
0.016
0.020
0.026
0.024
25
35
45
55
V
GS
= 11.5 V
150
100
T
J
= 25
C
0.032
15
20
0.028
10
0.017
0.007
0.027
0.037
1.5
1.1
0.7
1.6
1.2
0.8
1.7
1.3
0.9
25
T
J
= 25
C
0.029
0.017
0.013
0.021
0.011
0.015
0.019
0.025
0.023
0.027
4.5
5.5
6.5
11.5
7.5
8.5
9.5
10.5
NTD4813N
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5
TYPICAL PERFORMANCE CURVES
C
rss
0
10
15
25
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
Figure 7. Capacitance Variation
400
0
800
5
T
J
= 25
C
C
oss
C
iss
600
1000
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
V
GS
, GA
TE-T
O-SOURCE
VOL
T
AGE
(VOL
TS
)
0
3
0
Q
G
, TOTAL GATE CHARGE (nC)
15
6
6
5
I
D
= 30 A
V
DD
= 15 V
V
GS
= 11.5 V
T
J
= 25
C
Q
2
Q
T
7
0
0.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I S
, SOURCE CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1
10
100
1
t, TIME
(ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.6
0.7
1.0
5
10
15
t
r
t
d(off)
t
d(on)
t
f
10
V
DD
= 15 V
I
D
= 30 A
V
GS
= 11.5 V
0.8
0.9
20
30
25
T
J
= 25
C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1000
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25
C
1 ms
100
m
s
10 ms
dc
10
m
s
20
9
1
100
0
25
T
J
, JUNCTION TEMPERATURE (
C)
I
D
= 12 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
175
20
60
80
100
125
EAS,
SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
150
200
40
300
700
500
900
100
12
3
2
4
1
Q
1
10
50
70
30
8
9 10 11 12 13 14 15 16
1.5
13.5
4.5
7.5
10.5
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