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Semiconductor Components Industries, LLC, 2004
December, 2004 - Rev. 4
1
Publication Order Number:
NTD80N02/D
NTD80N02
Power MOSFET
24 V, 80 A, N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb-Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
24
Vdc
Gate-to-Source Voltage - Continuous
V
GS
20
Vdc
Drain Current - Continuous @ T
C
= 25
C
Drain Current
- Single Pulse (t
p
= 10
m
s)
I
D
I
DM
80*
200
Adc
Total Power Dissipation @ T
C
= 25
C
P
D
75
Watts
Operating and Storage
Temperature Range
T
J
, T
stg
- 55 to
150
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
)
E
AS
733
mJ
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
R
JC
R
JA
R
JA
1.65
67
120
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
*Chip current capability limited by package.
Y
= Year
WW
= Work Week
80N02
= Device Code
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
1
Gate
YWW
80
N02
YWW
80
N02
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
1 2
3
4
CASE 369D
DPAK
(Straight Lead)
STYLE 2
24 V
5.0 m
W
R
DS(on)
TYP
80 A
I
D
MAX
V
(BR)DSS
N-Channel
D
S
G
1 2
3
4
CASE 369C
DPAK
(Surface Mount)
STYLE 2
NTD80N02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
m
Adc)
Positive Temperature Coefficient
V
(BR)DSS
24
-
27
25
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 24 Vdc)
(V
GS
= 0 Vdc, V
DS
= 24 Vdc, T
J
= 125
C)
I
DSS
-
-
-
-
1.0
10
m
Adc
Gate-Body Leakage Current (V
GS
=
20 Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
m
Adc)
Negative Threshold Temperature Coefficient
V
GS(th)
1.0
-
1.9
-3.8
3.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 80 Adc)
(V
GS
= 4.5 Vdc, I
D
= 40 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 20 Adc)
R
DS(on)
-
-
-
5.0
7.5
5.0
7.5
5.8
9.0
5.8
9.0
m
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc) (Note 3)
g
FS
-
20
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc,
C
iss
-
2250
2600
pF
Output Capacitance
(V
DS
= 20 Vdc,
V
GS
= 0 V,
C
oss
-
900
1100
Transfer Capacitance
V
GS
0 V,
f = 1.0 MHz)
C
rss
-
400
525
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
(V
GS
= 4 5 Vdc
t
d(on)
-
17
30
ns
Rise Time
(V
GS
= 4.5 Vdc,
V
DD
= 20 Vdc,
t
r
-
67
125
Turn-Off Delay Time
V
DD
= 20 Vdc,
I
D
= 20 Adc,
R
2 5
)
t
d(off)
-
28
45
Fall Time
D
R
G
= 2.5
)
t
f
-
40
75
Gate Charge
(V
GS
= 4.5 Vdc,
Q
T
-
30
42
nC
Ga e C a ge
(V
GS
= 4.5 Vdc,
I
D
= 20 Adc,
Q1
-
7.0
12
I
D
20 Adc,
V
DS
= 20 Vdc) (Note 3)
Q2
-
18
28
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 40 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 150
C)
V
SD
-
-
-
0.92
1.05
0.70
1.2
-
-
Vdc
Reverse Recovery Time
(I
20 Ad
V
0 Vd
t
rr
-
38
52
ns
e e se
eco e y
e
(I
S
= 20 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
m
s) (Note 3)
t
a
-
20
-
s
dI
S
/dt = 100 A/
m
s) (Note 3)
t
b
-
18
-
Reverse Recovery Stored Charge
Q
rr
-
0.038
-
m
C
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD80N02
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3
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
8 V
5.2 V
0.015
0.01
0.0075
0.0025
0
10
1
100
1000
0.005
0
30
2
1.5
1
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.07
0.05
0.02
0.01
4
0
2
6
8
10
Figure 3. On-Resistance versus
Gate-To-Source Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6. Drain-To-Source Leakage
Current versus Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
50
-50
100
75
0
-25
125
150
2
3
6
55
0
0.01
0.015
4
16
12
8
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
10
20
40
2.5
3
V
GS
= 0 V
T
J
= 125
C
T
J
= 100
C
I
D
= 80 A
V
DS
= 10 V
V
GS
= 4.5 V
V
GS
= 10 V
T
J
= 25
C
I
D
= 10 A
T
J
= 25
C
V
DS
24 V
T
J
= 25
C
T
J
= -55
C
T
J
= 125
C
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE (
)
R
DS(on)
, DRAIN-T
O-SOURCE RESIST
ANCE
T
J
= 25
C
50
25
4
5
0.5
4
3.5
V
GS
= 3.0 V
4.2 V
3.2 V
3.4 V
3.6 V
3.8 V
4 V
4.4 V
4.6 V
5 V
0.04
0.03
0.06
60
65
70
75
80
60
90
80
100
70
4.8 V
6 V
6.5 V
9 V
0
0.0125
0.005
I
D
= 80 A
V
DS
= 4.5 V
0.1
0.01
T
J
= 25
C
NTD80N02
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4
10
20
30
40
50
60
70
80
0.55
0.60 0.65
0.70 0.75 0.80
0.85 0.90 0.95 1.00
-8 -6 -4 -2 0
2
4
6
8
10 12 14 16 18 20 22 24
V
GS
V
DS
4
8
6
0
10
2000
C, CAP
ACIT
ANCE (pF)
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
1
1000
100
1
10
100
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
R
G
, GATE RESISTANCE (
)
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
5000
0
10
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
1000
4000
2
I
D
= 1.0 A
T
J
= 25
C
Q
2
Q
1
V
GS
Q
T
V
DD
= 20 V
I
D
= 20 A
V
GS
= 10 V
t
r
t
d(off)
t
d(on)
t
f
V
GS
= 0 V
T
J
= 25
C
V
GS
= 0 V
T
J
= 25
C
C
rss
C
iss
C
oss
20
30
40
50
V
D
8
24
16
0
28
4
-V
DS
, DRAIN-T
O-SOURCE VOL
T
AGE (V)
12
20
3000
10
NTD80N02
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5
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
dc
1
100
100
10
10 ms
1 ms
100 ms
V
GS
= 10 V
SINGLE PULSE
T
C
= 25
C
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
Figure 12. Diode Reverse Recovery Waveform
R
JA
(t) = r(t) R
JA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
A
= P
(pk)
R
JA
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 13. Thermal Response - Various Duty Cycles
t, TIME (seconds)
Rthja(t)
, EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
1000
1
D = 0.5
1E-05
1E-03
1E-02
1E-01
0.2
0.01
0.01
0.02
0.05
0.1
1E+00
1E+01
1E+03
SINGLE PULSE
1E-04
1E+02
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
DUTY CYCLE
100
10
0.1
ORDERING INFORMATION
Order Number
Package
Shipping
NTD80N02
DPAK-3
75 Units / Rail
NTD80N02G
DPAK-3
(Pb-Free)
75 Units / Rail
NTD80N02T4
DPAK-3
2500 / Tape & Reel
NTD80N02T4G
DPAK-3
(Pb-Free)
2500 / Tape & Reel
NTD80N02-001
DPAK-3 Straight Lead
75 Units / Rail
NTD80N02-1G
DPAK-3 Straight Lead
(Pb-Free)
75 Units / Rail
NTD80N02-032
DPAK-3 Straight Lead
(3.2
0.5 mm)
75 Units / Rail
NTD80N02-032G
DPAK-3 Straight Lead
(3.2
0.5 mm)
(Pb-Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
NTD80N02
http://onsemi.com
6
PACKAGE DIMENSIONS
D
A
B
R
V
S
F
L
2 PL
M
0.13 (0.005)
T
E
C
U
J
-T-
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.22
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.025
0.035
0.63
0.88
E
0.018
0.024
0.46
0.61
F
0.033
0.045
0.83
1.14
J
0.018
0.023
0.46
0.58
L
0.090 BSC
2.29 BSC
R
0.180
0.215
4.57
5.45
S
0.025
0.040
0.63
1.01
U
0.020
---
0.51
---
V
0.035
0.050
0.89
1.27
Z
0.155
---
3.93
---
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
DPAK
CASE 369AA-01
ISSUE O
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD80N02
http://onsemi.com
7
PACKAGE DIMENSIONS
DPAK
CASE 369C-01
ISSUE O
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
D
A
K
B
R
V
S
F
L
G
2 PL
M
0.13 (0.005)
T
E
C
U
J
H
-T-
SEATING
PLANE
Z
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.22
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.180 BSC
4.58 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.102
0.114
2.60
2.89
L
0.090 BSC
2.29 BSC
R
0.180
0.215
4.57
5.45
S
0.025
0.040
0.63
1.01
U
0.020
---
0.51
---
V
0.035
0.050
0.89
1.27
Z
0.155
---
3.93
---
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244
3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD80N02
http://onsemi.com
8
PACKAGE DIMENSIONS
DPAK
CASE 369D-01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
1
2
3
4
V
S
A
K
-T-
SEATING
PLANE
R
B
F
G
D
3 PL
M
0.13 (0.005)
T
C
E
J
H
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.235
0.245
5.97
6.35
B
0.250
0.265
6.35
6.73
C
0.086
0.094
2.19
2.38
D
0.027
0.035
0.69
0.88
E
0.018
0.023
0.46
0.58
F
0.037
0.045
0.94
1.14
G
0.090 BSC
2.29 BSC
H
0.034
0.040
0.87
1.01
J
0.018
0.023
0.46
0.58
K
0.350
0.380
8.89
9.65
R
0.180
0.215
4.45
5.45
S
0.025
0.040
0.63
1.01
V
0.035
0.050
0.89
1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z
0.155
---
3.93
---
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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NTD80N02/D
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