Publication Order Number:
NTF3055L175/D
Semiconductor Components Industries, LLC, 2004
February, 2004 - Rev. 2
1
NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
N-Channel SOT-223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb-Free Packages are Available
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
60
Vdc
Drain-to-Gate Voltage (R
GS
= 1.0 M
W
)
V
DGR
60
Vdc
Gate-to-Source Voltage
- Continuous
- Non-repetitive (t
p
10 ms)
V
GS
15
20
Vdc
Vpk
Drain Current
- Continuous @ T
A
= 25
C
- Continuous @ T
A
= 100
C
- Single Pulse (t
p
10
m
s)
I
D
I
D
I
DM
2.0
1.2
6.0
Adc
Apk
Total Power Dissipation @ T
A
= 25
C (Note 1)
Total Power Dissipation @ T
A
= 25
C (Note 2)
Derate above 25
C
P
D
2.1
1.3
0.014
W
W
W/
C
Operating and Storage Temperature Range
T
J
, T
stg
- 55
to 175
C
Single Pulse Drain-to-Source Avalanche
Energy - Starting T
J
= 25
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 3.6 A, L = 10 mH, V
DS
= 60 Vdc)
E
AS
65
mJ
Thermal Resistance
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
R
q
JA
R
q
JA
72.3
114
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
T
L
260
C
1. When surface mounted to an FR4 board using 1
pad size, 1 oz. (Cu. Area
0.995 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2-2.4 oz. (Cu. Area 0.272 in
2
).
D
G
S
1
2
3
4
2.0 A, 60 V
R
DS(on)
= 175 m
W
N-Channel
SOT-223
CASE 318E
STYLE 3
LWW
MARKING DIAGRAM
5L175
5L175
= Device Code
L
= Location Code
WW
= Work Week
PIN ASSIGNMENT
3
2
1
4
Gate
Drain Source
Drain
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Preferred devices are recommended choices for future
use and best overall value.
NTF3055L175
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
(Note 3)
(V
GS
= 0 Vdc,
I
D
= 250
m
Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
-
72.8
74.4
-
-
Vdc
mV/
C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150
C)
I
DSS
-
-
-
-
1.0
10
m
Adc
Gate-Body Leakage Current
(V
GS
=
15 Vdc, V
DS
= 0 Vdc)
I
GSS
-
-
100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(Note 3)
(V
DS
= V
GS
,
I
D
= 250
m
Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
-
1.7
4.2
2.0
-
Vdc
mV/
C
Static Drain-to-Source On-Resistance
(Note 3)
(V
GS
= 5.0 Vdc, I
D
= 1.0 Adc)
R
DS(on)
-
155
175
m
W
Static Drain-to-Source On-Resistance
(Note 3)
(V
GS
= 5.0 Vdc, I
D
= 2.0 Adc)
(V
GS
= 5.0 Vdc, I
D
= 1.0 Adc, T
J
= 150
C)
V
DS(on)
-
0.32
0.57
0.42
-
Vdc
Forward Transconductance
(Note 3)
(V
DS
= 8.0 Vdc, I
D
= 1.5 Adc)
g
fs
-
3.2
-
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 V
C
iss
-
194
270
pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
oss
-
70
100
Transfer Capacitance
f = 1.0 MHz)
C
rss
-
29
40
SWITCHING CHARACTERISTICS
(Note 4)
Turn-On Delay Time
t
d(on)
-
10.2
20
ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 2.0 Adc,
V
GS
= 5 0 Vdc
t
r
-
21
40
Turn-Off Delay Time
V
GS
= 5.0 Vdc,
R
G
= 9.1
W
) (Note 3)
t
d(off)
-
14.3
30
Fall Time
R
G
9.1
W
) (Note 3)
t
f
-
15.3
30
Gate Charge
(V
48 Vd
I
2 0 Ad
Q
T
-
5.1
10
nC
(V
DS
= 48 Vdc, I
D
= 2.0 Adc,
V
GS
= 5.0 Vdc) (Note 3)
Q
1
-
1.4
-
V
GS
= 5.0 Vdc) (Note 3)
Q
2
-
2.5
-
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage
(I
S
= 2.0 Adc, V
GS
= 0 Vdc)
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
T
J
= 150
C) (Note 3)
V
SD
-
-
0.84
0.68
1.0
-
Vdc
Reverse Recovery Time
t
rr
-
28.3
-
ns
(I
S
= 2.0 Adc, V
GS
= 0 Vdc,
t
a
-
15.6
-
(I
S
2.0 Adc, V
GS
0 Vdc,
dI
S
/dt = 100 A/
m
s) (Note 3)
t
b
-
12.7
-
Reverse Recovery Stored Charge
Q
RR
-
0.027
-
m
C
3. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
NTF3055L175
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3
0
0.5
2
3.5
2.5
1.5
1
3
4
0
0.5
2
3.5
2.5
1.5
1
3
4
0.8
2.8
0
3.2
2
0.4
1.2
1.6
2.4
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance versus
Gate-to-Source Voltage
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current
versus Voltage
V
GS,
GATE-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
T
J
= 25
C
T
J
= 100
C
T
J
= -55
C
0.28
0.24
0.2
0.16
0.12
0
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN-T
O-SOURCE RESIST
ANCE (
W
)
V
GS
= 10 V
2
1.8
1.6
1.4
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(on),
DRAIN-T
O-SOURCE RESIST
ANCE (NORMALIZED)
-50
50
25
0
-25
75
125
100
I
D
= 1 A
V
GS
= 5 V
0.8
0.6
150
1
10
1000
V
DS,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
0
40
60
30
20
10
50
100
0
0.8
2.0
2.8
1.6
0.8
V
DS,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0
0.4
3.2
V
GS
= 5 V
V
GS
= 2.5 V
V
GS
= 5 V
V
GS
= 3 V
1.6
0.4
1.2
2.0
1
4.2
1.8
3.4
1.4
2.2
2.6
3
3.8
0.08
0.04
1.2
1.2
0.28
0.24
0.2
0.16
0.12
0
0.08
0.04
1
175
V
GS
= 3.5 V
V
GS
= 4 V
T
J
= 150
C
T
J
= 100
C
T
J
= 25
C
T
J
= 25
C
T
J
= 100
C
T
J
= -55
C
V
DS
10 V
V
GS
= 0 V
2.4
2.8
2.4
T
J
= 125
C
NTF3055L175
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4
10
10
15
5
0
20
5
25
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
100
1
0.1
0.001
100
10
1
7
5
4
3
2
1
0
60
20
10
0
2
0
700
500
400
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE
(VOLTS)
C, CAP
ACIT
ANCE (pF)
300
200
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (VOL
TS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (
W
)
Figure 10. Diode Forward Voltage versus Current
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (
C)
I
D
, DRAIN CURRENT (AMPS)
E
AS
, SINGLE PULSE DRAIN-T
O-SOURCE
A
V
ALANCHE ENERGY (mJ)
0
5
4
2
6
1
10
100
0.6
0.72
0.68
0.64
0.84
0.1
10
100
1
25
125
150
100
75
175
50
I
D
= 2 A
T
J
= 25
C
V
GS
V
GS
= 0 V
V
DS
= 0 V
T
J
= 25
C
C
rss
C
iss
C
oss
C
rss
1.6
1.2
0.76
0.8
C
iss
V
GS
= 15 V
SINGLE PULSE
T
C
= 25
C
V
DS
= 30 V
I
D
= 2 A
V
GS
= 5 V
V
GS
= 0 V
T
J
= 25
C
I
D
= 6 A
1 ms
100
m
s
10 ms
dc
t
r
t
d(off)
t
d(on)
V
DS
0.88
0.01
30
40
50
Q
2
Q
1
Q
T
70
0
3
1
0.8
0.4
t
f
100
600
6
10
10
m
s
NTF3055L175
http://onsemi.com
5
100
0.1
100
10
1
0.1
0.001
1000
r(t), EFFECTIVE TRANSIENT THERMAL
RESIST
ANCE (NORMALIZED)
t, TIME (s)
Figure 13. Thermal Response
10
1
0.01
0.0001
0.00001
TEST TYPE > MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
< DIE SIZE 56 X 56 MILS
R
qJC
= MIN PAD 1 OZ
(Cu Area = 0.272 sq in)
C/W
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
ORDERING INFORMATION
Device
Package
Shipping
NTF3055L175T1
SOT-223 (TO-261)
1000 / Tape & Reel
NTF3055L175T1G
SOT-223 (TO-261)
(Pb-Free)
1000 / Tape & Reel
NTF3055L175T3
SOT-223 (TO-261)
4000 / Tape & Reel
NTF3055L175T3G
SOT-223 (TO-261)
(Pb-Free)
4000 / Tape & Reel
NTF3055L175T3LF
SOT-223 (TO-261)
4000 / Tape & Reel
NTF3055L175T3LFG
SOT-223 (TO-261)
(Pb-Free)
4000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTF3055L175
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6
PACKAGE DIMENSIONS
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
H
S
F
A
B
D
G
L
4
1
2
3
0.08 (0003)
C
M
K
J
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.249
0.263
6.30
6.70
INCHES
B
0.130
0.145
3.30
3.70
C
0.060
0.068
1.50
1.75
D
0.024
0.035
0.60
0.89
F
0.115
0.126
2.90
3.20
G
0.087
0.094
2.20
2.40
H 0.0008 0.0040
0.020
0.100
J
0.009
0.014
0.24
0.35
K
0.060
0.078
1.50
2.00
L
0.033
0.041
0.85
1.05
M
0
10
0
10
S
0.264
0.287
6.70
7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
_
_
_
_
SOT-223 (TO-261)
CASE 318E-04
ISSUE K
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.5
0.059
SOT-223
mm
inches
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NTF3055L175/D
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