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Электронный компонент: NTGS4111P

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Semiconductor Components Industries, LLC, 2004
April, 2004 - Rev. 0
1
Publication Order Number:
NTGS4111P/D
NTGS4111P
Power MOSFET
-30 V, -4.7 A, Single P-Channel, TSOP-6
Features
Leading -30 V Trench Process for Low R
DS(on)
Low Profile Package Suitable for Portable Applications
Surface Mount TSOP-6 Package Saves Board Space
Pb-Free Package Available (G Suffix)
Improved Efficiency for Battery Applications
Applications
Battery Management and Switching
Load Switching
Battery Protection
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
-30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
C
I
D
-3.7
A
Current (Note 1)
State
T
A
= 85
C
-2.7
t
5 s
T
A
= 25
C
-4.7
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
C
P
D
1.25
W
t
5 s
2.0
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
C
I
D
-2.6
A
Current (Note 2)
State
T
A
= 85
C
-1.9
Power Dissipation
(Note 2)
T
A
= 25
C
P
D
0.63
W
Pulsed Drain Current
tp
= 10
m
s
I
DM
-15
A
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Source Current (Body Diode)
I
S
-1.7
A
Lead Temperature for Soldering Purposes
(1/8
from case for 10 s)
T
L
260
C
THERMAL RESISTANCE RATINGS
Rating
Symbol
Max
Unit
Junction-to-Ambient Steady State (Note 1)
R
JA
100
C/W
Junction-to-Ambient t
5 s (Note 1)
R
JA
62.5
Junction-to-Ambient Steady State (Note 2)
R
JA
200
1. Surface-mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.006 in sq).
1 2 5 6
3
P-Channel
TSOP-6
CASE 318G
STYLE 1
W
MARKING
DIAGRAM
TG
TG
= Device Code
W
= Work Week
PIN ASSIGNMENT
3
Gate
1
Drain
Source
4
6
5
4
1
2
3
2
Drain
Drain
5
Drain
6
4
Drain
Gate
Source
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Device
Package
Shipping
ORDERING INFORMATION
NTGS4111PT1
TSOP-6
3000/Tape & Reel
NTGS4111PT1G
TSOP-6
(Pb-Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
-30 V
68 m
W
@ -4.5 V
38 m
W
@ -10 V
R
DS(on)
TYP
-4.7 A
I
D
MAX
V
(BR)DSS
NTGS4111P
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2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= -250
m
A
-30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
-17
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
T
J
= 25
C
-1.0
m
A
V
GS
= 0 V,
V
DS
= -24 V
T
J
= 125
C
-100
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= -250
m
A
-1.0
-3.0
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.0
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= -10 V, I
D
= -3.7 A
38
60
m
W
(
)
V
GS
= -4.5 V, I
D
= -2.7 A
68
110
Forward Transconductance
g
FS
V
DS
= -10 V, I
D
= -3.7 A
6.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
0 V f
1 0 MH
750
pF
Output Capacitance
C
OSS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= -15 V
140
Reverse Transfer Capacitance
C
RSS
V
DS
= -15 V
130
Total Gate Charge
Q
G(TOT)
15.25
32
nC
Threshold Gate Charge
Q
G(TH)
V
GS
= -10 V, V
DD
= -15 V,
0.8
Gate-to-Source Charge
Q
GS
V
GS
= -10 V, V
DD
= -15 V,
I
D
= -3.7 A
2.6
Gate-to-Drain Charge
Q
GD
3.4
SWITCHING CHARACTERISTICS, VGS = -10 V (Note 4)
Turn-On Delay Time
t
d(ON)
9.0
17
ns
Rise Time
t
r
V
GS
= -10 V, V
DD
= -15 V,
9.0
18
Turn-Off Delay Time
t
d(OFF)
V
GS
= -10 V, V
DD
= -15 V,
I
D
= -1.0 A, R
G
= 6.0
W
38
85
Fall Time
t
f
22
45
SWITCHING CHARACTERISTICS, VGS = -4.5 V (Note 4)
Turn-On Delay Time
t
d(ON)
11
20
ns
Rise Time
t
r
V
GS
= -4.5 V, V
DD
= -15 V,
15
28
Turn-Off Delay Time
t
d(OFF)
V
GS
= -4.5 V, V
DD
= -15 V,
I
D
= -1.0 A, R
G
= 6.0
W
28
56
Fall Time
t
f
22
50
DRAIN - SOURCE DIODE CHARACTERISTICS
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Diode Voltage
V
DS
V
GS
= 0 V,
T
J
= 25
C
-0.76
-1.2
V
V
GS
= 0 V,
I
S
= -1.0 A
T
J
= 125
C
-0.60
Reverse Recovery Time
t
RR
24
60
ns
Charge Time
t
a
V
GS
= 0
V
9.0
Discharge Time
t
b
V
GS
= 0
V
dI
S
/dt = 100 A/
m
s, I
S
= -1.0 A
15
Reverse Recovery Charge
Q
RR
12
nC
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTGS4111P
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3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
-8 V
100
C
0
12
9
1.2
0.8
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D,
DRAIN CURRENT (AMPS)
3
0
0.4
Figure 1. On-Region Characteristics
1
10
2.5
2
3
8
7
1
1.5
0
4.5
Figure 2. Transfer Characteristics
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
15
1000
100
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
DSS,
LEAKAGE
CURRENT (nA)
-I
D,
DRAIN CURRENT (AMPS)
2
10
0.1
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
-V
GS,
GATE VOLTAGE (VOLTS)
-50
0
-25
25
1.0
0.5
50
125
100
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
T
J
= 25
C
100000
5
T
J
= -55
C
V
GS
= 0 V
75
150
I
D
= -3.7 A
V
GS
= -10 V
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (NORMALIZED)
25
C
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
1.5
-3 V
25
30
-3.2 V
-3.4 V
-4.5 V
0.2
1.6
2
10000
4
6
8
0
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
2.0
0.05
-I
D,
DRAIN CURRENT (AMPS)
0.1
0
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
V
GS
= -4.5 V
4.0
6
9
10
3.0
T
J
= 25
C
V
GS
= -10 V
T
J
= 100
C
T
J
= 150
C
3.5
4
2
3
4
5
6
V
DS
-10 V
9
3
5
7
T
J
= 25
C
I
D
= -3.7 A
20
11
8
2
5
10
7
1
4
3.2
2.8
2.4
3.6
4
-3.6 V
-3.8 V
-4 V
-4.2 V
-10V
-6 V
-5 V
-5.5 V
5
11
12
NTGS4111P
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4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
V
DS
= 0 V
V
GS
= 0 V
0
10
10
1400
600
400
200
0
30
-GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
0
8
2
0
Q
g
, TOTAL GATE CHARGE (nC)
-V
GS
,
GA
TE-T
O-SOURCE
VOL
T
AGE (VOL
TS)
T
J
= 25
C
C
oss
C
iss
C
rss
I
D
= -3.7 A
T
J
= 25
C
1000
12
8
4
6
Q
GS
5
800
12
-V
GS
-V
DS
15
4
0.9
1
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
-I
S
, SOURCE CURRENT (AMPS)
T
J
= 25
C
1.0
0.4
0.3
10
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source Voltage vs. Total
Gate Charge
Figure 9. Maximum Rated Forward Biased
Safe Operating Area
Figure 10. Diode Forward Voltage vs. Current
5
1200
2
16
QT
0.5
0.8
0.6
0.1
0.7
0.1
1
100
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
0.01
100
-I
D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= -20 V
SINGLE PULSE
T
C
= 25
C
1 ms
100
m
s
dc
0.1
1
10 ms
1300
500
300
100
900
700
1100
20
25
C
iss
C
rss
10
0
20
10
-V
DS,
DRAIN-T
O-SOURCE
VOL
T
AGE (VOL
TS)
6
10
14
1
13
9
5
3
7
11
15
Q
GD
V
GS
V
DS
1.1
V
GS
= 0 V
T
J
= -55
C
T
J
= 150
C
T
J
= 100
C
0.0001
1
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
1E+03
0.1
D = 0.5
R
thja(t)
, EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 11. FET Thermal Response
0.2
0.1
0.05
0.02
0.01
Single Pulse
t, TIME (s)
0.01
0.001
1E-06
1E-05
1E-04
1E-07
NTGS4111P
http://onsemi.com
5
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE H
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.1142 0.1220
2.90
3.10
B
0.0512 0.0669
1.30
1.70
C
0.0354 0.0433
0.90
1.10
D
0.0098 0.0197
0.25
0.50
G
0.0335 0.0413
0.85
1.05
H
0.0005 0.0040
0.013
0.100
J
0.0040 0.0102
0.10
0.26
K
0.0079 0.0236
0.20
0.60
L
0.0493 0.0610
1.25
1.55
M
0
10
0
10
S
0.0985 0.1181
2.50
3.00
_
_
_
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
M
J
K
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
NTGS4111P
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6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81-3-5773-3850
NTGS4111P/D
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