Semiconductor Components Industries, LLC, 2006
February, 2006 - Rev. 2
1
Publication Order Number:
NTK3043N/D
NTK3043N
Power MOSFET
20 V, 285 mA, N-Channel with ESD
Protection, SOT-723
Features
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC-89 and 38% Thinner than SC-89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V
GS(TH)
< 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics.
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology.
This is a Pb-Free Device
Applications
Interfacing, Switching
High Speed Switching
Cellular Phones, PDA's
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
20
V
Gate-to-Source Voltage
V
GS
10
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
C
I
D
255
mA
T
A
= 85
C
185
t
v
5 s
T
A
= 25
C
285
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
C
P
D
440
mW
t
v
5 s
545
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
C
I
D
210
mA
T
A
= 85
C
155
Power Dissipation
(Note 2)
T
A
= 25
C
P
D
310
mW
Pulsed Drain Current
t
p
= 10
m
s
I
DM
400
mA
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Source Current (Body Diode) (Note 2)
I
S
286
mA
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
I
D
Max
20 V
1.5
W
@ 4.5 V
2.4
W
@ 2.5 V
285 mA
Device
Package
Shipping
ORDERING INFORMATION
NTK3043NT1G
SOT-723
(Pb-Free)
4000/Tape & Reel
4 mm Pitch
CASE 631AA
SOT-723
MARKING DIAGRAM
Top View
SOT-723 (3-LEAD)
3
1
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
5.1
W
@ 1.8 V
KA M
1
KA
= Specific Device Code
M
= Date Code
1 - Gate
2 - Source
3 - Drain
6.8
W
@ 1.65 V
NTK3043NT5G
SOT-723
(Pb-Free)
8000/Tape & Reel
2 mm Pitch
NTK3043N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction-to-Ambient Steady State (Note 3)
R
q
JA
280
C/W
Junction-to-Ambient t = 5 s (Note 3)
R
q
JA
228
Junction-to-Ambient Steady State Minimum Pad (Note 4)
R
q
JA
400
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface-mounted on FR4 board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 100
m
A
20
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= 100
m
A, Reference to 25
C
27
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25
C
1
mA
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
5 V
1
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
0.4
1.3
V
Gate Threshold Temperature Coeffi-
cient
V
GS(TH)
/T
J
-2.4
mV/
C
Drain-to-Source On Resistance
R
DS(ON)
V
GS
= 4.5V, I
D
= 10 mA
1.5
3.4
W
V
GS
= 4.5V, I
D
= 255 mA
1.6
3.8
V
GS
= 2.5 V, I
D
= 1 mA
2.4
4.5
V
GS
= 1.8 V, I
D
= 1 mA
5.1
10
V
GS
= 1.65 V, I
D
= 1 mA
6.8
15
Forward Transconductance
g
FS
V
DS
= 5 V, I
D
= 100 mA
0.275
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 10 V
11
pF
Output Capacitance
C
OSS
8.3
Reverse Transfer Capacitance
C
RSS
2.7
Switching Characteristics, VGS= 4.5 V (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DD
= 5 V, I
D
= 10 mA,
R
G
= 6
W
13
ns
Rise Time
t
r
15
Turn-Off Delay Time
t
d(OFF)
94
Fall Time
t
f
55
Drain-Source Diode Characteristics
Forward Diode Voltage
V
SD
V
GS
= 0 V, I
S
= 286 mA
T
J
= 25
C
0.83
1.2
V
T
J
= 125
C
0.69
Reverse Recovery Time
t
RR
V
GS
= 0 V, V
DD
= 20 V, dISD/dt = 100 A/
m
s,
I
S
= 286 mA
9.1
ns
Charge Time
t
a
7.1
Discharge Time
t
b
2.0
Reverse Recovery Charge
Q
RR
3.7
nC
5. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%
6. Switching characteristics are independent of operating junction temperatures
NTK3043N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125
C
0
0.1
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN
CURRENT (AMPS)
0
Figure 1. On-Region Characteristics
1.5
0.1
0
Figure 2. Transfer Characteristics
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
I
D,
DRAIN
CURRENT (AMPS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
-50
0
-25
25
4.0
9.0
2.0
1.0
0
50
150
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
T
J
= 25
C
T
J
= -55
C
75
T
J
= 25
C
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE
T
J
= 25
C
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
V
GS
= 2.5 V
1
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150
C
T
J
= 125
C
2.0 V
2.2 V
V
GS
= 4.5 V
V
DS
5 V
10
1.4 V
20
V
GS
= 3 V to 10 V
0.2
0.3
125
100
2.5
10
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
2
3
4
1
6
1
4
6
2
4
3
5
100
5
3
5
1
2
0
0.3
0.1
3.0
0.2
2
1000
1.6 V
2.5 V
5
8
0.2
0.3
I
D
= 0.255 A
T
J
= 25
C
0
1
10
4
1.8 V
2
7
5
9
3
5.0
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 4.5 V, I
D
= 10 mA
V
GS
= 1.65 V, I
D
= 1 mA
6.0
7.0
8.0
V
GS
= 1.8 V, I
D
= 10 mA
NTK3043N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 7. Capacitance Variation
0.1
0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 8. Resistive Switching Time
Variation vs. Gate Resistance
I
S
,
SOURCE CURRENT (AMPS)
V
GS
= 0 V
Figure 9. Diode Forward Voltage vs. Current
1.0
0.6
0.4
0.3
R
G
, GATE RESISTANCE (OHMS)
1
10
100
100
1
t, TIME
(ns)
V
DD
= 5 V
I
D
= 10 mA
V
GS
= 4.5 V
t
r
t
d(on)
1000
t
f
t
d(off)
0.2
0.4
0.7
0.5
10
0.9
0.8
T
J
= 125
C
T
J
= 150
C
T
J
= 25
C
T
J
= -55
C
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
0
5
10
15
20
25
10
5
0
5
10
15
20
T
J
= 25
C
V
GS
= 0 V
V
DS
= 0 V
C
iss
C
iss
C
rss
C
rss
C
oss
C, CAP
ACIT
ANCE
(pF)
V
DS
V
GS
NTK3043N
http://onsemi.com
5
PACKAGE DIMENSIONS
DIM
MIN
NOM
MAX
MILLIMETERS
A
0.45
0.50
0.55
b
0.15
0.21
0.27
b1
0.25
0.31
0.37
C
0.07
0.12
0.17
D
1.15
1.20
1.25
E
0.75
0.80
0.85
e
0.40 BSC
H
1.15
1.20
1.25
L
0.15
0.20
0.25
0.018
0.020
0.022
0.0059 0.0083 0.0106
0.010
0.012
0.015
0.0028 0.0047 0.0067
0.045
0.047
0.049
0.03
0.032
0.034
0.016 BSC
0.045
0.047
0.049
0.0059 0.0079 0.0098
MIN
NOM
MAX
INCHES
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
D
b1
E
b
e
A
L
C
H
-Y-
-X-
X
0.08 (0.0032)
Y
2X
E
1
2
3
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
1.0
0.039
mm
inches
SCALE 20:1
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
0.40
0.0157
SOT-723
CASE 631AA-01
ISSUE B
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTK3043N
http://onsemi.com
6
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800-282-9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
NTK3043N/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082-1312 USA
Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada
Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
PDF 
ZIP