Semiconductor Components Industries, LLC, 2006
June, 2006 - Rev. 1
1
Publication Order Number:
NTMFS4833N/D
NTMFS4833N
Power MOSFET
30 V, 191 A, Single N-Channel, SO-8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices*
Applications
CPU Power Delivery
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current R
qJA
(Note 1)
Steady
State
T
A
= 25C
I
D
26
A
T
A
= 85C
19
Power Dissipation
R
qJA
(Note 1)
T
A
= 25C
P
D
2.35
W
Continuous Drain
Current R
qJA
(Note 2)
T
A
= 25C
ID
16
A
T
A
= 85C
12
Power Dissipation
R
qJA
(Note 2)
T
A
= 25C
P
D
0.91
W
Continuous Drain
Current R
qJC
(Note 1)
T
C
= 25C
I
D
191
A
T
C
= 85C
138
Power Dissipation
R
qJC
(Note 1)
T
C
= 25C
P
D
125
W
Pulsed Drain
Current
T
A
= 25C,
t
p
= 10 ms
I
DM
288
A
Operating Junction and Storage
Temperature
T
J
, T
STG
-55 to
+150
C
Source Current (Body Diode)
I
S
104
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (T
J
= 25C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 35 A
pk
, L = 1.0 mH, R
G
= 25 W)
EAS
612.5
mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
(Note: Microdot may be in either location)
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
2.0 mW @ 10 V
191 A
3.0 mW @ 4.5 V
G (4)
S (1,2,3)
N-CHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4833NT1G
SO-8 FL
(Pb-Free)
1500/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTMFS4833NT3G
SO-8 FL
(Pb-Free)
5000/Tape & Reel
4833N
AYWWG
G
S
S
S
G
D
D
D
D
NTMFS4833N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
qJC
1.0
C/W
Junction-to-Ambient Steady State (Note 3)
R
qJA
53.2
Junction-to-Ambient Steady State (Note 4)
R
qJA
137.8
3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
4. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
17
mV/C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 C
1
mA
T
J
= 125C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
= 20 V
100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
7.12
mV/C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
1.3
2.0
mW
I
D
= 15 A
1.3
V
GS
= 4.5 V
I
D
= 30 A
2.3
3.0
I
D
= 15 A
2.3
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
30
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
5600
pF
Output Capacitance
C
OSS
1200
Reverse Transfer Capacitance
C
RSS
650
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
39
58
nC
Threshold Gate Charge
Q
G(TH)
6.0
Gate-to-Source Charge
Q
GS
16
Gate-to-Drain Charge
Q
GD
17
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
88
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0 W
25
ns
Rise Time
t
r
34
Turn-Off Delay Time
t
d(OFF)
35
Fall Time
t
f
17
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0 W
14
ns
Rise Time
t
r
19
Turn-Off Delay Time
t
d(OFF)
50
Fall Time
t
f
10
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4833N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25C
-
0.8
1.0
V
T
J
= 125C
-
0.68
-
Reverse Recovery Time
t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
-
38
-
ns
Charge Time
t
a
-
19
-
Discharge Time
t
b
-
19
-
Reverse Recovery Charge
Q
RR
-
36
-
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25C
-
0.50
-
nH
Drain Inductance
L
D
-
0.005
-
nH
Gate Inductance
L
G
-
1.84
-
nH
Gate Resistance
R
G
-
1.0
-
W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4833N
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4
TYPICAL PERFORMANCE CURVES
4.2 V thru 10 V
2.8 V
3.2 V
3.0 V
200
0.003
0
100
1.0
0
1,000
100,000
0
2
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.006
0
4
Figure 3. On-Resistance vs. Gate-to-Source
Voltage
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN
-
TO
-
SOURCE RESIST
ANCE (
W
)
R
DS(on)
, DRAIN
-
TO
-
SOURCE RESIST
ANCE (
W
)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (C)
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN
-
TO
-
SOURCE RESIST
ANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
-50
25
0
-25
50
75
2
3
15
10
30
0
3
V
DS
10 V
T
J
= 25C
T
J
= -55C
T
J
= 125C
V
GS
= 4.5 V
125
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150C
50
0
4
5
T
J
= 25C
20
V
GS
= 4.0 V
1.75
100
4
0
6
50
0.001
75
3.4 V
3.6 V
3.8 V
50
25
200
25
200
I
D
= 30 A
T
J
= 25C
8
V
GS
= 11.5 V
100
T
J
= 25C
0.002
25
5
75
1
10
12
0.004
25
75
100
125
150
175
100
175
0.002
0.004
0.008
125
175
150
1.5
0.5
T
J
= 125C
150
0.010
125
150
10,000
5
0.25
0.75
1.25
NTMFS4833N
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5
TYPICAL PERFORMANCE CURVES
t
r
t
d(off)
t
d(on)
t
f
V
GS
-10
0
10
15
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Figure 7. Capacitance Variation
6000
0
V
GS
V
DS
-5
5
T
J
= 25C
C
iss
C
oss
C
rss
C
iss
Figure 8. Gate-To-Source and Drain-To-Source
Voltage vs. Total Charge
0
4
0
Q
G
, TOTAL GATE CHARGE (nC)
2
8
40
I
D
= 30 A
T
J
= 25C
Q
T
50
0
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
I S
, SOURCE CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
1
10
100
1000
t, TIME
(ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.2
0.4
5
10
15
10
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
0.6
0.8
20
30
25
T
J
= 25C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1000
I D
, DRAIN CURRENT
(AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
10
V
GS
= 20 V
SINGLE PULSE
T
C
= 25C
1 ms
100 ms
10 ms
dc
10 ms
20
1
100
0
25
T
J
, STARTING JUNCTION TEMPERATURE (C)
I
D
= 35 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50
75
50
200
300
100
125
350
650
E
AS
, SINGLE PULSE DRAIN
-
TO
-
SOURCE
A
V
ALANCHE ENERGY (mJ)
150
1000
100
25
8000
5000
4000
3000
2000
0
1.0
500
V
GS
, GA
TE
-
TO
-
SOURCE VOL
T
AGE (VOL
TS)
6
20
10
30
80
70
60
Q1
550
600
12
90
7000
V
DS
= 0 V V
GS
= 0 V
10
Q2
0.01
0.1
150
250
400
450
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