Semiconductor Components Industries, LLC, 2006
July, 2006 - Rev. 1
1
Publication Order Number:
NTMFS4837N/D
NTMFS4837N
Power MOSFET
30 V, 74 A, Single N-Channel, SO-8 FL
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb-Free Devices
Applications
CPU Power Delivery
DC-DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
30
V
Gate-to-Source Voltage
V
GS
20
V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25
C
I
D
16
A
T
A
= 85
C
11.5
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25
C
P
D
2.2
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25
C
ID
10
A
T
A
= 85
C
7
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25
C
P
D
0.88
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25
C
I
D
74
A
T
C
= 85
C
53
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25
C
P
D
47.2
W
Pulsed Drain
Current
t
p
=10
m
s
T
A
= 25
C
I
DM
148
A
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
+150
C
Source Current (Body Diode)
I
S
39
A
Drain to Source dV/dt
dV/dt
6
V/ns
Single Pulse Drain-to-Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25
W)
EAS
242
mJ
Lead Temperature for Soldering Purposes
(1/8" from case for 10 s)
T
L
260
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO-8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
4837N
AYWW
G
G
1
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
5.0 m
W
@ 10 V
74 A
7.5 m
W
@ 4.5 V
G (4)
S (1,2,3)
N-CHANNEL MOSFET
D (5,6)
Device
Package
Shipping
ORDERING INFORMATION
NTMFS4837NT1G
SO-8 FL
(Pb-Free)
1500 /
Tape & Reel
NTMFS4837NT3G
SO-8 FL
(Pb-Free)
5000 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
(Note: Microdot may be in either location)
NTMFS4837N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction-to-Case (Drain)
R
q
JC
2.65
C/W
Junction-to-Ambient Steady State (Note 1)
R
q
JA
56.75
Junction-to-Ambient Steady State (Note 2)
R
q
JA
142.2
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250
m
A
30
V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
25
mV/
C
Zero Gate Voltage Drain Current
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
C
1
m
A
T
J
= 125
C
10
Gate-to-Source Leakage Current
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
m
A
1.5
2.5
V
Negative Threshold Temperature Coefficient
V
GS(TH)
/T
J
5.7
mV/
C
Drain-to-Source On Resistance
R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A
3.5
5.0
m
W
I
D
= 15 A
3.5
V
GS
= 4.5 V
I
D
= 30 A
5.9
7.5
I
D
= 15 A
5.9
Forward Transconductance
g
FS
V
DS
= 15 V, I
D
= 15 A
15
S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
2048
pF
Output Capacitance
C
OSS
444
Reverse Transfer Capacitance
C
RSS
239
Total Gate Charge
Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
14.2
22
nC
Threshold Gate Charge
Q
G(TH)
2.98
Gate-to-Source Charge
Q
GS
5.7
Gate-to-Drain Charge
Q
GD
6.7
Total Gate Charge
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 15 A
34.2
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
14.2
ns
Rise Time
t
r
55
Turn-Off Delay Time
t
d(OFF)
19
Fall Time
t
f
10
Turn-On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
8.5
ns
Rise Time
t
r
25.6
Turn-Off Delay Time
t
d(OFF)
25.2
Fall Time
t
f
9.2
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4837N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Parameter
Unit
Max
Typ
Min
Test Condition
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25
C
0.85
1.2
V
T
J
= 125
C
0.72
Reverse Recovery Time
t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/
m
s,
I
S
= 30 A
24
ns
Charge Time
t
a
13
Discharge Time
t
b
11
Reverse Recovery Charge
Q
RR
14
nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
= 25
C
0.93
nH
Drain Inductance
L
D
0.005
Gate Inductance
L
G
1.84
Gate Resistance
R
G
2.8
W
3. Pulse Test: pulse width
v
300
m
s, duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. V
GS
Figure 4. On-Resistance vs. Drain Current &
Gate Voltage
1
100
0
3
2
5
4
90
80
70
60
50
40
30
20
10
0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
3.8 V
T
J
= 25
C
V
GS =
10 V to 4.5 V
3.6 V
3.4 V
3.2 V
4V
T
J
= 125
C
T
J
= -55
C
T
J
= 25
C
V
DS
10 V
1
2
3
4
5
6
7
8
0
100
90
80
70
60
50
40
30
20
10
I
D
, DRAIN CURRENT (A)
0
0.002
0.004
0.006
0.008
20
40
60
90
V
GS
= 4.5 V
V
GS
= 11.5 V
T
J
= 25
C
I
D
, DRAIN CURRENT (A)
0.01
30
80
10
50
70
0.001
0.003
0.005
0.007
0.009
0.003
0.005
0.006
0.008
0.010
0.012
0.014
0.016
0.004
0.007
0.009
0.011
0.013
0.015
T = 25
C
I
D
= 30 A
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
11
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
I
D
,
DRAIN CURRENT (A)
11.5
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(
W
)
NTMFS4837N
http://onsemi.com
4
Figure 5. On-Resistance Variation with
Temperature
Figure 6. Drain-to-Source Leakage Current vs.
Voltage
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source & Drain-to-Source
Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1
10
100
1
10
100
t, TIME
(ns)
t
r
t
d(on)
t
d(off)
t
f
R
G
, GATE RESISTANCE (
W
)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
1000
100
1000
10000
100000
5
10
15
20
25
30
I
DSS
, LEAKAGE (nA)
10
1
0
T
J
= 125
C
T
J
= 150
C
V
GS
= 0 V
T
J
= 25
C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0
1000
2000
3000
10
5
0
5
10
15
20
25
C, CAP
ACIT
ANCE
(pF)
C
OSS
C
RSS
T
J
= 25
C
V
GS
V
DS
C
ISS
35
30
25
20
15
10
5
0
12
10
8
6
4
2
0
Q
T
Q
gd
Q
gs
V
DD
= 15.0 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25
C
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GA
TE-T
O-SOURCE VOL
T
AGE (V)
0.50
0.60
0.80
15
30
25
20
10
5
0
V
GS
= 0 V
T
J
= 25
C
V
SD
, SOURCE-TO-DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
1.40
0.60
T
J
, JUNCTION TEMPERATURE (
C)
R
DS(on)
, DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
-50
25
0
-25
50
75
125
I
D
= 30 A
V
GS
= 10 V & 4.5 V
100
1.00
150
0.80
1.60
1.80
1.20
NTMFS4837N
http://onsemi.com
5
Figure 11. Maximum Rated Forward-Biased
Safe Operating Range
Figure 12. Maximum Avalanche Energy vs,
Starting Junction Temperature
Figure 13. EAS vs. Pulse Width
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (
C)
EAS, SINGLE PULSE DRAIN-T
O-
SOURCE
A
V
ALANCHE ENERGY (mJ)
75
250
225
200
175
150
125
100
50
25
0
I
D
= 22 A
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
100
1000
10
1
100
10
1
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
V
GS
= 20 V
Single Pulse
T
C
= 25
C
10
m
s
100
m
s
10 ms
dc
100
100
10
1
1000
1
10
I
D
(A)
PULSE WIDTH (
m
s)
100 ms
125
C
100
C
25
C
PDF 
ZIP