Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 1
1
Publication Order Number:
NTP18N06/D
NTP18N06, NTB18N06
Power MOSFET
15 Amps, 60 Volts
NChannel TO220
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
60
Vdc
DraintoGate Voltage (RGS = 10 m
)
VDGR
60
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp
v
10 ms)
VGS
"
20
"
30
Vdc
Drain Current
Continuous @ TA = 25
C
Continuous @ TA = 100
C
Single Pulse (tp
v
10
m
s)
ID
ID
IDM
15
8.0
45
Adc
Adc
Apk
Total Power Dissipation @ TA = 25
C
Derate above 25
C
PD
48.4
0.32
Watts
W/
C
Operating and Storage Temperature Range
TJ, Tstg
55 to
+175
C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25
C
(VDD = 25 Vdc, VGS = 10 Vdc, VDS = 60 Vdc,
IL(pk) = 11 A, L = 1.0 mH, RG = 25
)
EAS
61
mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
R
JC
R
JA
3.1
72.5
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
TL
260
C
15 AMPERES
60 VOLTS
RDS(on) = 90 m
Device
Package
Shipping
ORDERING INFORMATION
NTP18N06
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
NTx18N06
= Device Code
x
= B or P
LL
= Location Code
Y
= Year
WW
= Work Week
NTx18N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx18N06
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
1
2
3
4
D2PAK
CASE 418B
STYLE 2
NTB18N06
D2PAK
50 Units/Rail
NTB18N06T4
D2PAK
800/Tape & Reel
NTP18N06, NTB18N06
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2
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Note 1)
(VGS = 0 Vdc, ID = 250
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
67
62.4
Vdc
mV/
C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 60 Vdc)
(VGS = 0 Vdc, VDS = 60 Vdc, TJ = 150
C)
IDSS
1.0
10
Adc
GateBody Leakage Current (VGS =
20
Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (Note 1)
(VDS = VGS, ID = 250
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.9
6.2
4.0
Vdc
mV/
C
Static DraintoSource OnResistance (Note 1)
(VGS = 10 Vdc, ID = 7.5 Adc)
RDS(on)
76
90
m
Static DraintoSource OnVoltage (Note 1)
(VGS = 10 Vdc, ID = 15 Adc)
(VGS = 10 Vdc, ID = 7.5 Adc, TJ = 150
C)
VDS(on)
1.2
1.08
1.62
Vdc
Forward Transconductance (Note 1) (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
6.8
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
325
450
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
108
150
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
34
70
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
td(on)
10
15
ns
Rise Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 10 Vdc
tr
25
70
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1
) (Note 1)
td(off)
14
50
Fall Time
RG 9.1
) (Note 1)
tf
13
50
Gate Charge
(V
48 Vd
I
15 Ad
Qt
12
22
nC
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc) (Note 1)
Q1
4.1
VGS = 10 Vdc) (Note 1)
Q2
4.5
SOURCEDRAIN DIODE CHARACTERISTICS
Diode Forward OnVoltage
(IS = 15 Adc, VGS = 0 Vdc) (Note 1)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150
C)
VSD
0.95
0.84
1.15
Vdc
Reverse Recovery Time
trr
35
ns
(IS = 15 Adc VGS = 0 Vdc
ta
27
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
s) (Note 1)
tb
7.4
Reverse Recovery Stored
Charge
dIS/dt = 100 A/
s) (Note 1)
QRR
0.050
C
1. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2%.
2. Switching characteristics are independent of operating junction temperature.
NTP18N06, NTB18N06
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3
Figure 1. OnRegion Characteristics
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
32
24
16
8
4
3
2
1
0
Figure 2. Transfer Characteristics
VGS, GATETOSOURCE VOLTAGE (VOLTS)
7
6
5
4
3
32
24
16
8
0
0
Figure 3. OnResistance versus
GatetoSource Voltage
ID, DRAIN CURRENT (AMPS)
0.2
0.16
0.12
0.04
20
16
12
8
4
0
Figure 4. OnResistance versus Drain Current
and Gate Voltage
0
Figure 5. OnResistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (
C)
2
1.6
1.4
1.2
1
0.8
150
125
100
75
50
25
0
25
50
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
10
0
100
10
1
0.6
1000
Figure 6. DraintoSource Leakage Current
versus Voltage
I D
, DRAIN CURRENT (AMPS)
I D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
W
)
32
28
0.08
R
DS(on)
, DRAINT
OSOURCE RESIST
ANCE (
W
)
R
DS(on),
DRAINT
OSOURCE RESIST
ANCE (NORMALIZED)
I DSS
, LEAKAGE (nA)
20
60
5
40
30
50
VGS = 10 V
TJ = 25
C
TJ = 55
C
TJ = 100
C
VDS
10 V
TJ = 25
C
TJ = 55
C
TJ = 100
C
VGS = 10 V
ID = 7.5 A
VGS = 10 V
TJ = 150
C
VGS = 0 V
TJ = 100
C
9 V
8 V
7 V
6.5 V
6 V
5.5 V
5 V
4.5 V
8
24
0.2
0.16
0.12
0.04
20
16
12
8
4
0
0
32
28
0.08
TJ = 25
C
TJ = 55
C
TJ = 100
C
VGS = 15 V
24
175
1.8
ID, DRAIN CURRENT (AMPS)
NTP18N06, NTB18N06
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4
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (
t)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because draingate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turnon and turnoff delay times, gate current is
not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
The capacitance (Ciss) is read from the capacitance curve at
a voltage corresponding to the offstate condition when
calculating td(on) and is read at a voltage corresponding to the
onstate when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
10
0
10
15
20
25
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
Figure 7. Capacitance Variation
900
300
100
0
VGS
VDS
500
200
5
5
400
VGS = 0 V
VDS = 0 V
TJ = 25
C
Ciss
Coss
Crss
Ciss
600
700
800
Crss
NTP18N06, NTB18N06
http://onsemi.com
5
16
0
0.6
DRAINTOSOURCE DIODE CHARACTERISTICS
VSD, SOURCETODRAIN VOLTAGE (VOLTS)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
I S
, SOURCE CURRENT
(AMPS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (
)
1
10
100
1000
1
t, TIME
(ns)
VGS = 0 V
TJ = 25
C
Figure 10. Diode Forward Voltage versus Current
V
GS
, GA
TET
OSOURCE VOL
T
AGE (VOL
TS)
0
10
6
2
0
QG, TOTAL GATE CHARGE (nC)
12
8
4
4
8
10
2
10
6
12
0.68
0.76
1
4
8
12
ID = 15 A
TJ = 25
C
VGS
Q2
Q1
QT
tr
td(off)
td(on)
tf
VDS = 30 V
ID = 15 A
VGS = 10 V
0.84
0.92
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous draintosource voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25
C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, "Transient Thermal Resistance
General Data and Its Use."
Switching between the offstate and the onstate may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10
s. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) TC)/(R
JC).
A Power MOSFET designated EFET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases nonlinearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many EFETs can withstand the stress of
draintosource avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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