Semiconductor Components Industries, LLC, 2004
October, 2004 - Rev. 3
1
Publication Order Number:
NTR4101P/D
NTR4101P
Trench Power MOSFET
-20 V, Single P-Channel, SOT-23
Features
Leading -20 V Trench for Low R
DS(on)
-1.8 V Rated for Low Voltage Gate Drive
SOT-23 Surface Mount for Small Footprint
Pb-Free Package is Available
Applications
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
V
DSS
-20
V
Gate-to-Source Voltage
V
GS
8.0
V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25
C
I
D
-2.4
A
Current (Note 1)
State
T
A
= 85
C
-1.7
t
10 s
T
A
= 25
C
-3.2
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
C
P
D
0.73
W
t
10 s
1.25
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
C
I
D
-1.8
A
Current (Note 2)
State
T
A
= 85
C
-1.3
Power Dissipation
(Note 2)
T
A
= 25
C
P
D
0.42
W
Pulsed Drain Current
tp = 10
m
s
I
DM
-7.5
A
ESD Capability (Note 3)
C = 100 pF,
RS = 1500
W
ESD
225
V
Operating Junction and Storage Temperature
T
J
,
T
STG
-55 to
150
C
Source Current (Body Diode)
I
S
-2.4
A
Lead Temperature for Soldering
Purposes (1/8" from case for 10 s)
T
L
260
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction-to-Ambient - Steady State (Note 1)
R
q
JA
170
C/W
Junction-to-Ambient - t < 10 s (Note 1)
R
q
JA
100
Junction-to-Ambient - Steady State (Note 2)
R
q
JA
300
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
S
G
D
Device
Package
Shipping
ORDERING INFORMATION
NTR4101PT1
SOT-23
3000/Tape & Reel
P-Channel MOSFET
SOT-23
CASE 318
STYLE 21
W
TR4
TR4
= Device Code
W
= Work Week
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
1
Gate
2
1
3
2
Source
NTR4101PT1G
SOT-23
Pb-Free
3000/Tape & Reel
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
-20 V
70 m
W
@ -4.5 V
90 m
W
@ -2.5 V
112 m
W
@ -1.8 V
-3.2 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= -250
m
A)
V
(BR)DSS
-20
V
Zero Gate Voltage Drain Current (Note 4)
(V
GS
= 0 V, V
DS
= -16 V)
I
DSS
-1.0
m
A
Gate-to-Source Leakage Current
(V
GS
=
8.0 V, V
DS
= 0 V)
I
GSS
100
nA
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V
GS
= V
DS
, I
D
= -250
m
A)
V
GS(th)
-0.40
-0.720
-1.5
V
Drain-to-Source On-Resistance
(V
GS
= -4.5 V, I
D
= -1.6 A)
(V
GS
= -2.5 V, I
D
= -1.3 A)
(V
GS
= -1.8 V, I
D
= -0.9 A)
R
DS(on)
70
90
112
85
120
210
m
W
Forward Transconductance (V
DS
= -5.0 V, I
D
= -2.3 A)
g
FS
75
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
iss
675
pF
Output Capacitance
(V
GS
= 0 V, f = 1 MHz, V
DS
= -10 V)
C
oss
100
Reverse Transfer Capacitance
(
GS
,
,
DS
)
C
rss
75
Total Gate Charge
(V
GS
= -4.5 V, V
DS
= -10 V, I
D
= -1.6 A)
Q
G(tot)
7.5
8.5
nC
Gate-to-Source Gate Charge
(V
DS
= -10 V, I
D
= -1.6 A)
Q
GS
1.2
nC
Gate-to-Drain "Miller" Charge
(V
DS
= -10 V, I
D
= -1.6 A)
Q
GD
2.2
nC
Gate Resistance
R
G
6.5
W
SWITCHING CHARACTERISTICS (Note 5)
Turn-On Delay Time
t
d(on)
7.5
ns
Rise Time
(V
GS
= -4.5
V, V
DS
= -10 V,
t
r
12.6
Turn-Off Delay Time
(V
GS
4.5
V, V
DS
10 V,
I
D
= -1.6 A, R
G
= 6.0
W
)
t
d(off)
30.2
Fall Time
t
f
21.0
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
(V
GS
= 0
V, I
S
= -2.4 A)
V
SD
-0.82
-1.2
V
Reverse Recovery Time
(V
0 V
t
rr
12.8
15
ns
Charge Time
(V
GS
= 0
V,
dI
SD
/dt = 100 A/
m
s, I
S
= -1.6 A)
t
a
9.9
ns
Discharge Time
dI
SD
/dt = 100 A/
m
s, I
S
= -1.6 A)
t
b
3.0
ns
Reverse Recovery Charge
Q
rr
1008
nC
4. Pulse Test: Pulse Width
300
m
s, Duty Cycle
2%.
5. Switching characteristics are independent of operating junction temperature.
NTR4101P
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3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
0
8
100
-V
DS,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
100000
1.0
-I
DSS
, LEAKAGE (nA)
10000
10
1000
4
6
T
J
= 125
C
2
V
GS
= 0 V
10
12
14
16
.
125
C
0
10
5
8
6
3
2
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D,
DRAIN CURRENT (AMPS)
6
2
0
1
Figure 1. On-Region Characteristics
0
6
2
4
10
1
0
6
Figure 2. Transfer Characteristics
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.02
7
9
0.04
0
Figure 3. On-Resistance vs. Drain Current and
Temperature
-I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
-I
D,
DRAIN CURRENT (AMPS)
T
J
= 25
C
0.1
1
3
T
J
= -55
C
4
25
C
-1.6 V
-1.8 V
-2.0 V
-2.2 V
7
8
0.06
V
GS
= -10 V - -2.4 V
T = 125
C
4
0.08
5
3
4
8
0.01
0.03
0.05
0.07
0.09
T = 25
C
T = -55
C
V
GS
= -5.0 V
0.02
7
9
0.04
0
-I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (
W
)
0.15
1
3
0.06
0.08
5
0.01
0.03
0.05
0.07
0.14
T
J
= 25
C
V
GS
= -2.5 V
Figure 4. On-Resistance vs. Drain Current and
Temperature
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
I
D
= -1.6 A
-50
0
-25
25
1.2
1.0
0.8
0.6
0.4
50
125
100
75
150
R
DS(on),
DRAIN-T
O-SOURCE
RESIST
ANCE (NORMALIZED)
1.4
8
10
2
4
6
V
GS
= -4.5 V
0.10
0.12
0.09
0.11
0.13
T
J
= 150
C
Figure 6. Drain-to-Source Leakage Current
vs. Voltage
2
V
DS
20 V
5
9
3
7
1
5
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4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
V
GS
= 0 V
0
10
4
800
400
0
8
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE (pF)
0
6
4
4.0
1.0
0
Q
g
, TOTAL GATE CHARGE (nC)
-V
GS
,
GA
TE-T
O-SOURCE
VOL
T
AGE (VOL
TS)
T
J
= 25
C
C
oss
C
iss
C
rss
I
D
= -1.6 A
T
J
= 25
C
2.0
3.0
Q
gd
Q
gs
10
1
10
1
100
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
DD
= -10 V
I
D
= -1.6 A
V
GS
= -4.5 V
1000
3.5
t
d(off)
t
d(on)
t
f
t
r
6
8
2
0
-V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
-I
S
, SOURCE CURRENT (AMPS)
V
GS
= 0 V
T
J
= 25
C
1.0
0.2
0.4
0.5
4.5
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source
Voltage vs. Total Gate Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2
1000
600
200
QT
100
0.6
0.8
12
14
16
18
20
1.5
2.5
3.5
0.5
1.5
2.5
V
GS
V
DS
-V
DS,
DRAIN-T
O-SOURCE
VOL
T
AGE (VOL
TS)
0
1
2
3
4
5
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5
PACKAGE DIMENSIONS
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
D
J
K
L
A
C
B S
H
G
V
3
1
2
SOT-23 (TO-236)
CASE 318-08
ISSUE AK
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW
STANDARD 318-08.
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTR4101P
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6
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NTR4101P/D
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