Semiconductor Components Industries, LLC, 2004
June, 2004 - Rev. 8
1
Publication Order Number:
NUD3124/D
NUD3124
Automotive Inductive Load
Driver
This MicroIntegration
t part provides a single component solution
to switch inductive loads such as relays, solenoids, and small DC
motors without the need of a free-wheeling diode. It accepts logic
level inputs, thus allowing it to be driven by a large variety of devices
including logic gates, inverters, and microcontrollers.
Features
Provides Robust Interface between D.C. Relay Coils and Sensitive
Logic
Capable of Driving Relay Coils Rated up to 150 mA at 12 Volts
Replaces 3 or 4 Discrete Components for Lower Cost
Internal Zener Eliminates Need for Free-Wheeling Diode
Meets Load Dump and other Automotive Specs
Pb-Free Package is Available
Typical Applications
Automotive and Industrial Environment
Drives Window, Latch, Door, and Antenna Relays
Benefits
Reduced PCB Space
Standardized Driver for Wide Range of Relays
Simplifies Circuit Design and PCB Layout
Compliance with Automotive Specifications
Gate (1)
10 k
100 K
Drain (3)
Source (2)
INTERNAL CIRCUIT DIAGRAMS
Gate (2)
10 k
100 K
Drain (6)
Source (1)
Gate (5)
Drain (3)
Source (4)
10 k
100 K
CASE 318
CASE 318F
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Device
Package
Shipping
ORDERING INFORMATION
NUD3124LT1
SOT-23
3000/Tape & Reel
MARKING DIAGRAMS
1
2
3
SOT-23
CASE 318
STYLE 21
JW6 D
JW6
= Specific Device Code
D
= Date Code
JW6 D
SC-74
CASE 318F
STYLE 7
1
6
JW6
= Specific Device Code
D
= Date Code
NUD3124LT1G
SOT-23
(Pb-Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUD3124DMT1
SC-74
3000/Tape & Reel
NUD3124
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2
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
Drain-to-Source Voltage Continuous
(T
J
= 125
C)
28
V
V
GSS
Gate-to-Source Voltage Continuous
(T
J
= 125
C)
12
V
I
D
Drain Current Continuous
(T
J
= 125
C)
150
mA
E
Z
Single Pulse Drain-to-Source Avalanche Energy
(For Relay's Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial
= 85
C)
250
mJ
P
PK
Peak Power Dissipation, Drain-to-Source (Notes 1 and 2)
(T
J
Initial
= 85
C)
20
W
E
LD1
Load Dump Suppressed Pulse, Drain-to-Source (Notes 3 and 4)
(Suppressed Waveform: V
s
= 45 V, R
SOURCE
= 0.5
W
, T = 200 ms)
(For Relay's Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial
= 85
C)
80
V
E
LD2
Inductive Switching Transient 1, Drain-to-Source
(Waveform: R
SOURCE
= 10
W
, T = 2.0 ms)
(For Relay's Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial
= 85
C)
100
V
E
LD3
Inductive Switching Transient 2, Drain-to-Source
(Waveform: R
SOURCE
= 4.0
W
, T = 50
m
s)
(For Relay's Coils/Inductive Loads of 80
W
or Higher)
(T
J
Initial
= 85
C)
300
V
Rev-Bat
Reverse Battery, 10 Minutes (Drain-to-Source)
(For Relay's Coils/Inductive Loads of 80
W
or more)
-14
V
Dual-Volt
Dual Voltage Jump Start, 10 Minutes (Drain-to-Source)
28
V
ESD
Human Body Model (HBM)
According to EIA/JESD22/A114 Specification
2,000
V
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay's coils/inductive loads higher than 80
W
, see Figure 4.
THERMAL CHARACTERISTICS
Symbol
Rating
Value
Unit
T
A
Operating Ambient Temperature
-40 to 125
C
T
J
Maximum Junction Temperature
150
C
T
STG
Storage Temperature Range
-65 to 150
C
P
D
Total Power Dissipation (Note 5)
SOT-23
Derating above 25
C
225
1.8
mW
mW/
C
P
D
Total Power Dissipation (Note 5)
SC-74
Derating above 25
C
380
3.0
mW
mW/
C
R
q
JA
Thermal Resistance JunctiontoAmbient (Note 5)
SOT-23
SC-74
556
329
C/W
5. Mounted onto minimum pad board.
NUD3124
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3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage
(I
D
= 10 mA)
V
BRDSS
28
34
38
V
Drain to Source Leakage Current
(V
DS
= 12 V, V
GS
= 0 V)
(V
DS
= 12 V, V
GS
= 0 V, T
J
= 125
C)
(V
DS
= 28 V, V
GS
= 0 V)
(V
DS
= 28 V, V
GS
= 0 V, T
J
= 125
C)
I
DSS
-
-
-
-
-
-
-
-
0.5
1.0
50
80
m
A
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 3.0 V, V
DS
= 0 V, T
J
= 125
C)
(V
GS
= 5.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V, T
J
= 125
C)
I
GSS
-
-
-
-
-
-
-
-
60
80
90
110
m
A
ON CHARACTERISTICS
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 125
C)
V
GS(th)
1.3
1.3
1.8
-
2.0
2.0
V
Drain to Source On-Resistance
(I
D
= 150 mA, V
GS
= 3.0 V)
(I
D
= 150 mA, V
GS
= 3.0 V, T
J
= 125
C)
(I
D
= 150 mA, V
GS
= 5.0 V)
(I
D
= 150 mA, V
GS
= 5.0 V, T
J
= 125
C)
R
DS(on)
-
-
-
-
-
-
-
-
1.4
1.7
0.8
1.1
W
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 125
C)
I
DS(on)
150
140
200
-
-
-
mA
Forward Transconductance
(V
DS
= 12 V, I
D
= 150 mA)
g
FS
-
500
-
mmho
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Ciss
-
32
-
pf
Output Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Coss
-
21
-
pf
Transfer Capacitance
(V
DS
= 12 V, V
GS
= 0 V, f = 10 kHz)
Crss
-
8.0
-
pf
SWITCHING CHARACTERISTICS
Propagation Delay Times:
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
High to Low Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Low to High Propagation Delay; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
t
PHL
t
PLH
t
PHL
t
PLH
-
-
-
-
890
912
324
1280
-
-
-
-
ns
Transition Times:
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 3.0 V)
Fall Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
Rise Time; Figure 1, (V
DS
= 12 V, V
GS
= 5.0 V)
t
f
t
r
t
f
t
r
-
-
-
-
2086
708
556
725
-
-
-
-
ns
NUD3124
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4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
Figure 1. Switching Waveforms
Load Dump Pulse Not Suppressed:
V
R
= 13.5 V Nominal
10%
V
S
= 60 V Nominal
10%
T = 300 ms Nominal
10%
T
R
= 1 - 10 ms
10%
Load Dump Pulse Suppressed:
NOTE: Max. Voltage DUT is exposed to is
NOTE:
approximately 45 V.
V
S
= 30 V
20%
T = 150 ms
20%
Figure 2. Maximum Non-repetitive Surge
Power versus Pulse Width
P
W
, PULSE WIDTH (ms)
100
10
1
0
5
10
15
20
25
P
pk
, PEAK SURGE POWER (W)
Figure 3. Load Dump Waveform Definition
VS
T
R
90%
10%
T
V
R
, I
R
10% of Peak;
Reference = V
R
, I
R
V
out
V
in
0 V
V
OH
V
IH
t
r
t
f
t
PLH
t
PHL
50%
90%
50%
10%
V
OL
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5
Figure 4. Load Dump Capability versus
Relay's Coil dc Resistance
RELAY'S COIL (
W
)
350
260
230
200
170
140
110
80
40
60
80
100
120
140
Figure 5. Drain-to-Source Leakage versus
Junction Temperature
Figure 6. Gate-to-Source Leakage versus
Junction Temperature
T
J
, JUNCTION TEMPERATURE (
C)
T
J
, JUNCTION TEMPERATURE (
C)
75
50
25
0
-25
-50
0
2
4
6
8
10
14
100
50
25
0
-25
-50
20
30
40
50
60
70
80
Figure 7. Breakdown Voltage versus Junction
Temperature
T
J
, JUNCTION TEMPERATURE (
C)
125
50
0
-25
-50
33.6
33.8
34.0
34.4
34.6
34.8
V
S
, LOAD DUMP (VOL
TS)
320
290
I
DSS
, DRAIN LEAKAGE (
m
A)
125
100
75
125
I
GS
S
GA
TE LEAKAGE (
m
A)
V
GS
= 5 V
V
GS
= 3 V
25
100
75
34.2
33.4
BV
DSS
BREAKDOWN VOL
T
AGE (V)
I
D
= 10 mA
Figure 8. Output Characteristics
V
DS
= 28 V
Figure 9. Transfer Function
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
0.7
0.5
0.4
0.3
0.2
0.0
1E-10
1E-08
1E-06
1E-04
0.01
1
0.1
0.6
0.8
I
D
DRAIN CURRENT (A)
V
GS
= 5 V
V
GS
= 3 V
12
V
GS
= 2 V
V
GS
= 2.5 V
V
GS
= 1 V
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
4.5
3.0
2.5
2.0
1.5
0.5
1E-07
1E-05
1E-06
1E-04
0.1
1
1.0
4.0
5.0
I
D
DRAIN CURRENT (A)
125
C
3.5
0.001
0.01
85
C
25
C
-40
C
V
DS
= 0.8 V
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