Semiconductor Components Industries, LLC, 2005
March, 2005 - Rev. 1
1
Publication Order Number:
NUP4201MR6/D
NUP4201MR6
Low Capacitance TSOP-6
Diode-TVS Array for High
Speed Data Lines
Protection
The NUP4201MR6 transient voltage suppressor is designed to
protect high speed data lines from ESD, EFT, and lighting.
Features:
Low Capacitance (3 pF Maximum Between I/O Lines)
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body model
and Class C (Exceeding 400 V) per Machine Model
Protection for the Following IEC Standards:
IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 61000-4-4 (EFT) 40 A (5/50 ns)
IEC 61000-4-5 (lighting) 23 A (8/20
ms)
UL Flammability Rating of 94 V-0
Pb-Free Package is Available
Typical Applications:
High Speed Communication Line Protection
USB 1.1 and 2.0 Power and Data Line Protection
Digital Video Interface (DVI)
Monitors and Flat Panel Displays
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Power Dissipation
8 x 20
m
S @ T
A
= 25
C (Note 1)
P
pk
500
W
Operating Junction Temperature Range
T
J
- 40 to +125
C
Storage Temperature Range
T
stg
- 55 to +150
C
Lead Solder Temperature -
Maximum (10 Seconds)
T
L
235
C
Human Body Model (HBM)
Machine Model (MM)
IEC 61000-4-2 Air (ESD)
IEC 61000-4-2 Contact (ESD)
ESD
16000
400
20000
20000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Non-repetitive current pulse per Figure 1 (Pin 5 to Pin 2)
TSOP-6 LOW CAPACITANCE
DIODE TVS ARRAY
500 WATTS PEAK POWER
6 VOLTS
MARKING DIAGRAM
Device
Package
Shipping
ORDERING INFORMATION
NUP4201MR6T1
TSOP-6
3000/Tape & Reel
TSOP-6
CASE 318G
PLASTIC
1
6
PIN CONFIGURATION
AND SCHEMATIC
6 I/O
5 V
P
4 I/O
I/O 1
V
N
2
I/O 3
http://onsemi.com
63 = Specific Device Code
M
= Date Code
63
M
NUP4201MR6T1G
TSOP-6
(Pb-Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUP4201MR6
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2
ELECTRICAL CHARACTERISTICS
(T
J
=25
C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
V
RWM
(Note 2)
5.0
V
Breakdown Voltage
V
BR
I
T
=1 mA, (Note 3)
6.0
V
Reverse Leakage Current
I
R
V
RWM
= 5 V
5.0
m
A
Clamping Voltage
V
C
I
PP
= 5 A (Note 4)
12.5
V
Clamping Voltage
V
C
I
PP
= 8 A (Note 4)
20
V
Maximum Peak Pulse Current
I
PP
8x20
m
s Waveform
25
A
Junction Capacitance
C
J
V
R
= 0 V, f=1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
C
J
V
R
= 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Non-repetitive current pulse per Figure 1 (Pin 5 to Pin 2)
TYPICAL PERFORMANCE CURVES
(T
J
= 25
C unless otherwise noted)
Figure 1. Pulse Derating Curve
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
C)
Figure 2. 8
20
m
s Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
t, TIME (
m
s)
% OF PEAK PULSE CURRENT
t
P
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
m
s
PEAK VALUE I
RSM
@ 8
m
s
HALF VALUE I
RSM
/2 @ 20
m
s
80
Figure 3. Junction Capacitance vs Reverse Voltage
5.0
2.5
0.0
0
1
V
BR
, REVERSE VOLTAGE (V)
JUNCTION CAP
ACIT
ANCE (pF)
2
3
4
5
I/O lines
I/O-Ground
PEAK POWER DISSIP
A
TION (%)
4.5
2.0
4.0
1.5
3.5
1.0
3.0
0.5
Figure 4. Clamping Voltage vs. Peak Pulse Current
(8 x 20
m
s Waveform)
20
10
0
0
10
PEAK PULSE CURRENT (A)
CLAMPING VOL
T
AGE (V)
20
30
40
50
18
8
16
6
14
4
12
2
NUP4201MR6
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3
PACKAGE DIMENSIONS
TSOP-6
CASE 318G-02
ISSUE N
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.1142 0.1220
2.90
3.10
B
0.0512 0.0669
1.30
1.70
C
0.0354 0.0433
0.90
1.10
D
0.0098 0.0197
0.25
0.50
G
0.0335 0.0413
0.85
1.05
H
0.0005 0.0040
0.013
0.100
J
0.0040 0.0102
0.10
0.26
K
0.0079 0.0236
0.20
0.60
L
0.0493 0.0610
1.25
1.55
M
0
10
0
10
S
0.0985 0.1181
2.50
3.00
_
_
_
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
M
J
K
0.95
0.037
1.9
0.075
0.95
0.037
mm
inches
SCALE 10:1
1.0
0.039
2.4
0.094
0.7
0.028
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NUP4201MR6
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4
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NUP4201MR6/D
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