Semiconductor Components Industries, LLC, 2004
March, 2004 - Rev. 1
1
Publication Order Number:
NUP5120/D
NUP5120X6
5-Line Transient Voltage
Suppressor Array
This 5-line voltage transient suppressor array is designed for
application requiring transient voltage protection capability. It is
intended for use in over-transient voltage and ESD sensitive
equipment such as cell phones, portables, computers, printers and
other applications. This device features a monolithic common cathode
design which protects five independent lines in a single
SOT-563 package.
Features
Protects up to 5 Lines in a Single SOT-563 Package
ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model
and Class C (Exceeding 400 V) per Machine Model.
Compliance with IEC 61000-4-2 (ESD) 15 kV (Air), 8 kV (Contact)
Applications
Hand Held Portable Applications
Serial and Parallel Ports
Notebooks, Desktops, Servers
MAXIMUM RATINGS
(T
J
= 25
C, unless otherwise specified)
Symbol
Rating
Value
Unit
P
PK
1
Peak Power Dissipation
8x20
m
sec double exponential waveform,
(Note 1)
90
W
T
J
Operating Junction Temperature Range
-40 to 125
C
T
STG
Storage Temperature Range
-55 to 150
C
T
L
Lead Solder Temperature Maximum
(10 seconds)
260
C
ESD
Human Body Model (HBM)
Machine Model (MM)
IEC 61000-4-2 Air (ESD)
IEC 61000-4-2 Contact (ESD)
16000
400
15000
8000
V
1. Non-repetitive current pulse per Figure 1.
SOT-563
CASE 463A
STYLE 6
1 2
3
6
5 4
RN = Specific Device Code
D
= Date Code
MARKING
DIAGRAM
RN D
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
NUP5120X6T1
SOT-563
4000/Tape & Reel
1
2
3
6
5
4
PIN ASSIGNMENT
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
SOT-563 5-LINE TRANSIENT
VOLTAGE SUPPRESSOR
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NUP5120X6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
(Note 2)
V
RWM
-
5.0
V
Breakdown Voltage
I
T
= 1 mA, (Note 3)
V
BR
6.2
6.8
7.2
V
Reverse Leakage Current
V
RWM
= 3 V
I
R
-
0.01
0.5
m
A
Capacitance
V
R
= 0 V, f = 1 MHz
(Line to GND)
C
J
-
54
70
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
NUP5120X6
http://onsemi.com
3
Figure 1. Power Derating vs. Ambient
Temperature
PULSE DURATION (
S)
100
10
1
100
10
1000
PEAK POWER (W)
Figure 2. Peak Power vs. Pulse Duration
Figure 3. Peak Current vs. Clamp Voltage
V
CL
, CLAMP VOLTAGE (V)
16
10
8
6
I
PP
, PEAK CURRENT (A)
14
12
1
0.1
10
100
V
R
, REVERSE VOLTAGE (V)
6
5
4
3
2
1
0
60
50
40
30
20
10
0
C
T
, TYPICAL CAP
ACIT
ANCE (pF)
Figure 4. Typical Capacitance vs. Reverse
Voltage
Figure 5. Reverse Current vs. Reverse Voltage
REVERSE VOLTAGE (V)
4
3
2
1
REVERSE CURRENT (nA)
6
5
0.1
10
0.01
100
1000
T
J
= 25
C
FORWARD VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
0.01
0.001
1
FOR
W
ARD CURRENT (A)
Figure 6. Typical Forward Current vs. Forward
Voltage
T
A
, AMBIENT TEMPERATURE (
C)
150
125
100
75
50
25
0
80
60
40
20
0
100
120
% OF RA
TED POWER OR I
PP
1
T
J
= 125
C
T
J
= 25
C
T
J
= 125
C
NUP5120X6
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4
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE B
G
M
0.08 (0.003)
X
D
6
5 PL
C
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
MIN
MAX
MIN
MAX
INCHES
1.50
1.70
0.059
0.067
MILLIMETERS
B
1.10
1.30
0.043
0.051
C
0.50
0.60
0.020
0.024
D
0.17
0.27
0.007
0.011
G
0.50 BSC
0.020 BSC
J
0.08
0.18
0.003
0.007
K
S
A
B
Y
1
2
3
4
5
S
K
0.004
0.012
0.059
0.067
0.10
0.30
1.50
1.70
6
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.35
0.0531
0.5
0.0197
mm
inches
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
STYLE 6:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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Phone: 81-3-5773-3850
NUP5120/D
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