Semiconductor Components Industries, LLC, 2005
October, 2005 - Rev. 0
1
Publication Order Number:
NUP8010MN/D
NUP8010MN
Low Capacitance Transient
Voltage Suppressor Array
This integrated transient voltage suppressor device (TVS) is
designed for applications requiring transient overvoltage protection. It
is intended for use in sensitive equipment such as computers, printers,
business machines, communication systems, medical equipment, and
other applications. Its integrated design provides very effective and
reliable protection for eight separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Features
Low Capacitance
Low Leakage Current < 1
mA @ 3 V
ESD Ratings:
18 kV (Contact)
30 kV (Air)
Machine Model = C
Human Body Model = 3B
DFN Package, 1.6 x 1.6 mm
Moisture Sensitivity Level 1
This is a Pb-Free Device*
Benefits
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects the Line Against Transient Voltage Conditions in Either
Direction
Minimize Power Consumption of the System
Minimize PCB Board Space
Applications
ESD Protection for Data Lines
Wireless Phones
Handheld Products
Notebook Computers
LCD Displays
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
NUP8010MNT1G
DFN8
(Pb-Free)
3000 / Tape & Reel
MARKING
DIAGRAM
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
8
5P = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
5P M
G
G
1
1
(Top View)
8
2
7
3
6
4
5
PIN CONNECTIONS
GND
(Bottom View)
8
7
6
5
1
2
3
4
DFN8
CASE 506AK
NUP8010MN
http://onsemi.com
2
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000-4-2
Air Discharge
Contact Discharge
V
PP
15
8.0
kV
Peak Power Dissipation (8 x 20
m
S @ T
A
= 25
C)
P
pk
(Note 1)
20
W
Operating Temperature Range
T
OP
-40 to 85
C
Storage Temperature Range
T
STG
-55 to 150
C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
T
L
260
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current per Figure 4.
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
V
RWM
3.0
V
Breakdown Voltage
V
BR
I
R
= 1.0 mA
5.3
5.6
5.9
V
Leakage Current
I
R
V
RWM
= 3.3 V
0.01
1.0
m
A
Clamping Voltage
V
c
I
PP
= 1.6 A
13
V
Capacitance
C
d
f = 1 MHz, V
R
= 0 V
13
17
pF
Capacitance
C
d
f = 1 MHz, V
R
= 3.0 V
7.0
11.5
pF
NUP8010MN
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3
TYPICAL PERFORMANCE CURVES
(T
A
= 25
C unless otherwise specified)
Figure 1. Pulse Width
100
10
1
1
10
100
1000
t, TIME (
m
s)
P
pk
, PEAK SURGE POWER (W)
Figure 2. Power Derating Curve
T
A
, AMBIENT TEMPERATURE (
C)
150
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
100
110
% OF RA
TED POWER OR I
PP
Figure 3. Reverse Leakage versus Temperature
0.16
0.02
0
-60
0
80
100
T, TEMPERATURE (
C)
I
R
, REVERSE LEAKAGE (
m
A)
-40
-20
60
40
20
0.04
0.06
0.08
0.10
0.12
0.14
Figure 4. 8
20
m
s Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
t, TIME (
m
s)
% OF PEAK PULSE CURRENT
t
r
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
m
s
HALF VALUE I
RSM
/2 @ 20
m
s
t
P
PEAK VALUE I
RSM
@ 8
m
s
V
F
, FORWARD VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.01
0.001
1
I
F
, FOR
W
ARD CURRENT (A)
T
A
= 25
C
Figure 5. Forward Voltage
NUP8010MN
http://onsemi.com
4
PACKAGE DIMENSIONS
DFN8
CASE 506AK-01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
4. EXPOSED PADS CONNECTED TO DIE FLAG.
USED AS TEST CONTACTS.
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
8X
0.10
B
0.05
A
C
C
K
8X
NOTE 3
2X
NOTE 4
2X
0.15 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.15 C
8X
A
A1
(A3)
0.08 C
0.10 C
C
SEATING
PLANE
SIDE VIEW
(A3)
L
8X
1
4
5
8
DIM
MIN
MAX
MILLIMETERS
A
0.80
1.00
A1
0.00
0.05
A3
0.20 REF
b
0.15
0.25
D
1.60 BSC
D2
0.70
0.90
E
1.60 BSC
E2
0.30
0.50
e
0.40 BSC
K
0.20
---
L
0.20
0.40
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 20:1
0.902
0.0355
0.924
0.0364
0.490
0.0193
0.400
0.0157
PITCH
0.502
0.0197
0.200
0.0079
3X
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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NUP8010MN/D
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