Semiconductor Components Industries, LLC, 2002
May, 2002 Rev. 2
1
Publication Order Number:
NZF220TT1/D
NZF220TT1
EMI Filter with ESD
Protection
Features:
EMI/RFI Bidirectional "Pi" LowPass Filters
ESD Protection Meets IEC6100042
Diode Capacitance: 7 10 pF
Zener/Resistor Line Capacitance: 22
20% pF
Low Zener Diode Leakage: 1
mA Maximum
Zener Breakdown Voltage; 6 8 Volts
Benefits:
Designed to suppress EMI/RFI Noise in Systems Subjected to
Electromagnetic Interference
Small Package Size Minimizes Parasitic Inductance, Thus a More
"Ideal" Low Pass Filtering Response
Typical Applications:
Cellular Phones
Communication Systems
Computers
Portable Products with Input/Output Conductors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
8
20
m
s Pulse
P
PK
14
Watts
Maximum Junction Temperature
T
J
150
C
1. All diodes under power
SC75
CASE 463
STYLE 4
Device
Package
Shipping
ORDERING INFORMATION
NZF220TT1
SC75
3000/Tape & Reel
1
2
CIRCUIT DESCRIPTION
X6 D
MARKING DIAGRAM
3
2
3
1
X6 = Specific Device Code
D = Date Code
http://onsemi.com
NZF220TT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Min
Typ
Max
Unit
V
Z
Zener Breakdown Voltage, @ I
ZT
= 1 mA
6.0
8.0
V
I
r
Zener Leakage Current, @ V
R
= 3 V
N/A
1.0
m
A
V
F
Zener Forward Voltage, @ I
F
= 50 mA
N/A
1.25
V
Capacitance
Zener Internal Capacitance, @ 0 V Bias
7.0
10
pF
Capacitance
Zener/Resistor Array Line Capacitance
17.6
26.4
pF
Resistor
Resistance
90
110
W
F
C
(Note 2)
Cutoff Frequency
220
MHz
2. 50
W
Source and 50
W
Lead Termination per Figure 2
Applications Information
Suppressing Noise at the Source
Filter all I/O signals leaving the noisy environment
Locate I/O driver circuits close to the connector
Use the longest rise/fall times possible for all digital signals
Reducing Noise at the Receiver
Filter all I/O signals entering the unit
Locate the I/O filters as close as possible to the connector
Minimizing Noise Coupling
Use multilayer PCBs to minimize power and ground inductance
Keep clock circuits away from the I/O connector
Ground planes should be used whenever possible
Minimize the loop area for all high speed signals
Provide for adequate power decoupling
ESD Protection
Locate the suppression devices as close to the I/O connector as possible
Minimize the PCB trace length to the suppression device
Minimize the PCB trace length for the ground return for the suppression device
NZF220TT1
http://onsemi.com
3
Frequency Response Specification
50
W
50
W
NZF220T
SPECTRUM
ANALYZER
TRACKING
GENERATOR
V
in
V
out
V
G
Test Conditions:
Source Impedance = 50
W
Load Impedance = 50
W
Input Power = 0 dB
TEST BOARD
TG OUTPUT
RF INPUT
Figure 1. Measurement Conditions
NZF220T
Figure 2. Typical EMI Filter Response
(50
W
Source and 50
W
Lead Termination)
GAIN (dB)
1.0
10
100
1000
f, FREQUENCY (MHz)
6.3
3000
50
OUTPUT
3 dB = 220 MHz
Y
Y
NZF220TT1
http://onsemi.com
4
OUTLINE DIMENSIONS
EMI Filter with ESD Protection
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.70
0.80
0.028
0.031
B
1.40
1.80
0.055
0.071
C
0.60
0.90
0.024
0.035
D
0.15
0.30
0.006
0.012
G
1.00 BSC
0.039 BSC
H
---
0.10
---
0.004
J
0.10
0.25
0.004
0.010
K
1.45
1.75
0.057
0.069
L
0.10
0.20
0.004
0.008
S
0.50 BSC
0.020 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008)
B
A
B
S
D
G
3 PL
0.20 (0.008) A
K
J
L
C
H
3
2
1
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SC75/SOT416
CASE 46301
ISSUE B
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NZF220TT1/D
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
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