Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 0
1
Publication Order Number:
NZQA5V6XV5T1/D
NZQA5V6XV5T1 Series
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features
SOT-553 Package Allows Four Separate Unidirectional
Configurations
Low Leakage < 1
mA @ 3 Volt for NZQA5V6XV5T1
Breakdown Voltage: 5.6 Volt - 6.8 Volt @ 1 mA
ESD Protection Meeting IEC61000-4-2 - Level 4
Mechanical Characteristics
Void Free, Transfer-Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
100% Lead Free, MSL1 @ 260
C Reflow Temperature
SOT-553
CASE 463B
PLASTIC
5
4
1
2
3
Device
Package
Shipping
ORDERING INFORMATION
NZQA5V6XV5T1
SOT-553
4000/Tape & Reel
xx
= Device Marking
D
= One Digit Date Code
MARKING DIAGRAM
xx D
http://onsemi.com
NZQA6V2XV5T1
SOT-553
4000/Tape & Reel
NZQA6V8XV5T1
SOT-553
4000/Tape & Reel
NZQA5V6XV5T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Q
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
Uni-Directional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20
m
s @ T
A
= 25
C) (Note 1)
P
PK
100
W
Steady State Power - 1 Diode (Note 2)
P
D
300
mW
Thermal Resistance Junction to Ambient
Above 25
C, Derate
R
q
JA
370
2.7
C/W
mW/
C
Maximum Junction Temperature
T
Jmax
150
C
Operating Junction and Storage Temperature Range
T
J
T
stg
-55 to +150
C
ESD Discharge
MIL STD 883C - Method 3015-6
IEC1000-4-2, Air Discharge
IEC1000-4-2, Contact Discharge
V
PP
16
16
9
kV
Lead Solder Temperature (10 seconds duration)
T
L
260
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
Device
Breakdown Voltage
V
BR
@ 1 mA (Volts)
Leakage Current
I
RM
@ V
RM
V
C
Max @ I
PP
Typ Capacitance
@ 0 V Bias
(Note 3)
Max
V
F
@ I
F
=
200 mA
Device
Device
Marking
Min
Nom
Max
V
RWM
I
RWM
(
m
A)
V
C
(V)
I
PP
(A)
(pF)
(V)
NZQA5V6XV5T1
56
5.32
5.6
5.88
3.0
1.0
10.5
10
90
1.3
NZQA6V2XV5T1
62
5.89
6.2
6.51
4.0
0.5
11.5
9.0
80
1.3
NZQA6V8XV5T1
68
6.46
6.8
7.14
4.3
0.1
12.5
8.0
70
1.3
1. Non-repetitive current per Figure 1.
2. Only 1 diode under power. For all 4 diodes under power, P
D
will be 25%. Mounted on FR-4 board with min pad.
3. Capacitance of one diode at f = 1 MHz, V
R
= 0 V, T
A
= 25
C
NZQA5V6XV5T1 Series
http://onsemi.com
3
Figure 1. Pulse Waveform
t, TIME (
m
s)
30
15
10
5
0
PERCENT OF I
PP
25
20
90
80
70
60
50
40
30
20
10
0
100
110
WAVEFORM
PARAMETERS
t
r
= 8
m
s
t
d
= 20
m
s
t
d
= I
PP
/2
c-t
T
A
, AMBIENT TEMPERATURE (
C)
150
125
100
75
50
25
0
90
80
70
60
50
40
30
20
10
0
100
110
% OF RA
TED POWER OR I
PP
Figure 2. Power Derating Curve
Figure 3. Clamping Voltage versus
Peak Pulse Current
I
PP
, PEAK PULSE CURRENT (A)
12.5
11
1
6
4
2
0
10
V
C
, CLAMPING VOL
T
AGE (V)
8
14
12
Figure 4. Typical Capacitance
V
BR
, BREAKDOWN VOLTAGE (V)
6.8
6.2
5.6
70
60
50
0
80
90
C, CAP
ACIT
ANCE (pF)
100
30
20
10
40
7.1
6.5
5.9
5.3
13.5
3
5
7
9
10
NZQA5V6XV5T1
NZQA6V2XV5T1
NZQA6V8XV5T1
NZQA5V6XV5T1 Series
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT-553, 5-LEAD
CASE 463B-01
ISSUE O
G
M
0.08 (0.003)
X
D
5 PL
C
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
DIM
A
MIN
MAX
MIN
MAX
INCHES
1.50
1.70
0.059
0.067
MILLIMETERS
B
1.10
1.30
0.043
0.051
C
0.50
0.60
0.020
0.024
D
0.17
0.27
0.007
0.011
G
0.50 BSC
0.020 BSC
J
0.08
0.18
0.003
0.007
K
S
STYLE 1:
PIN 1. BASE 1
2. EMITTER 1/2
3. BASE 2
4. COLLECTOR 2
5. COLLECTOR 1
A
B
Y
1
2
3
4
5
S
K
STYLE 2:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
0.004
0.012
0.059
0.067
0.10
0.30
1.50
1.70
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NZQA5V6XV5T1/D
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P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada
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