Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
60
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
5.0
Vdc
Collector Current -- Continuous
I
C
600
mAdc
Total Device Dissipation @ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(1)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60
--
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10
m
Adc, I
E
= 0)
V
(BR)CBO
60
--
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
CEX
--
50
nAdc
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
(V
CB
= 50 Vdc, I
E
= 0, T
A
= 150
C)
I
CBO
--
--
0.01
10
Adc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc)
I
EBO
--
10
nAdc
Collector Cutoff Current
(V
CE
= 10 V)
I
CEO
--
10
nAdc
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB(off)
= 0.5 Vdc)
I
BEX
--
50
nAdc
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 1
1
Publication Order Number:
P2N2907A/D
P2N2907A
CASE 2911, STYLE 17
TO92 (TO226AA)
1
2
3
COLLECTOR
1
2
BASE
3
EMITTER
P2N2907A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(1)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
(1)
h
FE
75
100
100
100
50
--
--
--
300
--
--
CollectorEmitter Saturation Voltage
(1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
--
--
0.4
1.6
Vdc
BaseEmitter Saturation Voltage
(1)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
--
--
1.3
2.6
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain -- Bandwidth Product
(1), (2)
(I
C
= 50 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
200
--
MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
--
8.0
pF
Input Capacitance
(V
EB
= 2.0 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
--
30
pF
SWITCHING CHARACTERISTICS
TurnOn Time
(V
30 Vd
I
150
Ad
t
on
--
50
ns
Delay Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= 15 mAdc) (Figures 1 and 5)
t
d
--
10
ns
Rise Time
I
B1
= 15 mAdc) (Figures 1 and 5)
t
r
--
40
ns
TurnOff Time
(V
6 0 Vd
I
150
Ad
t
off
--
110
ns
Storage Time
(V
CC
= 6.0 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
s
--
80
ns
Fall Time
I
B1
= I
B2
= 15 mAdc) (Figure 2)
t
f
--
30
ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. f
T
is defined as the frequency at which |h
fe
| extrapolates to unity.
0
0
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
+15 V -6.0 V
1.0 k
37
50
1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME
5.0 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
INPUT
Z
o
= 50
PRF = 150 PPS
RISE TIME
2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
P2N2907A
http://onsemi.com
4
TYPICAL SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25
C
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
10
0.01
Figure 8. Source Resistance Effects
R
s
, SOURCE RESISTANCE (OHMS)
NF
, NOISE FIGURE (dB)
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= -50
A
-100
A
-500
A
-1.0 mA
R
s
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100
10
8.0
6.0
4.0
2.0
0
50 100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k
I
C
= -1.0 mA, R
s
= 430
-500
A, R
s
= 560
-50
A, R
s
= 2.7 k
-100
A, R
s
= 1.6 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
30
Figure 10. CurrentGain -- Bandwidth Product
I
C
, COLLECTOR CURRENT (mA)
C, CAP
ACIT
ANCE (pF)
-0.1
2.0
Figure 11. "On" Voltage
I
C
, COLLECTOR CURRENT (mA)
-1.0
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= -10 V
R
qVC
for V
CE(sat)
f T
, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
COEFFICIENT
(mV/
C)
20
10
7.0
5.0
3.0
-0.2 -0.3 -0.5
-1.0
-2.0 -3.0 -5.0
-10
-20
-30
400
300
200
100
80
60
40
30
20
-1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-500 -1000
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
C
eb
C
cb
V
CE
= -20 V
T
J
= 25
C
R
qVB
for V
BE
P2N2907A
http://onsemi.com
8
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