Semiconductor Components Industries, LLC, 2003
February, 2003 - Rev. 2
1
Publication Order Number:
NUP4301MR6T1/D
NUP4301MR6T1
Low Capacitance Diode
Array for ESD Protection in
Four Data Lines
NUP4301MR6T1 is a MicroIntegration
TM
device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (1.5 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000-4-2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Applications
USB 1.1 and 2.0 Data Line Protection
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
MAXIMUM RATINGS
(Each Diode) (T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
70
Vdc
Forward Current
I
F
200
mAdc
Peak Forward Surge Current
I
FM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
V
RRM
70
V
Average Rectified Forward
Current (Note 1)
(averaged over any 20 ms period)
I
F(AV)
715
mA
Repetitive Peak Forward Current
I
FRM
450
mA
Non-Repetitive Peak Forward Current
t = 1.0
m
s
t = 1.0 ms
t = 1.0 S
I
FSM
2.0
1.0
0.5
A
1. FR-5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP4301MR6T1
TSOP-6
3000/Tape & Reel
MARKING DIAGRAM
TSOP-6
CASE 318F
PLASTIC
http://onsemi.com
64
d
64 = Specific Device Code
d
= Date Code
1
6
6 I/O
5 V
P
4 I/O
I/O 1
V
N
2
1/O 3
2
5
3
4
PIN CONFIGURATION
AND SCHEMATIC
NUP4301MR6T1
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction-to-Ambient
R
q
JA
556
C/W
Lead Solder Temperature
Maximum 10 Seconds Duration
T
L
260
C
Junction Temperature
T
J
-40 to +85
C
Storage Temperature
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100
m
A)
V
(BR)
70
-
-
Vdc
Reverse Voltage Leakage Current
(V
R
= 70 Vdc)
(V
R
= 25 Vdc, T
J
= 150
C)
(V
R
= 70 Vdc, T
J
= 150
C)
I
R
-
-
-
-
-
-
2.5
30
50
m
Adc
Capacitance (between I/O pins)
(V
R
= 0 V, f = 1.0 MHz)
C
D
-
0.8
1.5
pF
Capacitance (between I/O pin and ground)
(V
R
= 0 V, f = 1.0 MHz)
C
D
-
1.6
3
pF
Forward Voltage
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
-
-
-
-
-
-
-
-
715
855
1000
1250
mV
dc
1. FR-5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
NUP4301MR6T1
http://onsemi.com
3
100
0.2
0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6
0.8
1.0
1.2
10
1.0
0.1
T
A
= 85
C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10
20
30
40
50
1.75
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.5
1.25
1.0
0.75
C D
, DIODE CAP
ACIT
ANCE (pF)
2
4
6
8
I F
, FOR
W
ARD CURRENT
(mA)
Figure 1. Forward Voltage
Figure 2. Leakage Current
Figure 3. Capacitance
T
A
= -40
C
T
A
= 25
C
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 55
C
T
A
= 25
C
I R
, REVERSE CURRENT
(
A)
Curves Applicable to Each Cathode
NUP4301MR6T1
http://onsemi.com
4
PACKAGE DIMENSIONS
TSOP-6
CASE 318F-04
ISSUE J
2
3
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A 0.1142 0.1220
2.90
3.10
B 0.0512 0.0669
1.30
1.70
C 0.0354 0.0433
0.90
1.10
D 0.0098 0.0197
0.25
0.50
G 0.0335 0.0413
0.85
1.05
H 0.0005 0.0040
0.013
0.100
J 0.0040 0.0102
0.10
0.26
K 0.0079 0.0236
0.20
0.60
L 0.0493 0.0649
1.25
1.65
M
0
10
0
10
S 0.0985 0.1181
2.50
3.00
_
_
_
_
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM
LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. 318F-01, -02, -03 OBSOLETE. NEW
STANDARD 318F-04.
M
J
K
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NUP4301MR6T1/D
MicroIntegration is a trademarks of Semiconductor Components Industries, LLC (SCILLC).
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