Semiconductor Components Industries, LLC, 2003
August, 2003 - Rev. P0
1
Publication Order Number:
SMBJ12AON/D
SMBJ12AONT3
Product Preview
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional*
The SMBJ12AONT3 is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMBJ12AONT3 is ideally
suited for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
b u s i n e s s m a c h i n e s , p o w e r s u p p l i e s , a n d m a n y o t h e r
industrial/consumer applications.
Specification Features:
Working Peak Reverse Voltage Range - 12 V
Peak Power - 600 Watts @ 1 ms at Maximum Clamp Voltage @
Peak Pulse Current
ESD Rating of Class 3 (>16 KV) per Human Body Model
ESD Rating IEC 61000 -4.2 Level 4
Low Leakage < 5
mA at 12 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
C for 10 Seconds
LEADS:
Modified L-Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ABSOLUTE MAXIMUM RATINGS
Please See the Table on the Following Page
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
Devices listed in
bold, italic are ON Semiconductor
Preferred devices. Preferred devices are recommended
choices for future use and best overall value.
Device
{
Package
Shipping
ORDERING INFORMATION
SMBJ12AONT3
SMB
2500/Tape & Reel
SMB
CASE 403A
PLASTIC
http://onsemi.com
Cathode
Anode
Y
= Year
WW
= Work Week
LEM
= Specific Device Code
YWW
LEM
MARKING DIAGRAM
The "T3" suffix refers to a 13 inch reel.
SMBJ12AONT3
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2
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
C
Measured Zero Lead Length (Note 2)
Derate Above 75
C
Thermal Resistance from Junction to Lead
P
D
R
q
JL
3.0
40
25
W
mW/
C
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
C
Derate Above 25
C
Thermal Resistance from Junction to Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/
C
C/W
Forward Surge Current (Note 4) @ T
A
= 25
C
I
FSM
100
A
Operating and Storage Temperature Range
T
J
, T
stg
-65 to +150
C
1. 10 X 1000
m
s, non-repetitive at maximum I
PPM
and V
CM
, see electrical characteristics.
2. 1
square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non-repetitive duty cycle.
Uni-Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Zener Voltage (Note 6)
IT = 1 mA
V
Z
13.2
13.75
14.3
V
Reverse Leakage Current
V
RWM
= 12 V
I
R
5.0
m
A
Clamping Voltage
I
PP
= 17.5 A
(Per Figure 1)
V
C
15.6
V
Absolute Maximum Clamping Voltage
I
PPM
= 30.2 A
(Per Figure 1, Note 7)
V
CM
19.9
V
6. VZ measured at pulse test IT at an ambient temperature of 25
C.
7. Absolute Maximum Peak Current, I
PPM
.
SMBJ12AONT3
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3
0
1
2
3
4
0
50
100
t, TIME (ms)
V
ALUE (%)
HALF VALUE - I
PP
2
PEAK VALUE - I
PP
t
r
10 ms
Figure 1. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
V
in
V
L
Z
in
LOAD
Figure 2. Pulse Derating Curve
PEAK PULSE DERA
TING IN % OF
PEAK POWER OR CURRENT
@
T A
= 25
C
100
80
60
40
20
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
C)
120
140
160
t
P
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
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4
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 3.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 4. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
If the duty cycle increases, the peak power must be
reduced as indicated by the curves of Figure 5. Average
power must be derated as the lead or ambient temperature
rises above 25
C. The average power derating curve
normally given on data sheets may be normalized and used
for this purpose.
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
in
(TRANSIENT)
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 3.
Figure 4.
Figure 5. Typical Derating Factor for Duty Cycle
DERA
TING F
ACT
OR
1 ms
10
m
s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100
m
s
0.1 0.2
0.5
2
5
10
50
1
20
100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
SMBJ12AONT3
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5
UL RECOGNITION
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric
Voltage-Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
SMBJ12AONT3
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6
PACKAGE DIMENSIONS
600 Watt Peak Power
Transient Voltage Suppressors - Surface Mounted
SMB
DO-214AA
CASE 403A-03
ISSUE D
SMB Footprint
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H 0.0020 0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
mm
inches
0.085
2.159
0.108
2.743
0.089
2.261
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051
Phone: 81-3-5773-3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
SMBJ12AON/D
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