1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for generalpurpose amplifier and low frequency switching applications.
High DC Current Gain -- Min hFE = 1000 @ IC = 5 A, VCE = 4 V
CollectorEmitter Sustaining Voltage -- @ 30 mA
VCEO(sus) = 60 Vdc (Min) -- TIP140, TIP145
VCEO(sus) =
80 Vdc (Min) -- TIP141, TIP146
VCEO(sus) =
100 Vdc (Min) -- TIP142, TIP147
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistor
MAXIMUM RATINGS
Rating
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak (1)
IC
10
15
Adc
Base Current -- Continuous
IB
0.5
Adc
Total Device Dissipation
@ TC = 25
_
C
PD
125
Watts
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
_
C/W
Thermal Resistance, Case to Ambient
R
JA
35.7
_
C/W
(1) 5 ms,
v
10% Duty Cycle.
DARLINGTON SCHEMATICS
BASE
EMITTER
COLLECTOR
8.0 k
40
BASE
EMITTER
COLLECTOR
8.0 k
40
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP140/D
Motorola, Inc. 1996
TIP140
TIP141
TIP142
TIP145
TIP146
TIP147
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 100 VOLTS
125 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 340D02
REV 1
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
VCEO(sus)
60
80
100
--
--
--
--
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP140, TIP145
(VCE = 40 Vdc, IB = 0)
TIP141, TIP146
(VCE = 50 Vdc, IB = 0)
TIP142, TIP147
ICEO
--
--
--
--
--
--
2.0
2.0
2.0
mA
Collector Cutoff Current
(VCB = 60 V, IE = 0)
TIP140, TIP145
(VCB = 80 V, IE = 0)
TIP141, TIP146
(VCB = 100 V, IE = 0)
TIP142, TIP147
ICBO
--
--
--
--
--
--
1.0
1.0
1.0
mA
Emitter Cutoff Current (VBE = 5.0 V)
IEBO
--
--
2 0
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
hFE
1000
500
--
--
--
--
--
CollectorEmitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
VCE(sat)
--
--
--
--
2.0
3.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
VBE(sat)
--
--
3.5
Vdc
BaseEmitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
VBE(on)
--
--
3.0
Vdc
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
(V
30 V I
5 0 A
td
--
0.15
--
s
Rise Time
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA Duty Cycle
v
2 0%
tr
--
0.55
--
s
Storage Time
IB = 20 mA, Duty Cycle
v
2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25
_
C)
ts
--
2.5
--
s
Fall Time
B1
B2,
C
B
, J
)
tf
--
2.5
--
s
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2.0%.
Figure 1. Switching Times Test Circuit
10
0.2
Figure 2. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME
(
s
)
5.0
2.0
0.5
0.1
0.5
1.0
3.0
5.0
10
20
0.2
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+12 V
V1
appox.
8.0 V
tr, tf
10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
30 V
RC
TUT
8.0 k
40
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
For NPN test circuit reverse diode and voltage polarities.
1.0
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
3
Motorola Bipolar Power Transistor Device Data
V
CE(SA
T)
, COLLECT
OREMITTER SA
TURA
TION
VOL
T
AGE (VOL
TS)
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
V
BE
, BASEEMITTER VOL
T
AGE (VOL
TS)
5000
0.5
Figure 3. DC Current Gain versus Collector Current
IC, COLLECTOR CURRENT (AMPS)
300
1.0
2.0
3.0
5.0
7.0
10
500
h
FE
, DC CURRENT
GAIN
VCE = 4.0 V
4.0
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
Figure 4. CollectorEmitter Saturation Voltage
5.0
75
TJ, JUNCTION TEMPERATURE (
C)
0.5
IC = 10 A, IB = 4.0 mA
2.0
3.0
4.0
75
TJ, JUNCTION TEMPERATURE (
C)
25
25
75
175
3.6
3.2
2.8
2.4
0.8
Figure 5. BaseEmitter Voltage
2000
1000
TJ = 150
C
25
C
55
C
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
TJ, JUNCTION TEMPERATURE (
C)
TJ, JUNCTION TEMPERATURE (
C)
125
20,000
1000
2000
3000
5000
10,000
7000
1.0
0.7
0.5
V
CE(SA
T)
, COLLECT
OREMITTER SA
TURA
TION
VOL
T
AGE (VOL
TS)
0.5
1.0
2.0
3.0
5.0
7.0
10
4.0
0.7
50
25
0
25
50
75
100
125
150
175
5.0
75
2.0
3.0
1.0
0.7
50
25
0
25
50
75
100
125
150
175
2.0
1.6
1.2
4.0
75
25
25
75
175
3.6
3.2
2.8
2.4
0.8
125
2.0
1.6
1.2
100
C
TJ = 150
C
100
C
25
C
55
C
VCE = 4.0 V
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
IC = 1.0 A, IB = 2.0 mA
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
VCE = 4.0 V
IC = 10 A
5.0 A
1.0 A
TYPICAL CHARACTERISTICS
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
4
Motorola Bipolar Power Transistor Device Data
ACTIVEREGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25
C
Figure 6. ActiveRegion Safe Operating Area
dc
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2.0
I C
, COLLECT
OR
CURRENT
(AMP) (mA)
10
10
0.2
5.0
20
1.0
20
TJ = 150
C
50
30
TIP140, 145
3.0
7.0
15
70
100
TIP141, 146
TIP142, 147
I C
, COLLECT
OR
CURRENT
(AMPS)
15
10
1.0
2.0
5.0
7.0
Figure 7. Unclamped Inductive Load
L, UNCLAMPED INDUCTIVE LOAD (mH)
0.5
1.0
2.0
5.0
10
20
50
100
100 mJ
INPUT
MPSU52
50
50
RBB1
1.5 k
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
TUT
VCE MONITOR
100 mH
VCC = 20 V
IC
MONITOR
RS = 0.1
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
VCE(sat)
20 V
COLLECTOR
VOLTAGE
V(BR)CER
w
7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
P
D
, POWER DISSIP
A
TION (W
A
TTS)
PNP
NPN
Figure 9. Magnitude of Common Emitter
SmallSignal ShortCircuit Forward
Current Transfer Ratio
f, FREQUENCY (MHz)
2.0
1.0
10
5.0
100
1.0
3.0
5.0
7.0
2.0
7.0
10
VCE = 10 V
IC = 1.0 A
TJ = 25
C
5.0
4.0
0
1.0
2.0
3.0
Figure 10. FreeAir Temperature
Power Derating
TA, FREEAIR TEMPERATURE (
C)
0
40
80
120
160
200
h
fe
, SMALLSIGNAL
FOR
W
ARD CURRENT
TRANSFER RA
TIO
20
50
70
PNP
NPN
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
20.35
0.801
B
14.70
15.20
0.579
0.598
C
4.70
4.90
0.185
0.193
D
1.10
1.30
0.043
0.051
E
1.17
1.37
0.046
0.054
G
5.40
5.55
0.213
0.219
H
2.00
3.00
0.079
0.118
J
0.50
0.78
0.020
0.031
K
31.00 REF
1.220 REF
L
16.20
0.638
Q
4.00
4.10
0.158
0.161
S
17.80
18.20
0.701
0.717
U
4.00 REF
0.157 REF
V
1.75 REF
0.069
1
2
3
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
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