Fea tures
Twice the power output of GaAs at the
same drive current
Characterized to define infrared energy
along the mechanical axis of the
device
Mechanically and spectrally matched
to the OP804TX/TXV and
OP805TX/TXV phototransistors
Screened per MIL-PRF-19500 TX or
TXV equivalent levels
De scrip tion
The OP235TX, TXV and OP236TX, TXV
are high reliability gallium aluminum
arsenide infrared emitting diodes
mounted in hermetic TO-46 packages.
The wavelength is centered at 890
nanometers to closely match the spectral
response of silicon photoransistors.
Devices are processed to Optek's 100%
screening and quality conformance
program patterned after MIL-PRF-19500.
After 100% screening, Group A and B are
performed on every lot, and a Group C
test is performed every six months.
The OP235TX, TXV and OP236TX, TXV
have lens cans providing a narrow beam
angle (18
o
between half power points).
The narrow beam angle and the specified
radiant intensity allow ease of design in
beam interrupt applications with the
OP804TX, TXV and OP805TX, TXV
series of high reliability phototransistors.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Op er at ing Tem pera ture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Stor age Tem pera ture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds max. when flow
soldering.
(2) Derate linearly 2.00 mW/
o
C above 25
o
C.
(3) E
e(APT)
is a measurement of the average radiant intensity within the cone formed by the
measurement surface. The cone is outlined by a radius of 1.429 inches (36.30 mm)
measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250
inches (6.35 mm) in diameter forming a 10
o
cone. E
e(APT)
is not necessarily uniform within
the measured area.
Typical screening and lot acceptance tests are provided on page 13-4.
Prod uct Bul le tin OP235TX
Sep tem ber 1996
Hi- Reliability GaA lAs In fra red Emit ting Di odes
Types OP235TX, OP235TXV, OP236TX, OP236TXV
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
13-28
Types OP235TX, OP235TXV, OP236TX, OP236TXV
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
Sym bol
Pa rame ter
Min
Typ Max Units
Test Con di tions (3)
E
e(APT)
Apertured Radiant Incidence
(3,4)
OP235TX,TXV
OP236TX,TXV
1.5
3.5
mW/cm
2
mW/cm
2
I
F
= 100 mA
I
F
= 100 mA
V
F
Forward Voltage
(6)
1.1
1.3
0.9
2.0
2.2
1.8
V
V
V
I
F
= 100 mA
I
F
= 100 mA, T
A
= -55
o
C
I
F
= 100 mA, T
A
= 100
o
C
I
R
Reverse Current
100
A
V
R
= 2.0 V
p
Wavelength at Peak Emission
890
nm
I
F
= 100 mA
B
Spectral Bandwidth Between Half Power
Points
50
nm
I
F
= 100 mA
HP
Emission Angle at Half Power Points
18.0
Deg. I
F
= 100 mA
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
13-29
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