Fea tures
Wide receiving angle
Variety of sensitivity ranges
Side-looking package for space
limited applications
Base-emitter resistor provides
ambient light protection
De scrip tion
The OP750 series devices consist of an
NPN silicon phototransistor molded in a
clear epoxy package. The wide
receiving angle provides relatively even
reception over a large area. The side-
looking package is designed for easy
PC board mounting of slotted optical
switches or optical interrupt detectors.
This series is mechanically and
spectrally matched to the OP140 and
OP240 series of infrared emitting
diodes.
The phototransistor has an internal
base-emitter resistor which provides
protection from low level ambient
lighting conditions. This feature is also
useful when the media being detected is
semi-transparent to infrared light in
interruptive applications.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
A.
Typi cal Per form ance Curves
Prod uct Bul le tin OP750
June 1999
NPN Pho to tran sis tor with Base- Emitter Resistor
Types OP750A, OP750B, OP750C, OP750D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Typi cal Spec tral Re sponse
Wave length - nm
7
Sche matic
Types OP750A, OP750B, OP750C, OP750D
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN
TYP
MAX UNITS
TEST CON DI TIONS
I
C(ON)
On-State Collector Current
OP750A
OP750B
OP750C
OP750D
2.25
1.50
0.85
0.85
7.00
4.20
2.80
7.00
mA
V
CE
= 5 V, E
e
= 1 mW/cm
2(3)
E
KP
Knee Point Irradiance
.03
mW/cm
2
V
CE
= 5 V
(4)
I
CEO
Collector-Emitter Dark Current
100
nA
V
CE
= 10 V, E
e
= 0
I
ECO
Emitter-Reverse Current
100
A
V
EC
= 0.4 V
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 100
A
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.4
V
I
C
= 100
A, E
e
= 1 mW/cm
2(3)
Typi cal Per form ance Curves
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Normalized Collector Current
vs. Angular Displacement
q
- Angluar Displacement - Deg.
Normalized Light and Dark
Current vs. Ambient Temperature
E
e
- Irradiance - mW/cm
2
On-State Collector Current
vs. Irradiance
Normalized Output vs.
Frequency
OP550
OP750
V
CE
= 5 V
LED: l = 935 nm
RL = 1KW
RL = 10KW
R
L
- Load Resistance - KW
Typical Rise and Fall Time vs.
Load Resistance
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1mS
Test Conditions:
Light source is pulsed LED with tr
and tf 500 ns.
IF is adjusted for VOUT = 1 Volt.
Switching Time
Test Circuit
120
105
90
75
60
45
30
15
0
T
A
- Ambient Temperature -
C
100
10
1
.1
.01
.001
.0001
1
.1
10
.01
.00001
.001
1000
100
10
0.0
1
0.5
1.0
Light Current
Dark Current
Frequency - KHz
V
R
= 1 V
V
CE
= 5 V
50% Duty Cycle
LED:
l
= 935 nm
0
2
4
6
8
10
8
LED = GaAIAs, l = 890 nm
VRL is voltage across RL
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