Fea tures
Supresses high frequency noise
Variety of sensitivity ranges
Wide receiving angle
Side looking package for space limited
applications
De scrip tion
The OP775 consists of an NPN
phototransistor and 1000 pF capacitor
molded in a blue tinted epoxy package.
The internal collector-emitter capacitor
allows the device to be used in
applications where external high
frequency emissions could compromise
signal integrity.
The device's wide receiving angle
provides relatively even reception over a
large area.
The OP775 is 100% production tested
using an infrared light source for close
correlation with Optek's GaAs and
GaAIAs emitters.
The side-looking package is designed for
easy PC board mounting of slotted
optical switches or optical interrupt
detectors.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Stor age and Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -40
C to +100
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
NOTES:
(1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.33 mW/
C above 25
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
phototransistor being tested.
(4) To calculate typical collector dark current in
A, use the formula
ICED
= 10
(0.040T
A
-3.4)
where
T
A
is ambient temperature in
C.
Typi cal Per form ance Curves
Prod uct Bul le tin OP775A
Feb ru ary 2000
NPN
Pho to tran sis tor with Collector- Emitter Capacitor
Types OP775A, OP775B, OP775C, OP775D
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
3-48
Typical Spectral Response
Wavelength - nm
Sche matic
Types OP775A, OP775B, OP775C, OP775D
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX UNITS
TEST CON DI TIONS
I
C(ON)
On-State Collector Current
OP775D
OP775C
OP775B
OP775A
0.70
0.70
1.20
1.80
5.50
2.25
3.40
5.50
mA
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2(3)
I
C
/
T
Relative I
C
Changes with Temperature
100
%/ C
V
CE
= 5.0 V, E
e
= 1.0 mW/cm
2
,
= 935 nm
I
CEO
Collector Dark Current
100
nA
V
CE
= 10.0 V, E
e
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5.0
V
I
E
= 100
A
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 100
A, E
e
= 1.0 mW/cm
2(3)
C
CE
Capacitance
1000
pF
V
R
= 0 V
Typi cal Per form ance Curves
Normalized Output
vs. Frequency
Frequency - KHz
R
L
- Load Resistance - K
160
140
120
100
80
60
40
20
0
0
2
OP775
4
6
8
10
VCC = 5 V
VRL = 1 V
f = 100 Hz
PW = 1 mS
LED = GaAIAs, = 890 nm
VRL is voltage across RL
OP555
Typical Rise and Fall Time
vs. Load Resistance
OP775
VRL = 1 V
VCE = 5 V
50% Duty Cycle
LED: = 935 nm
RL = 10 K
OP555
RL =
1.00
.75
0.50
0.25
0.00
1
10
100
1000
PDF 
ZIP