Fea tures
Narrow receiving angle
Linear response vs irradiance
Fast switching time
T-1 package style
Small package ideal for space limited
applications
De scrip tion
The OP906 device consists of a PIN
silicon photodiode molded in a clear
epoxy package which allows spectral
response from visible to infrared light
wavelengths. The narrow receiving angle
provides excellent on-axis coupling.
These devices are 100% production
tested using infrared light for close
correlation with Optek's GaAs and
GaAlAs emitters. Lead spacing is 0.100
inch (2.54 mm).
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Re verse Break down Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 1.67 mW/
o
C above 25
o
C.
(3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a
radiometric intensity level which varies less than 10% over the entire lens surface of the
photodiode being tested.
(4) To calculate typical dark current in nA, use the formula I
D
= 10
(0.042 T
A
-1.5)
where T
A
is
ambient temperature in
o
C.
Typi cal Per form ance Curves
Prod uct Bul le tin OP906
June 1996
PIN Sili con Pho to di ode
Type OP906
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
Relative Response vs.
Wavelength
- Wave length - nm
Coupling Characteristics
OP906 and OP266
Dis tance Be tween Lens Tips -inches
V
R
= 5 V
I
F
= 20 mA
3-54
Type OP906
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN TYP MAX UNITS
TEST CON DI TIONS
I
L
Reverse Light Current
16
35
A
V
R
= 5 V, E
e
= 0.50 mW/cm
2(3)
I
D
Reverse Dark Current
1
60
nA
V
R
= 30 V, E
e
= 0
V
(BR)R
Reverse Breakdown Voltage
60
V
I
R
= 100
A
V
F
Forward Voltage
1.2
V
I
F
= 1 mA
C
T
Total Capacitance
4
pF
V
R
= 20 V, E
e
= 0, f = 1.0 MHz
t
r
, t
f
Rise Time, Fall Time
5
ns
V
R
= 20 V,
= 850 nm, R
L
= 50
Typi cal Per form ance Curves
Light Current vs. Irradiance
Switching Time Test Circuit
Light Current vs. Angular
Displacement
- Angular Displacement - Deg.
Test Conditions:
= 935 nm
V
R
= 5 V
Distance Lens to
Lens = 1.5 inches
E
e
- Irradiance - mW/cm
2
V
R
= 5 V
T
A
= 25
o
C
= 935 nm
Normalized Light Current vs
Reverse Voltage
Total Capacitance vs
Reverse Voltage
V
R
- Reverse Voltage - V
V
R
- Reverse Voltage - V
T
A
= 25
o
C
= 935 nm
Normalized to V
R
= 5 V
T
A
= 25
o
C
E
e
= 0 mW/cm
2
f = 1 MHz
Normalized Light and Dark
Current vs Ambient Temperature
T
A
- Ambient Temperature -
o
C
V
R
= 5 V
= 935 nm
Normalized to
T
A
= 25
o
C
Dark Current
Light Current
3-55
PDF 
ZIP