Fea tures
.20" (5.08 mm) wide gap
24" minimum, 26 AWG wire leads
Dust protection
.86" (21.8 mm) deep slot
De scrip tion
The OPB817 consists of an infrared
emitting diode and an NPN silicon
phototransistor mounted in an opaque
housing with clear windows for dust
protection. The extended deep slot
allows for a longer reach of the optical
center line from the mounting plane, .90"
(22.86 mm).
Internal apertures are .010" x 0.06" for
the phototransistor "S side" and .050" x
.06" for the LED "E side".
Custom electrical, wire or cabling is
available. Contact your local
representative or Optek for more
information.
Ab so lute Maxi mum Rat ings (T
A
= 25
o
C un less oth er wise noted)
Stor age and Op er ating Tem per a ture Range . . . . . . . . . . . . . . . . . . . . -40
C to +80
C
Input Di ode
For ward DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Peak For ward Cur rent (1
s pulse width, 300 pps) . . . . . . . . . . . . . . . . . . . . . . . . 3.0 A
Re verse DC Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0 V
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
Out put Phototransistor
Col lec tor-Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter-Collector Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V
Col lec tor DC Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW
(1)
NOTES:
(1) De rate lin early 1.67 mW/
C above 25
C.
(2) All pa ram e ters tested us ing pulse tech nique.
(3) Clear dust pro tection.
PRECAUTIONS: Ex po sure of the plas tic body to chlo ri nated hy dro car bons and ke tones such as
thread lock and in stant ad he sive prod ucts will de grade the plas tic body. Cleaning agents
meth a nol and isopropanol are rec om mended. Spray or wipe do not sub merge.
Prod uct Bul le tin OPB817
February 2001
Slotted Op ti cal Switch
Type OPB817
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972) 323- 2200 Fax (972) 323- 2396
29
Visit our website at www.optekinc.com
or email us at sensors@optekinc.com
Type OPB817
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc. 1215 W. Crosby Road Car roll ton, Texas 75006 (972)323- 2200 Fax (972)323- 2396
Elec tri cal Char ac ter is tics (T
A
= 25
o
C un less oth er wise noted)
SYM BOL
PA RAME TER
MIN MAX UNITS
TEST CONDITIONS
In put Di ode
V
F
Forward Voltage
1.8
V
I
F
= 20 mA
I
R
Reverse Current
100
A
V
R
= 2 V
Phototransistor
V
(BR)CEO
Collector-Emitter Breakdown Voltage
30
V
I
C
= 1 mA, I
F
= 0, E
e
= 0
V
(BR)ECO
Emitter-Collector Breakdown Voltage
5.0
V
I
E
= 100
A, I
F
= 0, E
e
= 0
I
CEO
Collector-Emitter Leakage Current
100
nA
V
CE
= 10 V, I
F
= 0, E
e
= 0
Cou pled
I
C(ON)
On-State Collector Current
1.0
10
mA
V
CE
= 5.0, I
F
= 20 mA
V
CE(SAT)
Collector-Emitter Saturation Voltage
0.40
V
I
C
= 100
A, I
F
= 20 mA
30
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