ChipFind - документация

Электронный компонент: OD-880L

Скачать:  PDF   ZIP
750 Mitchell Road, Newbury Park, California 91320
Phone (805) 499-0335 FAX (805) 499-8108
HIGH-POWER GaAlAs IR EMITTERS
OD-880L
.017
.100
.036
.041
45
GLASS
DOME
1.00
MIN.
.024
.043
.143
.150
.015
.209
.220
.183
.186
.152
.156
FEATURES
High reliability liquid-phase epitaxially grown GaAlAs
880nm peak emission for optimum matching with
ODD-45W photodiode
Wide range of linear power output
Hermetically sealed TO-46 package
Medium emission angle for best coverage/power
density
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
Radiant Intensity, I
e
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Reverse Breakdown Voltage, V
R
Capacitance, C
Rise Time
Fall Time
I
F
= 50mA
I
F
= 100mA
I
R
= 10A
V
R
= 0V
5
50
880
80
35
1.55
30
17
0.5
0.5
1.9
mW/sr
nm
nm
Deg
Volts
Volts
pF
sec
sec
ELECTRO-OPTICAL CHARACTERISTICS AT 25C
PARAMETERS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Total Power Output, P
o
I
F
= 100mA
mW
18
20
Power Dissipation
1
Continuous Forward Current
Peak Forward Current (10s, 400Hz)
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
190mW
100mA
3A
5V
240C
ABSOLUTE MAXIMUM RATINGS AT 25C CASE
1Derate per Thermal Derating Curve above 25C
2Derate linearly above 25C
ANODE
(CASE)
CATHODE
1 of 2
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA1
Thermal Resistance, R
THJA2
-55C TO 100C
100C
400C/W Typical
135C/W Typical
THERMAL PARAMETERS
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25C
OPTO DIODE CORP.
DEGRADATION CURVE
FORWARD I-V CHARACTERISTICS
SPECTRAL OUTPUT
RADIATION PATTERN
POWER OUTPUT vs TEMPERATURE
POWER OUTPUT vs FORWARD CURRENT
R
E
L
A
T
I
V
E

P
O
W
E
R

O
U
T
P
U
T

(
%
)
STRESS TIME, (hrs)
10
1
100
R
E
L
A
T
I
V
E

P
O
W
E
R

O
U
T
P
U
T

(
%
)
BEAM ANGLE, (deg)
50
100
F
O
R
W
A
R
D

C
U
R
R
E
N
T
,

I
F

(
a
m
p
s
)
FORWARD VOLTAGE, V
F
(volts)
0
4
R
E
L
A
T
I
V
E

P
O
W
E
R

O
U
T
P
U
T
AMBIENT TEMPERATURE (C)
50
1.5
R
E
L
A
T
I
V
E

P
O
W
E
R

O
U
T
P
U
T

(
%
)
WAVELENGTH, (nm)
750
100
P
O
W
E
R

O
U
T
P
U
T
,

P
o

(
m
W
)
FORWARD CURRENT, I
F
(mA)
10
1,000
80
60
40
20
0
40 30 20 10
0
10
20
30
40
50
90
80
70
60
50
10
2
10
3
10
4
10
5
I
F
= 20mA
I
F
= 50mA
I
F
= 100mA
3
2
1
0
1
2
3
4
5
6
800
850
900
950
1,000
80
60
40
20
0
100
10
1
100
1,000
10,000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
25
0
25
50
75
100
T
CASE
= 25 C
NO PRE BURN-IN PERFORMED
THERMAL DERATING CURVE
DUTY CYCLE, D (%)
0.01
0.1
1
MAXIMUM PEAK PULSE CURRENT
10
100
P
E
A
K

F
O
R
W
A
R
D

C
U
R
R
E
N
T
,

I p
(a
m
p
s
)
0.1
0.01
10
1
AMBIENT TEMPERATURE (C)
25
50
75
100
P
O
W
E
R

D
I
S
S
I
P
A
T
I
O
N

(
m
W
)
180
80
60
40
20
0
200
160
140
120
100
NO
HEAT SINK
INFINITE
HEAT SINK
t = 10s
t = 100s
t = 500s
t
T
Ip
D = tT
2 of 2
1
DC
PULSE
10s, 100Hz
M
A
X
I
M
U
M

R
A
T
I
N
G
S
T
Y
P
I
C
A
L

C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
750 Mitchell Road, Newbury Park, California 91320
Phone (805) 499-0335 FAX (805) 499-8108
HIGH-POWER GaAlAs IR EMITTERS
OD-880L
OPTO DIODE CORP.