BPW 34 B
BPW 34 BS
Silizium-PIN-Fotodiode mit erhhter Blauempfindlichkeit; in SMT
Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT
2002-01-24
1
Wesentliche Merkmale
Speziell geeignet fr Anwendungen im Bereich
von 350 nm bis 1100 nm
Kurze Schaltzeit (typ. 25 ns)
DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
Lichtschranken fr Gleich- und
Wechsellichtbetrieb im sichtbaren Lichtbereich
Industrieelektronik
,,Messen/Steuern/Regeln"
Typ
Type
Bestellnummer
Ordering Code
BPW 34 B
Q62702-P945
BPW 34 BS
Q62702-P1601
Features
Especially suitable for applications from
350 nm to 1100 nm
Short switching time (typ. 25 ns)
DIL plastic package with high packing density
Applications
Photointerrupters
Industrial electronics
For control and drive circuits
2002-01-24
2
BPW 34 B, BPW 34 BS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 85
C
Sperrspannung
Reverse voltage
V
R
32
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotoempfindlichkeit,
V
R
= 5 V
Spectral sensitivity
S
75
nA/Ix
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
850
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
350 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.45
mm
2
Abmessung der bestrahlungsempfindlichen Flche
Dimensions of radiant sensitive area
L
B
L
W
2.73
2.73
mm
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Dark current
I
R
2 (
30)
nA
Spektrale Fotoempfindlichkeit,
= 400 nm
Spectral sensitivity
S
0.2
A/W
Quantenausbeute,
= 400 nm
Quantum yield
0.62
Electrons
Photon
Leerlaufspannung,
E
v
= 1000 Ix
Open-circuit voltage
V
O
390
mV
BPW 34 B, BPW 34 BS
2002-01-24
3
Kurzschlustrom
Short-circuit current
E
e
= 0.5 mW/cm
2
,
= 400 nm
I
SC
7.4 (
5.4)
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
p
= 800
A
t
r,
t
f
25
ns
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.18
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V,
= 400 nm
NEP
1.3
10
13
Nachweisgrenze,
V
R
= 10 V,
= 400 nm
Detection limit
D*
2.1
10
12
Kennwerte (
T
A
= 25
C, Normlicht A,
T
= 2856 K)
Characteristics (
T
A
= 25
C, standard light A,
T
= 2856 K) (cont'd)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm
Hz
W
--------------------------
BPW 34 B, BPW 34 B
2002-01-24
4
Relative Spectral Sensitivity
S
rel
=
f
(
)
Dark Current
I
R
=
f
(
V
R
),
E
= 0
Directional Characteristics
S
rel
=
f
(
)
OHF01001
0
rel
S
400
600
800
1000
1200
20
40
60
80
%
100
nm
0
OHF00080
R
R
V
0
5
10
15
V
20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Photocurrent
I
P
=
f
(
E
v
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
v
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
E
OHF01066
V
0
10
P
-1
10
10
1
10
2
10
4
10
0
10
1
10
2
10
3
4
10
3
10
2
10
1
10
10
0
V
O
A
mV
P
V
O
10
3
lx
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10
V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
P
tot
=
f
(
T
A
)
Dark Current
I
R
=
f
(
T
A
),
V
R
= 5 V,
E
= 0
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10
0
R
10
0
10
1
10
2
10
3
nA
20
40
60
80 C 100
BPW 34 B, BPW 34 BS
2002-01-24
5
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146)
4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 B
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area
Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
0.2 (0.008)
Chip position
0...0.1
BPW 34 BS
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