BPW 34 FA
Si-PIN-Fotodiode mit Tageslichtsperrfilter; in SMT und als Reverse Gullwing
Silicon PIN Photodiode with Daylight Filter; in SMT and as Reverse Gullwing
BPW 34 FAS
BPW 34 FAS (E9087)
2001-06-01
1
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Wesentliche Merkmale
Speziell geeignet fr den Wellenlngenbereich
von 830 nm bis 880 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
BPW 34 FAS/(E9087): geeignet fr
Vapor-Phase Lten und IR-Reflow Lten
Anwendungen
IR-Fernsteuerung von Fernseh- und
Rundfunkgerten, Videorecordern,
Gertefernsteuerung
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
Typ
Type
Bestellnummer
Ordering Code
BPW 34 FA
Q62702-P1129
BPW 34 FAS
Q62702-P463
BPW 34 FAS (E9087)
Q62702-P1829
Features
Especially suitable for the wavelength range of
830 nm to 880 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
BPW 34 FAS/(E9087): Suitable for
vapor-phase and IR-reflow soldering
Applications
IR-remote control of hi-fi and TV sets, video
tape recorders, remote controls of various
equipment
Photointerrupters
2001-06-01
2
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40 ... + 100
C
Sperrspannung
Reverse voltage
V
R
V
R
(
t
< 2 min)
16
32
V
V
Verlustleistung,
T
A
= 25
C
Total power dissipation
P
tot
150
mW
Kennwerte (
T
A
= 25
C,
= 870 nm)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Fotostrom
Photocurrent
V
R
= 5 V,
E
e
= 1 mW/cm
2
I
p
50 (
40)
A
Wellenlnge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
S max
880
nm
Spektraler Bereich der Fotoempfindlichkeit
S
= 10% von
S
max
Spectral range of sensitivity
S
= 10% of
S
max
730 ... 1100
nm
Bestrahlungsempfindliche Flche
Radiant sensitive area
A
7.00
mm
2
Abmessung der bestrahlungsempfindlichen
Flche
Dimensions of radiant sensitive area
L
B
L
W
2.65
2.65
mm
mm
Halbwinkel
Half angle
60
Grad
deg.
Dunkelstrom,
V
R
= 10 V
Dark current
I
R
2
(
30)
nA
Spektrale Fotoempfindlichkeit
Spectral sensitivity
S
0.65
A/W
Quantenausbeute
Quantum yield
0.93
Electrons
Photon
Leerlaufspannung,
E
e
= 0.5 mW/cm
2
Open-circuit voltage
V
O
320 (
250)
mV
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
2001-06-01
3
Kurzschlustrom,
E
e
= 0.5 mW/cm
2
Short-circuit current
I
SC
23
A
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L
= 50
;
V
R
= 5 V;
= 850 nm;
I
p
= 800
A
t
r
,
t
f
20
ns
Durchlaspannung,
I
F
= 100 mA,
E
= 0
Forward voltage
V
F
1.3
V
Kapazitt,
V
R
= 0 V,
f
= 1 MHz,
E
= 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.03
%/K
Rauschquivalente Strahlungsleistung
Noise equivalent power
V
R
= 10 V
NEP
3.9
10
14
Nachweisgrenze,
V
R
= 10 V,
Detection limit
D*
6.8
10
12
Kennwerte (
T
A
= 25
C,
= 870 nm)
Characteristics (cont'd)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm
Hz
W
--------------------------
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
2001-06-01
4
Relative Spectral Sensitivity
S
rel
=
f
(
)
Dark Current
I
R
=
f
(
V
R
),
E
= 0
Directional Characteristics
S
rel
=
f
(
)
OHF01430
400
rel
S
0
600
800
1000 nm 1200
10
20
30
40
50
60
70
80
%
100
0
OHF00080
R
R
V
0
5
10
15
V
20
1000
2000
3000
4000
pA
OHF01402
90
80
70
60
50
40
30
20
10
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.2
0.4
0.6
0.8
1.0
100
0
0
0
Photocurrent
I
P
=
f
(
E
e
),
V
R
= 5 V
Open-Circuit Voltage
V
O
=
f
(
E
e
)
Capacitance
C
=
f
(
V
R
),
f
= 1 MHz,
E
= 0
E
OHF01428
e
0
10
P
-1
10
10
1
10
2
10
4
10
0
10
1
10
2
10
3
4
10
3
10
2
10
1
10
10
0
V
O
A
mV
P
V
O
2
W/cm
V
OHF00081
R
-2
10
C
0
-1
10
0
10
1
10
2
10
V
10
20
30
40
50
60
70
80
pF
100
Total Power Dissipation
P
tot
=
f
(
T
A
)
Dark Current
I
R
=
f
(
T
A
),
V
R
= 10 V,
E
= 0
T
OHF00958
A
0
tot
P
0
20
40
60
80 C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10
0
R
10
0
10
1
10
2
10
3
nA
20
40
60
80 C 100
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
2001-06-01
5
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
GEOY6643
4.0 (0.157)
3.7 (0.146)
4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5
5.08 (0.200)
spacing
1.4 (0.055)
Photosensitive area
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
BPW 34 FA
BPW 34 FAS
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area
Cathode lead
GEOY6863
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
0.2 (0.008)
Chip position
0...0.1
2001-06-01
6
BPW 34 FA, BPW 34 FAS, BPW 34 FAS (E9087)
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
BPW 34 FAS (E9087)
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area
Cathode lead
GEOY6916
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
(0...0.004)
0...5
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.65 (0.104) x 2.65 (0.104)
1.8 (0.071)
0.2 (0.008)
0...0.1
Chip position
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