F 1047A
F 1047B
GaAlAs-Infrarot-Lumineszenzdiode (880 nm)
GaAlAs Infrared Emitting Diode (880 nm)
Vorlufige Daten / Preliminary Data
2003-04-11
1
Wesentliche Merkmale
Typ. Gesamtleistung: 22 mW @ 100 mA im
TOPLED
Gehuse
Chipgre 300 x 300
m
2
GaAlAs-LED mit sehr hohem Wirkungsgrad
Hohe Zuverlssigkeit
Hohe Impulsbelastbarkeit
Gute spektrale Anpassung an
Si-Fotoempfnger
Vorderseitenmetallisierung: Aluminium
Rckseitenmetallisierung: Goldlegierung
Lieferung: vereinzelt auf Folie
Anwendungen
I
IR-Fernsteuerung von Fernseh-, Rundfunk-
und Videogerten, Lichtdimmern
Gertefernsteuerungen fr Gleich- und
Wechsellichtbetrieb
Lichtschranken bis 500 kHz
Sensorik
Diskrete Optokoppler
Typ
Type
Bestellnummer
Ordering Code
Beschreibung
Description
F 1047A
Q67220-C1386
Infrarot emittierender Chip, Oberseite Kathodenanschluss
Infrared emitting die, top side cathode connection
F 1047B
on request
Infrarot emittierender Chip, Oberseite Kathodenanschluss,
Oberflche aufgerauht.
Infrared emitting die, top side cathode connection, surface
frosted
Features
Typ. total radiant power: 22 mW @ 100 mA in
TOPLED
package.
Chipsize: 300 x 300 m
Very highly efficient GaAlAs LED
High reliability
High pulse handling capability
Good spectral match to silicon photodetectors
Frontside metallization: aluminum
Backside metallization: gold alloy
Delivery: diced on foil
Applications
IR remote control for hifi and TV sets, video
tape recorder, dimmers
Remote control for steady and varying
intensity
Light-reflection switches (max. 500 kHz)
Sensor technology
Discrete optocouplers
2003-04-11
2
F 1047A, F 1047B
Elektrische Werte (
T
A
= 25
C)
Electrical values
1)
(
T
A
= 25
C)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
2)
Einheit
Unit
min.
typ.
max.
Emissionswellenlnge
Peak wavelength
I
F
= 10 mA
peak
880
nm
Spektrale Bandbreite bei 50% von
I
max,
Spectral bandwidth at 50% of
I
max
I
F
= 10 mA
100
nm
Schaltzeiten,
I
e
von 10% auf 90% und von 90% auf
10%, bei
I
F
= 100 mA,
R
L
= 50
Switching times,
I
e
from 10% to 90% and from 90%
to 10%,
I
F
= 100 mA,
R
L
= 50
t
r
,
t
f
0.5/0.4
s
Sperrspannung
Reverse voltage
I
R
= 1
A
V
R
5
V
Durchla
spannung
Forward voltage
I
F
= 100 mA
V
F
1.9
V
Strahlungsleistung
Radiant Power
3)
I
F
= 100 mA
F1047A
F1047B
e
12
14
mW
mW
Photostrom (Spezifikationsparameter)
Photocurrent (specified parameter)
I
F
= 100 mA
F1047A
F1047B
I
e
0.50
0.65
a.u.
a.u.
1)
Measurement limits describe actual settings and do not include measurement uncertainties. Each wafer and each
fragment of a wafer is subject to final testing. The wafer or its pieces are individually attached on foils (ring). Sample
chips are picked from each foil and placed on a special carrier for measurement purposes. The sampling density is one
chip per 1cm. If a sample fails, the area around that sample is tested again by taking samples in fourfold density. If a
sample fails in that measurement, an area of 0,25 cm around each failed sample is marked by pen.
All el. values are referenced to the vendor's measurement system (correlation to customer product(s) is required)
2)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
3)
Radiant power is measured on TO-18 header in integrating sphere.
F 1047A, F 1047B
2003-04-11
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlnge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.28
0.30
0.32
mm
Chipkantenlnge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.28
0.30
0.32
mm
Durchmesser des Wafers
Diameter of the wafer
D
48
mm
Chiphhe
Die height
H
210
m
Bondpaddurchmesser
Diameter of bondpad
d
130
m
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rckseitenmetallisierung
Metallization backside
Goldlegierung
Au-Alloy
Trennverfahren
Dicing
Sgen
Sawing
Verbindung Chip - Trger
Die bonding
Kleben
Glueing
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:The visual inspection shall be made in accordance to the "specification of the visual
inspection" as referenced.The visual inspection of chip backside is performed by eye for 100% of the area of each
wafer. If decisions (good/bad) are not possible additional a stereo microscope with incident light with 40x-80x
magnification is used. Areas > cm which have an amount of more than 5% failed dies will be marked manually with
pen.The visual inspection of chip frontside is performed by a stereo microscope with incident light with 40x-80x
magnification for 100% of the area of each wafer.Areas greater than 5x5 mm and with a failure density higher than
25% are marked by pen and inked around. Areas with failure density higher than 10% each failure die is inked
individually.The inked area from backside must be transfered to frontside and has to be marked manually with pen and
inked around.The quality inspection (final visual inspection) is performed by production. An additional visual
inspection step as special release procedure by QM after the final visual inspection is not installed.
F 1047A, F 1047B
2003-04-11
4
fj
Grenzwert
1)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum Operating temperature range
T
op
-40...+100
C
Maximaler Lagertemperaturbereich
Maximum storage temperature range
T
stg
-40...+100
C
Maximaler Durchlastrom
Maximum forward current
I
F
100
mA
Maximaler Stostrom
Maximum surge current
t
p
= 10 s, D = 0.005
I
S
2.5
A
Maximale Sperrschichttemperatur
Maximum junction temperature
T
j
125
C
1)
Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in a TO-18 package.
F 1047A, F 1047B
2003-04-11
5
Relative Spectral Emission
1)
I
Frel
= f (
)
T
A
= 25 C
Forward Current
1)
I
F
= f (V
F
), Single pulse, t
p
= 20 ms, T
A
= 25 C
1)
Based on typ.(see page 2, footnote 2 for explanation)
data measured in OSRAM Opto Semiconductor's
TOPLED package.
Radiant Intensity
1)
I
e
/I
e
(100mA) = f (I
F
)
T
A
= 25 C, single pulse: t
p
= 20 s
Permissible Pulse Power
1)
Duty cycle D = parameter, T
A
= 25
C
0
750
rel
OHR00877
800
850
900
950 nm 1000
20
40
60
80
%
100
10
OHR00881
F
V
-3
-2
10
-1
10
0
10
1
10
0
1
2
3
4
5
6
V
8
A
F
10
OHR00878
e
F
-3
-2
10
-1
10
0
10
1
10
2
10
0
10
10
1
10
2
10
4
mA
e
(100mA)
3
10
10
F
OHR00886
1
2
10
3
10
4
10
mA
-5
10
s
=
D
F
T
DC
0.005
=
D
p
t
T
t
p
p
t
0.5
0.2
0.1
0.01
0.02
0.05
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
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